|
|
|
|
Analyses |
Probed depth |
Typical and best spatial resolution* |
Sens-itivity to comp-onents |
Vacuum |
Instrument cost per tool |
Usage |
|
Elem-ental
|
Che-mical state |
Phase
|
Defect |
Sur-face |
Ima-ging |
Lattice |
Others |
Atomic Absorption Spectroscopy (AAA)
|
|
|
|
|
|
|
|
|
|
Yes |
Outer atomic layers |
-- |
-- |
Need |
|
Medium |
Large surface area |
|
Vapor Phase Decomposition-Atomic Absorption Spectroscopy (VPD-AAS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Graphite Furnace Atomic Absorption (GFAA)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Flame Atomic Absorption (FAA)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Auger electron spectroscopy (AES)
|
Scanning Auger Microscopy (SAM)
|
|
|
Yes |
Yes |
|
|
|
Yes |
|
|
2 nm |
Typical: 100 nm; Best: < 2 nm |
0.1% |
Need |
>$330k |
Extensive |
All solid, but usually inorganic materials
|
Scanning Auger Microprobe (SAM)
|
Auger Electron Diffraction (AED)
|
Angular Distribution Auger Microscopy (ADAM)
|
|
Cylindrical Mirror Analyzer (CMA)
|
Atom Inelastic Scattering (AIS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Light |
|
|
|
|
|
|
|
|
|
Best: 10, 000 nm |
|
|
|
|
|
Brunauer, Emmett, and Teller equation (BET)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Bidirectional Scattering Distribution Function (BSDF)
|
Bidirectional Reflective Distribution Function (BRDF)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Bidirectional Transmission Distribution Function (BTDF)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Photon |
|
Yes |
|
Yes |
|
|
|
Yes |
10 nm-µm |
1 µm |
ppm |
Need |
<$60k |
Not common |
All solids, usually semiconductors |
Confocal Scanning Laser Microscope (CLSM)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Energy Dispersive (X-Ray) Spectroscopy (EDS)/Energy Dispersive X-Ray Spectroscopy (EDX)
|
|
Electron |
Photon |
Yes |
|
|
|
|
Yes |
|
|
< 1 µm |
Best: 2 - 20 nm |
500 ppm |
Need |
$150 - 400k |
Medium |
All solids with Z> 5 |
|
Electron |
Photon |
|
|
|
|
|
|
Best: 1, 000 nm |
Extensive |
Electron Energy Loss Spectroscopy (EELS)
|
High-Resolution Electron Energy-Loss Spectroscopy (HREELS)
|
Electron |
Electron |
|
Yes |
|
|
Yes |
|
|
|
2 nm |
|
1% |
Need |
>$330k |
Not common |
All solids |
Reflected Electron Energy-Loss Spectroscopy (REELS)
|
Yes |
Yes |
|
|
|
Yes |
|
|
2 nm |
100 nm |
-- |
Need |
|
Not common |
All solids |
Reflection Electron Energy-Loss Microscopy (REELM)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Low-Energy Electron-Loss Spectroscopy (LEELS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Parallel (Detection) Electron Energy-Loss Spectrscopy (PEELS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Extended Energy-Loss Fine Structure (EXELFS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Electron Energy-Loss Fine Structure (EELFS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Core Electron Energy-Loss Spectroscopy (CEELS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Valence Electron Energy-Loss Spectroscopy (VEELS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Electron energy-loss spectroscopy (EELS)
|
|
|
Yes |
Yes |
|
|
|
Yes |
|
|
20-100 nm |
Typical: 1 nm; Best: < 1 nm |
Few % |
Need |
>$500k |
Medium |
All solid thin films |
Electron Probe Microanalysis (EPMA)
|
|
|
Yes |
|
|
|
|
Yes |
|
|
1 µm |
0.5 µm |
100 ppm |
Need |
>$330k |
Medium |
All solids |
Elastic Recoil Spectrometry (ERS)
|
|
|
|
|
|
|
|
|
|
Yes |
1 µm |
mm |
0.01% |
Need |
|
Not common |
Contain H |
Hydrogen Forward Scattering (HFS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Hydrogen Recoil Spectrometry (HRS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Forward Recoil Spectrometry (FRS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Elastic Recoil Detection Analysis (ERDA)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Elastic Recoil Detection (ERD)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Particle Recoil Detection (PRD)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Extended X-Ray Absorption Fine Structure (EXAFS)
|
Surface Extended X-Ray Absorption Fine Structure (SEXAFS)
|
|
|
Yes |
|
|
|
Yes |
|
|
|
1 nm |
mm |
Few % |
Need |
|
Not common |
Surface & adsorbate |
Near-Edge X-Ray Absorption Fine Structure (NEXAFS)
|
|
|
Yes |
|
|
|
|
|
|
X-Ray Absorption Near-Edge Structure (XANES)
|
|
|
|
|
|
|
|
|
Bulk |
Need or no need |
|
All solids |
X-Ray Absorption Fine Structure (XAFS)
|
|
|
|
|
|
|
|
|
|
Ferromagnetic Resonance (FMR)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Orientation ordering, local geometric packing of atoms |
|
|
|
|
|
|
|
