Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Conduction- & Valence-band Offsets
| An important parameter for the design of electronic, heterojunction, quantum-well, and optoelectronic devices is the band offsets. Table 2072 lists the conduction- (ΔEc) and valence- (ΔEv) band offsets (eV) in some heterojunction and other systems.
Table 2072. Conduction- (ΔEc) and valence- (ΔEv) band offsets (eV) in some heterojunction and other systems.
Heterojunction systems |
ΔEc (eV) |
ΔEv (eV) |
GaAs/AlxGa1-xAs
|
|
0.46x |
GaAs/AlAs
|
|
0.31 |
GaAs/InAs
|
|
0.35 |
AlAs/Al0.37Ga0.63As
|
|
0.34 |
Ga0.5In0.5P/GaAs |
|
0.32 |
AlN/InN |
|
1.32 ± 0.14 |
GaSb/InAs |
|
0.51 |
Al0.48In0.52As/Ga0.47In0.53As |
0.52 |
0.75 |
InN/GaN |
|
1.051 |
InN/AlN |
|
1.81 ± 0.2 |
In1-xGaxAsyP1-y/InP |
= 0.268•y + 0.003•y2 |
= 0.502·y - 0.152·y2 |
AlN/GaN |
|
0.57 ± 0.22 |
GaN/AlN |
|
0.7 ± 0.24 |
AlAs/InAs |
|
0.35 |
InP/Ga0.47In0.53As |
0.22 |
0.32 |
GaAs/AlSb |
|
0.40 |
GaSb/InAs0.95Sb0.05 |
|
0.67 |
CdTe/HgTe |
|
0.34 |
CdTe/ZnTe |
|
0.40 |
ZnTe/HgTe |
|
0.30 |
Si/Al2O3 |
2.8 |
4.9 |
Si/SiO2 |
3.3 |
4.4 |
Si/Ta2O5 |
0.3 |
3.0 |
Si/SrTiO3 |
<0.1 |
|
Si/ZrO2 |
1.7 |
3.3 |
Si/HfO2 |
1.6 |
|
| Si/Si3N4
|
2.4 |
1.8 |
Si/BaTiO3
|
-0.1 |
2.3 |
Si/BaZrO3 |
0.8 |
3.4 |
Si/Y2O3 |
2.3 |
2.6 |
Si/La2O3 |
2.3 |
2.6 |
Si/ZrSiO4
|
1.5 |
3.4 |
Si/HfSiO4 |
1.5 |
3.4 |
LaAlO3 |
2.1 |
1.9 |
|
