This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Copper migrating into silicon active areas can form deep level traps, causing a dramatic decrease of minority carrier lifetime.

In Hf_0.5Ti_0.5O₂, the Ti ions might serve as deep electron traps, resulting in localized levels in the energy gap and thus contributing to charged defects at high Ti concentrations.