Dissociation of Defects in Crystals
- Practical Electron Microscopy and Database -
- An Online Book -



This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.



Dissociation is often found at grain boundaries in materials with low stacking fault energies such Ag, Au, Ni, Si, and Cu, when a single planar interface is ‘‘wetted’’ by a solid layer with a different orientation and sometimes with a different structure. For example, certain grain boundaries are found to form a thin layer with the 9R structure in face centered cubic (fcc) Au (gold) [1] or even the body centered cubic (bcc) structure in fcc Cu (copper) [2].


[1] D. L. Medlin, S. M. Foiles, and D. A. Cohen, Acta Mater. 49, 3689 (2001).
[2] C. Schmidt, F. Ernst, M.W. Finnis, and V. Vitek, Phys. Rev. Lett. 75, 2160 (1995).



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