Electron Channeling/Diffraction in EELS Measurements
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Theoretical study of EELS mostly considers both the incident and scattered electron waves are plane waves. However if the incident electron experiences strong channeling, then it is not necessary that the incident electron is a plane wave but may be approximately the same size as the outer atomic orbitals. [1]

Based on the theory of electron inelastic differential cross section, using an incident 100 keV electron wave, Kirkland obainted the relationship between EELS partial L2,3 cross section and energy loss (in eV) for single atom Si (silicon) produced by electron channeling through a [100] Si specimen at different depths, indicating the variation of EELS intensity (see Figure 2801).

Electron Channeling in EELS Measurements

Figure 2801. EELS channeling effect at depths of (a) 10 Å, (b) 100 Å, and (c) 200 Å. The detector collection angle was 20 mrad. Adapted from [1]

 

 

 

 

[1] Earl J. Kirkland, Some effects of electron channeling on electron energy loss spectroscopy, Ultramicroscopy 102 (2005) 199–207.

 

 

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