Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| Since the early 1990s, researchers have improved low-voltage scanning electron microscopy (LVSEM) [1 - 5]. Their contributions have been mainly on LVSEM instrumentation [6], lateral resolution [7 - 9], and its application in the life sciences [10]. All studies have underlined the advantage of LVSEM over conventional scanning electron microscopy (SEM) in terms of increased surface sensitivity, minimization of charging, and radiation damage effects. On the other hand, the probe diameter, which determines the spatial resolution of SEM, is dominated by chromatic aberration in the low-voltage regime [11]. It is interesting to mention that both LVSEM and CCVC pattern of e-beam testing work in the medium accelerating voltage region with weak positive charging to avoid strong negative charging at high accelerating voltages.
[1] Pawley, J.B. (1992) LVSEM for high resolution topographic and density
contrast imaging. Adv. Electron. Electron. Phys. 83, 203–274.
|