This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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In semiconductor industry, electron beam (EB) observation in scanning electron microscopy (SEM) is important to detect the hidden defects causing electrical failure such as contact failure, under-layer electric short, and leakages using voltage contrast [1-4].

[1] M. Nozoe, H. Nishiyama, H. Shinada, and M. Tanaka, “New Voltage Contrast Imaging Method for Detection of Electrical Failures,” Proceedings of SPIE, Vol.3998, pp.599-606, 2000.
[2] M. Matsui, C. Zhaohui, M. Nozoe, and K. Torii, “Detecting Defects in Cu Metallization Structures by Electron-Beam Wafer Inspection,” Journal of The Electrochemical Society, Vol.151, pp.G440-G442, 2004.
[3] I. De, K. Shadman, and G. Zapalac, “Investigation of Detection Limits of Resistive Contact Plugs in Electron Beam Inspection Using Modeling and Simulation,” IEEE Transactions on semiconductor manufacturing, Vol.20, pp.0894-6507, 2007.
[4] K. Shadman and I. De, “Analytic models for the kinetics of generating a voltage contrast signal from contact plugs used in integrated circuits,” J. App.Phys., Vol.101, pp.064913, 2007.