Focused ion beam (FIB) |
|
|
|
|
|
|
|
Yes |
|
|
|
5-100 nm |
|
Need |
> $ 1M |
Extensive |
All solids |
Glow Discharge Mass Spectrometry (GDMS)
|
Glow Discharge Mass Spectrometry using a
Quadruple Mass Analyser (GDQMS)
|
|
|
Yes |
|
|
|
|
|
|
|
100 nm |
cm |
ppt-ppb |
Need |
>$330k |
Medium |
Sample forms electrode |
Inductively Coupled Plasma Mass Spectrometry (ICP-MS)
|
Inductively Coupled Plasma (ICP)
|
|
|
Yes |
|
|
|
|
|
|
|
5 µm |
mm |
ppt
|
Need |
$60-330k |
Extensive |
All solids |
Laser Ablation ICP-MS (LA-ICP-MS)
|
|
|
|
|
|
|
|
|
|
Inductively Coupled Plasma Optical Emission (ICP-Optical)/ICP optical emission spectrometry (ICP-OES)
|
Inductively Coupled Plasma (ICP)
|
|
|
Yes |
|
|
|
|
|
|
|
5 µm
|
mm
|
ppb |
Need |
<$60k |
Extensive |
All solids |
Inelastic Electron Tunneling Spectroscopy (IETS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Infrared (Spectroscopy) (IR)
|
Fourier Transform Infra-Red (Spectroscopy) (FTIR)
|
|
|
|
Yes |
|
Yes |
|
|
|
Yes |
Few µm |
15-20 µm |
Variable |
No need |
$60-330k |
Extensive |
All solids |
Gas Chromatography FTIR (GC-FTIR)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Attenuated Total Reflection (ATR)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reflection Absorption (Spectroscopy) (RA)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Infrared Reflection Absorption Spectroscopy (IRAS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Ion Scattering Spectrometry (ISS)
|
|
|
Yes |
|
|
|
|
|
|
|
3 Å |
150 µm |
50ppm-l% |
Need |
|
Not common |
All elements |
Light
Microscopy |
|
|
|
|
|
Yes |
|
Yes |
|
Yes |
Variable |
0.2 µm |
|
No need |
<$60k |
Extensive |
All materials |
Low-Energy Ion Scattering (LEIS)
|
Resonance Charge Exchange (RCE)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Low-Energy Electron Diffraction (LEED)
|
|
|
|
|
|
Yes |
Yes |
|
|
|
1 nm |
0.1 mm |
|
Need |
|
Medium |
Single crystal |
Local electrode atom probe (LEAP)
|
Ion |
Ion |
|
|
|
|
|
|
|
|
|
Best: < 0.1 nm |
|
|
|
|
|
Laser lonization Mass Spectrometry (LIMS)
|
|
|
Yes |
Yes |
|
|
|
|
|
|
100 nm |
2 µm
|
l-100 ppm |
Need |
>$330k |
Medium |
All elements |
Laser Microprobe Mass Analysis (LAMMA)
|
Photon |
Ion |
|
|
|
|
|
|
|
|
|
Best: 1, 000 nm |
|
|
|
|
|
Laser Microprobe Mass Spectrometry (LAMMS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Laser lonization Mass Analysis (LIMA)
|
Nonresonant Multi-Photon lonization (NRMPI)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Medium-Energy Ion Scattering Spectrometry (MEISS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Medium-Energy Ion Scattering (MEIS)
|
|
|
Yes |
|
|
Yes |
Yes |
|
|
|
1 nm |
mm |
0.1-10% |
Need |
>$330k |
Not common |
Normally single crystals |
Magneto-Optic Kerr Rotation (MOKE)
|
Surface Magneto-Optic Kerr Rotation (SMOKE)
|
|
|
|
|
|
|
|
Yes |
|
Yes |
30 nm
|
0.5 µm |
-- |
No need |
<$60k |
Medium |
Magnetic films
|
|
|
|
|
Yes |
|
Yes |
|
Yes |
|
Yes |
1 µm |
100 µm |
ppm |
No need |
$60-330k |
Not common |
All solids, usually semiconductors |
Instrumental Neutron Activation Analysis (INAA)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Near Edge X-Ray Absorption Fine Structure (NEXAFS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Photoelectron microscopy (PEM or PEEM)
|
Photon |
Electron |
|
|
|
|
|
|
|
|
|
Best: < 0.5 nm |
|
|
|
|
|
X-Ray Absorption Near Edge Structure (XANES)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Neutron Activation Analysis (NAA)
|
|
|
Yes |
|
|
|
|
|
|
|
Bulk |
|
ppt-ppm |
No need |
$60-330k |
Not common |
Trace metals |
|
|
|
|
|
Yes |
|
Yes |
|
|
|
Bulk |
|
|
No need |
|
Not common |
Crystals |
Neutron Inelastic Scattering (NIS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Yes |
Up to mm |
|
-- |
No need |
|
Not common |
Flat polymer films |
Nuclear Magnetic Resonance (NMR)
|
Magic-Angle Spinning (MAS)
|
|
|
|
Yes |
Yes |
|
Yes |
|
|
|
Bulk |
-- |
-- |
|
|
|
All solid; not all elements |
Nuclear Reaction Analysis (NRA)
|
|
|
Yes |
|
|
|
|
|
|
|
10-100 nm |
10 µm
|
10-100 ppm
|
Need |
|
Not common |
Materials with Z<21 |
Optical Emission Spectroscopy (OES)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Yes |
-- |
|
-- |
No need |
<$60k |
Not common in general, but common in semiconductors |
Flat smooth films |
Photoacoustic Spectroscopy (PAS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Particle Induced X-Ray Emission (PIXE)
|
|
|
Yes |
|
|
|
|
Yes |
|
|
Few µm |
100 µm |
10 ppm |
Need |
>$330k |
Not common |
All solids |
Proton-induced x-ray emission (PIXE)
|
Ion |
Photon |
|
|
|
|
|
|
|
|
|
Best: < 500 nm |
|
|
|
|
|
