This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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In many cases, IR-OBIRCH provides misleading signals on localization of defects, for instance, in circuits consisting of transistors. In these cases, the abnormal resistance change does not represent the defective location. For instance, the green spot in Figure 2847 (a) presented an artificial signal, where there is no defect actually. This abnormal current path (again, where there is no defect) is from V_pwr to M462’s gate in other circuit. M462 has been turned on by the voltage drop from V_pwr to its gate. The green spot on M462 in Figure 2847 (a) has only pointed to an abnormal high voltage on drain node of M462. Figures 2847 (b) and (c) show the real defect was localized on Q178, where a base to collector short has been confirmed by physical analysis.

Figure 2847. (a) and (b) Failing IV character and the IR-OBIRCH result, and (b) Schematic of related circuit and optical inspection. Adapted from [1]

[1] Jinglong Li; Gaojie Wen; Joe Yu; G. Song, Die-level leakage current path analysis based on IR-OBIRCH technology, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (July 2012), pg. 1-4.