Stress Distribution around Silicides
- Practical Electron Microscopy and Database -
- An Online Book -

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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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The volume reduction due to silicidation in ICs causes tensile stress in the silicide, resulting in compressive stress in the adjacent crystals (e.g. silicon substrate under the silicide). [1]

 

 

 

[1] S. P. Murarka, Silicides for VLSI Applications (Academic, New York, 1983), p. 52.

 

 

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