Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| Figure 2383 shows the polarization and piezoelectric displacement measurements of MIM (metal-insulator-metal) capacitor samples with ferroelectric and antiferroelectric Si-doped HfO2 insulators.
Figure 2383. Polarization (top row) and piezoelectric displacement (bottom row) measurements of MIM (metal-insulator-metal) capacitor samples with ferroelectric (left column) and antiferroelectric (right column) Si-doped HfO2 insulators. [1] Table 2383. Examples of antiferroelectric materials and their properties.
[1] TS Böscke, J Müller, D Bräuhaus, U Schröder, U Böttger, Ferroelectricity in hafnium oxide thin films, Applied Physics Letters, 99, 102903-102903-3, 2011.
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