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Figure 2086 shows bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices).
Figure 2086. Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices). Adapted from [1]
Table 2086a shows the lattice properties of InN.
Table 2086a. The lattice properties of InN.
Crystalline properties |
Parameter |
|
Crystalline properties |
Parameter |
Lattice parameter (Å)
(wurtzite structure) |
a = 3.5446 |
|
Bond Length (Å) |
2.15 |
c = 5.7034 |
|
Thermal expansion coefficient (x10-6C-1) |
a = 5.7 |
c/a = 1.609 |
|
c = 3.7 |
Lattice parameter (Å)
(zincblende structure) |
a = 4.98 |
|
Density (g/cm3) |
6.99 |
Energy gap (eV) at 300K (for wurtzite W, & zincblende Z lattices) |
W = 1.89 D |
|
Cohesive energy per bond (Ecoh, eV) |
1.93 |
Z = 2.2 D |
|
Melting entropy (cal mol-1K-1) |
14.1 |
Melting temperature (TM, K) |
2146
|
|
|
|
Vapor pressure at TM (bar) |
>105 |
|
|
|
Table 2086b shows the lattice mismatch (%) between the substrates and epitaxial layers, and the resulting misfit dislocation separation (in Å) corresponding to complete misfit relaxation for the basal plane interfaces.
Table 2086b. The lattice mismatch (%) between the substrate and epitaxial layers, and the resulting misfit dislocation separation (in Å).
Crystalline Properties |
|
6H-SiC |
α-A1203 |
InN |
AlN |
GaN |
Lattice mismatch with |
Sapphire |
11.5% |
-- |
25.4% |
12.5% |
14.8% |
SiC
|
-- |
-11.5% |
14.0%
|
1.0%
|
3.3% |
GaN |
-3.3% |
-14.8% |
10.6% |
-2.4% |
-- |
Dislocation distance on |
Sapphire |
21.9 |
-- |
10.6 |
20.3 |
17.2 |
SiC |
-- |
21.9 |
20.4 |
276.7 |
80.9 |
GaN |
80.9 |
17.2 |
27.3 |
114.4 |
-- |
Table 2086c. Magnitudes of Burgers vectors of dislocations in nitride semiconductors (in Å).
Burgers vectors |
InN |
AlN |
GaN |
a = 1/3 <1-210>
|
3.545
|
3.111
|
3.186 |
c = [0001]
|
5.703
|
4.979 |
5.178 |
c + a = 1/3 <11-23>
|
6.715
|
5.871
|
6.080 |
[1] Ponce, F. A. and Bour, D.P., Nature, 386, (1997) 351.
|