Hydrogen/Helium Induced X-ray Emission (HIXE)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Photoluminescence Excitation (PLE)
|
|
|
|
Yes |
|
Yes |
|
Yes |
|
Yes |
Few µm |
Few µm |
ppb |
No need |
<$60k |
Medium |
All solids, usually semiconductors |
|
Electron Beam Electroreflectance (EBER)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reflection Difference Spectroscopy (RDS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Raman Spectroscopy (Raman)
|
Fourier Transform Raman Spectroscopy (FT Raman)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Yes |
|
Yes |
|
|
|
Yes |
Few µm |
1 µm |
Variable |
No need |
$60-330k |
Medium |
All solids |
Resonant Raman Scattering (RRS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Coherent Anti-Stokes Raman Scattering (CARS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Surface Enhanced Raman Spectroscopy (SERS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rutherford backscattering spectroscopy (RBS)
|
Ion |
Ion |
Yes |
|
|
Yes |
Yes |
|
|
|
2 µm |
mm; Best: ~ 1 µm |
0.01-10% |
Need or no need |
>$330k |
Medium |
All materials |
High-Energy Ion Scattering (HEIS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reflected High Energy Electron Diffraction (RHEED)
|
Scanning Reflection Electron Microscopy (SREM)
|
|
|
|
|
|
Yes |
Yes |
|
|
|
1 nm |
0.01-0.02 mm |
|
Need |
|
Medium |
Single crystal |
Surface Analysis by Laser lonization (SALI)
|
Post-Ionization Secondary Ion Mass Spectrometry (PISIMS)
|
|
|
Yes |
Yes |
|
|
|
|
|
|
3 Å
|
100 nm
|
ppb-ppm |
Need |
>$330k |
Not common |
Most inorganic |
Multi-Photon Nonresonant Post lonization (MPNRPI)
|
|
|
|
|
|
|
Multiphoton Resonant Post lonization (MRRPI)
|
|
|
|
|
|
|
Resonant Post lonization (RPI)
|
|
|
|
|
|
|
Multi-Photon lonization (MPI)
|
|
|
|
|
|
|
Single-Photon lonization (SPI)
|
|
|
|
|
|
|
Sputter-Initiated Resonance lonization Spectroscopy (SIRIS)
|
|
|
|
|
|
|
Surface Analysis by Resonant lonization Spectroscopy (SARIS)
|
|
|
|
|
|
|
Time-of-Flight Mass Spectrometer (TOFMS)
|
|
|
|
|
|
|
Scanning Electron Microscopy/Scanning Electron Microprobe/Secondary Electron Miscroscopy (SEM)
|
|
Electron |
Electron |
|
|
|
Yes |
|
Yes |
|
|
sub µm |
Typical: 2- 10 nm |
|
Need |
$60-330k |
Extensive |
Conductors, metal-coated insulators |
Backscattered Electron (BSE)
|
Secondary Electron Microscopy with Polarization Analysis (SEMPA)
|
Scanning Force Microscopy (SFM)
|
|
|
|
|
|
Yes |
Yes |
Yes |
|
|
sub Å |
1 nm |
|
No need |
$60-330k |
Medium |
All solids |
Scanning thermal microscopy (SThM) or scanning near-field thermal microscopy (SNThM) |
Constant current SNThM |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Constant temperature SNThM |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Scanning thermal profiler (SThP) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tunneling thermometer (TT) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Scanning electrochemical microscopy (SECM) |
Direct mode SECM |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Feedback mode SECM |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Generation/collection mode SECM |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Scanning reference electrode technique (SRET) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Scanning vibrating electrode technique (SVET) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Scanning photoelectrochemical microscopy (SPECM) |
|
|
|
|
|
|
|
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Scanning electrochemical induced desorption (SECMID) |
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Scanning micropipette microscopy (SMM) |
Scanning micropipette molecule microscopy (SMMM) |
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Scanning ion conductance microscopy (SICM) |
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Scanning of near-field acoustic microscopy (SNAM)
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Scanning Probe Microscopy ( SPM) |
Contact mode (CM) or atomic force microscopy (AFM) |
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Electric force microscopy (EFM) or scanning maxwell stress microscopy (SMM)
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DC (direct current) - Magnetic force microscopy (MFM)
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AC (alternating current) - Magnetic force microscopy (MFM)
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AC - Piezoresponse force microscopy ( PFM)
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DC - Constant height AFM |
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DC - Constant force AFM |
