InN
- Practical Electron Microscopy and Database -
- An Online Book -

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Figure 2086 shows bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices).

Figure 2086. Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices). Adapted from [1]

Table 2086a shows the lattice properties of InN.

Table 2086a. The lattice properties of InN.
Crystalline properties Parameter   Crystalline properties Parameter
Lattice parameter (Å)
(wurtzite structure)
a = 3.5446   Bond Length (Å) 2.15
c = 5.7034   Thermal expansion coefficient (x10-6C-1) a = 5.7
c/a = 1.609   c = 3.7
Lattice parameter (Å)
(zincblende structure)
a = 4.98   Density (g/cm3) 6.99
Energy gap (eV) at 300K (for wurtzite W, & zincblende Z lattices) W = 1.89 D   Cohesive energy per bond (Ecoh, eV) 1.93
Z = 2.2 D   Melting entropy (cal mol-1K-1) 14.1
Melting temperature (TM, K) 2146

Vapor pressure at TM (bar) >105

Table 2086b shows the lattice mismatch (%) between the substrates and epitaxial layers, and the resulting misfit dislocation separation (in Å) corresponding to complete misfit relaxation for the basal plane interfaces.

Table 2086b. The lattice mismatch (%) between the substrate and epitaxial layers, and the resulting misfit dislocation separation (in Å).

Crystalline Properties
6H-SiC
α-A1203
InN
AlN
GaN
Lattice mismatch with
Sapphire
11.5%
--
25.4%
12.5%
14.8%
SiC
--
-11.5%
14.0%
1.0%
3.3%
GaN
-3.3%
-14.8%
10.6%
-2.4%
--
Dislocation distance on
Sapphire
21.9
--
10.6
20.3
17.2
SiC
--
21.9
20.4
276.7
80.9
GaN
80.9
17.2
27.3
114.4
--

Table 2086c. Magnitudes of Burgers vectors of dislocations in nitride semiconductors (in Å).

Burgers vectors
InN
AlN
GaN
a = 1/3 <1-210>
3.545
3.111
3.186
c = [0001]
5.703
4.979
5.178
c + a = 1/3 <11-23>
6.715
5.871
6.080

[1] Ponce, F. A. and Bour, D.P., Nature, 386, (1997) 351.

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