Dangling-bonds in Grain Boundaries
- Practical Electron Microscopy and Database -
- An Online Book -


This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


In band gap of polycrystalline silicon, the electrical activity of grain boundary depends on the atomic structure of grain boundary since the dangling-bonds or extra bonds generates deep-level states in the band gap. [1, 2]






[1] W. B. Jackson, N. M. Johnson and D. K. Biegelsen: Appl. Phys. Lett. 43 (1983) 195 - 197.
[2] D. Jousse, S. L. Delage and S. S. Iyer: Phil. Mag. B 63 (1991) 443 - 455.




The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.