Electron microscopy
Problems in Poly-Si Gate in ICs
- Practical Electron Microscopy and Database -
- An Online Book -
Microanalysis | EM Book                                                                                   https://www.globalsino.com/EM/        

This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


Up-shift of threshold voltage in MOS structure can occur due to local depletion in the poly-Si gate [1].






[1] Shuji Ikeda, Yasuko Yoshida, Koichiro Ishibashi, Yasuhiro Mitsui, IEEE Trans. Electron. Dev. 50 (5) (2003) 1270–1276.



The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.