Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Chemical Vapor Deposition (CVD)
| Table 2387. Comparison of different CVD techniques applied in microfabrication processes.
|
APCVD |
PECVD |
LTLPCVD |
MTLPCVD |
ALCVD |
UHVCVD |
DLICVD |
AACVD |
Process temperature (°C) |
300-500 |
100-350
|
300-500
|
500-900 |
|
|
|
|
Process pressure |
Atmospheric pressure |
|
Sub-atmospheric pressures |
|
Very low pressure (<10−6 Pa) |
|
|
Precursors |
|
|
|
|
|
|
In liquid form |
Transported to the substrate by means of a liquid/gas aerosol |
Fabricated materials |
SiO2, P-glass |
SiN, SiO2, SiON
|
SiO2, P-glass, BP-glass
|
Poly-Si, SiO2, P-glass, BP-glass, Si3N4, SiON |
|
|
|
|
Applications |
Passivation, insulation, spacer |
Passivation, insulation |
Passivation, insulation, spacer
|
Passivation, gate metal, spacer |
Successive layers with different substances |
|
|
|
Throughput |
High |
Low |
High |
High |
|
|
High growth rates |
|
Step coverage |
Poor |
Poor |
Poor |
Conformal |
|
|
|
|
Particles |
Many |
Many |
Few |
Few |
|
|
|
|
Unwanted gas-phase reactions |
|
|
Reduce unwanted gas-phase reactions |
|
|
|
|
Film uniformity across wafer |
|
|
Better |
|
|
|
|
Film properties |
Good |
Poor |
Good |
Excellent |
|
|
|
|
*Note: APCVD: atmospheric CVD; PECVD: plasma enhanced (assisted) CVD; LTLPCVD: low-temperature low-pressure CVD; MTLPCVD: medium temperature low pressure CVD; UHVCVD: ultrahigh vacuum CVD; AACVD: aerosol assisted CVD; DLICVD: direct liquid injection CVD; MPCVD: microwave plasma-assisted CVD; ALCVD: atomic-layer CVD.
|
