Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| Dissociation is often found at grain boundaries in materials with low stacking fault energies such Ag, Au, Ni, Si, and Cu, when a single planar interface is ‘‘wetted’’ by a solid layer with a different orientation and sometimes with a different structure. For example, certain grain boundaries are found to form a thin layer with the 9R structure in face centered cubic (fcc) Au (gold) [1] or even the body centered cubic (bcc) structure in fcc Cu (copper) [2].
[1] D. L. Medlin, S. M. Foiles, and D. A. Cohen, Acta Mater.
49, 3689 (2001).
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