This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Due to geometrical scaling of semiconducting integrated circuits such as DRAM and NAND flash, the quality of TEM analysis increasingly relies on specimen preparation in order to accurately monitor the fabrication process, to analyze the defects, and to investigate the morphology of interface layer. In other words, the sample preparation is a critical step and determines the quality of structural characterization and chemical analysis of the smallest and most critical structures. With advanced semiconductor processes at ~30 nm and below, it is essential that the specimens are less than 20 nm in thickness, for instance, in order to avoid overlap among scaled structures.