Stress Distribution around Silicides
- Practical Electron Microscopy and Database -
- An Online Book -  

This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


The volume reduction due to silicidation in ICs causes tensile stress in the silicide, resulting in compressive stress in the adjacent crystals (e.g. silicon substrate under the silicide). [1]




[1] S. P. Murarka, Silicides for VLSI Applications (Academic, New York, 1983), p. 52.




The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.