Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| Table 2062 shows the summary of 2003 Roadmap, listing the node, gate length, equivalent oxide thickness of high power (CPU) and low standby power devices (mobile), gate oxide material, and gate electrode material. Table 2062. Summary of 2003 Roadmap.
Figure 2062 shows the scaling of feature size, gate length and oxide thickness of complementary metal oxide semiconductor (CMOS) field effect transistor (FET) made from silicon according to the 2003 International Technology Roadmap for Semiconductors.
Figure 2062. Scaling of feature size, gate length and oxide thickness of CMOS-FET according to the 2003 International Technology Roadmap for Semiconductors.
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