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Table 2901. Performance of barriers for copper interconnections.
Sample |
Barrier Stability |
Deposition condition |
Reference |
|
Si/TiW (100 nm)/Cu |
725 °C, 30 sec |
In-situ Cu on TiW |
[1] |
|
Si/TiW (100 nm)/Cu |
775 °C, 30 sec |
Air between Cu and TiW |
[1] |
|
Si/TiNx (50 nm)/Cu |
600 °C, 1 h |
Sputtering |
[2] |
|
Si/TiN (50 nm)/Cu |
550 °C, 1 h |
CVD |
[3] |
|
Si/TiN (50 nm)/Cu |
650 °C, 1 h |
Plasma treated CVD |
[3] |
|
Si/Ta (60 nm)/Cu |
600 °C, 1 h |
Sputtering |
[4] |
|
Si/Ta (50 nm)/Cu |
550 °C, 30 min |
Sputtering |
[5] |
|
Si/Ta2N (50 nm)/Cu |
> 650 °C, 30 min |
Sputtering |
[5] |
|
Si/TaN (100 nm)/Cu |
750 °C, 1 h |
Sputtering |
[6] |
|
Si/TiSi2 (30 nm)/
Ta–Si–N (80 nm) /Cu |
900 °C, 30 min |
Sputtering |
[7] |
|
Si/W (25 nm)/Cu |
650 °C, 30 min |
Sputtering |
[8] |
|
Si/W2N (25 nm)/Cu |
790 °C, 30 min |
Sputtering |
[8] |
|
Si/WN (25 nm)/Cu |
500 °C, 30 min |
Sputtering |
[8] |
|
Si/WNx (20 nm)/Cu |
> 550 °C, 30 min |
PECVD |
[9] |
|
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|