Non-Ohmic Contact Failure in ICs
- Practical Electron Microscopy and Database -
- An Online Book -
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For memory ICs (integrated circuits), electrical opens can be caused by dangling contacts of bitlines and PMOS [1,2] and are normally on the order of a tenth of a micron or larger.
 Z.G. Song, G. Qian, J.Y. Dai, Z.R. Guo, S.K. Loh, C.S.
Teh, S. Redkar, Application of contact-level ion-beam
induced passive voltage contrast in failure analysis of static
random access memory, in: Proceedings of the Eighth
International Symposium on the Physical and Failure
Analysis of Integrated Circuits, IPFA, Singapore, 2001, p.
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