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Figure 2383 shows the polarization and piezoelectric displacement measurements of MIM (metal-insulator-metal) capacitor samples with ferroelectric and antiferroelectric Si-doped HfO2 insulators.
Figure 2383. Polarization (top row) and piezoelectric displacement (bottom row) measurements of MIM (metal-insulator-metal) capacitor samples with ferroelectric (left column) and antiferroelectric (right column) Si-doped HfO2 insulators. [1]
Table 2383. Examples of antiferroelectric materials and their properties.
Materials |
PbZrO3 (Lead zirconate) |
NaNbO3 (Sodium niobate) |
NH4H2PO4 |
Curie temperature
(Tc, °C) |
+233 |
+63 |
-125 |
[1] TS Böscke, J Müller, D Bräuhaus, U Schröder, U Böttger, Ferroelectricity in hafnium oxide thin films, Applied Physics Letters, 99, 102903-102903-3, 2011.
|