Barriers for Copper Interconnections
- Practical Electron Microscopy and Database -
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Table 2901. Performance of barriers for copper interconnections.

Sample Barrier Stability Deposition condition Reference  
Si/TiW (100 nm)/Cu 725 °C, 30 sec In-situ Cu on TiW
[1]
 
Si/TiW (100 nm)/Cu 775 °C, 30 sec Air between Cu and TiW
[1]
 
Si/TiNx (50 nm)/Cu 600 °C, 1 h Sputtering
[2]
 
Si/TiN (50 nm)/Cu 550 °C, 1 h CVD
[3]
 
Si/TiN (50 nm)/Cu 650 °C, 1 h Plasma treated CVD
[3]
 
Si/Ta (60 nm)/Cu 600 °C, 1 h Sputtering
[4]
 
Si/Ta (50 nm)/Cu 550 °C, 30 min Sputtering
[5]
 
Si/Ta2N (50 nm)/Cu > 650 °C, 30 min Sputtering
[5]
 
Si/TaN (100 nm)/Cu 750 °C, 1 h Sputtering
[6]
 
Si/TiSi2 (30 nm)/
Ta–Si–N (80 nm) /Cu
900 °C, 30 min Sputtering
[7]
 
Si/W (25 nm)/Cu 650 °C, 30 min Sputtering
[8]
 
Si/W2N (25 nm)/Cu 790 °C, 30 min Sputtering
[8]
 
Si/WN (25 nm)/Cu 500 °C, 30 min Sputtering
[8]
 
Si/WNx (20 nm)/Cu > 550 °C, 30 min PECVD
[9]
 

 

 

 

[1] S.-Q. Wang, S. Suthar, C. Hoeflich, and B. J. Burrow, J. of Appl. Phys. 73 (5), 2301–2321 (1993).
[2] J. O. Olowolafe, J. Li, J. W. Mayer, and E. G. Colgan, Appl. Phys. Lett. 58 (5), 469–471 (1991).
[3] D.-H. Kim, S.-L. Cho, K.-B. Kim, J. J. Kim, J. W. Park, and J. J. Kim, Appl. Phys. Lett. 69 (27), 4182–4184 (1996).
[4] H. Ono, T. Nakano, and T. Ohta, Appl. Phys. Lett. 64 (12), 1511–1513 (1994).
[5] K. Holloway, P. M. Fryer, C. Cabral, Jr., J. M. E. Harper, P. J. Bailey, and K. H. Kelleher, J. Appl. Phys. 71 (11), 5433–5443 (1992).
[6] M. Takeyama, A. Noya, T. Sase, A. Ohta, and K. Sasaki, J. of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 14 (2), 674–678 (1996).
[7] E. Kolawa, J. S. Chen, J. S. Reid, P. J. Pokela, and M.-A. Nicolet, J. of Appl. Phys. 70 (3), 1369–1373 (1991).
[8] T. Oku, M. uekubo, E. Kawakami, K. Nii, T. Nakano, T. Ohta, and M. Murakami, in 1995 IEEE VMIC Conf., pp. 182–185.
[9] J. P. Lu, Q. Z. Hong, W. Y. Hsu, G. A. Dixit, V. Cordasco, S. W. Russell, J. D. Lutttner, R. H. Havemann, L. K. Magel, and H. L. Tsai, in Advanced Metallization and Interconnect Systems for ULSI Applications (Oct. 1997).

 

 

 

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