Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| The power semiconductor market is growing rapidly due to increased demand for energy-efficient devices and the rise of renewable energy, electric vehicles, and smart grid systems. Valued at $34.9 billion USD in 2020, it’s expected to reach $44.2 billion USD by 2025, with a 4.8% CAGR (Compound Annual Growth Rate). Silicon carbide (SiC) is a key technology driving this growth, offering superior electric field strength, thermal conductivity, and faster switching speeds compared to silicon. SiC-based devices like MOSFETs and Schottky diodes are gaining traction in EVs, renewables, and high-voltage power transmission. Figure 0505 shows the major application areas of power devices plotted as a function of rated voltage.
[1] T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications. Singapore: Wiley, Nov. 2014.
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