Temperature Increase/Heat Generation in TEM Sample
Preparation by FIB
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.



When an ion beam impinges on a surface in FIB (focused ion beam) milling or deposition, it transfers its kinetic energy mostly by the way of electronic excitations and collisions, which eventually gets converted to the form of heat, resulting in rise of the local temperature. The local temperature rise (Θ) in Si, GaAs, and SiO2 bulks in focused-ion-beam (FIB) sample preparation at a beam energy of 30 keV had been calculated [1] based on the model for laser beam heating proposed by Nissim et al. The FIB-heated region was in a hemispheric shape. Θmax of less than 100 K were predicted for the three materials. In their modeling, I/d is 20 nA/μm at maximum. Here, I was beam density and d is the beam diameter. Θmax for SiO2 sample is larger by about 100 times than that for Si sample because of its low thermal conductivity and diflusivity of heat.


[1] Tohru Ishitani and Hiroyasu Kaga, Calculation of Local Temperature Rise in Focused-Ion-Beam Sample Preparation, J Electron Microsc (Tokyo) (1995) 44 (5): 331-336.



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