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DC - Lateral force microscopy (LFM) or friction force microscopy (FFM) |
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DC - Scanning chemical force microscopy (SCFM) |
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DC - Conducting atomic force microscopy (C-AFM) |
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DC - Scanning voltage microscopy (SVM) |
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DC - Scanning spreading resistance microscopy (SSRM) |
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DC - Contact scanning capacitance microscopy (CM-SCM) |
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DC - Contact error AFM |
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AC - Contact EFM |
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AC - Atomic force acoustic microscopy (AFAM) |
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AC - Young's modulus microscopy (YMM) or force modulation microscopy (FMM) |
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Tapping mode AFM (TM-AFM) or intermittent contact (IC-AFM) |
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TM - Phase imaging AFM |
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TM error AFM |
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TM scanning capacitance microscopy (TM-SCM) |
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Non-contact mode SFM (NC-SFM) |
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Scanning surface potential microscopy (SSPM) |
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Scanning kelvin microscopy (SKM) or Kelvin probe microscopy (KPM) |
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Non-contact scanning capacitance microscopy (NC-SCM) |
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van der Waals force microscopy (VDWFM) or scanning attractive mode force microscopy (SAFM) |
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Frequency modulation scanning force microscopy (FM-SFM) |
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Dissipation force microscopy
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Scanning near-field optical microscopy (SNOM) or near-field scanning optical microscopy (NSOM) |
Shear force microscopy (ShFM) |
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Aperture SNOM (ASNOM) |
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Transmission ASNOM (T-ASNOM) |
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Collection ASNOM (C-ASNOM) or reflection mode |
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Emission ASNOM (E-ASNOM) or luminescence mode |
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Non-aperture SNOM (NA-SNOM) |
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Evanescent field SNOM (EF-SNOM) or photon scanning tunneling microscopy (PSTM) or evanescent field optical microscopy (EFOM) |
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Scanning near-field plasmon microscopy (SNPM) or scanning plasmon near-field microscopy (SPNM) |
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Scanning near-field infrared microscopy (SNIM) |
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Scanning near-field Raman microscopy (SNRM)
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Scanning tunneling spectroscopy (STS) |
I(z) spectroscopy or Local barrier height spectroscopy (LBHS)
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I(V) spectroscopy |
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Spin-polarized scanning tunneling spectroscopy (SPSTS) |
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Phonon spectroscopy by inelastic electron tunneling (IET) |
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Photoassisted tunneling spectroscopy (SFES) |
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Tunneling-induced luminescence spectroscopy (TILS) |
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Ballistic electron emission spectroscopy (BEES) |
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Scanning field emission spectroscopy (SFES)
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Scanning force spectroscopy (SFS) |
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Amplitude-distance curves |
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Phase-distance curves |
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Frequency-distance curves |
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Kelvin probe spectroscopy |
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Scanning capacitance spectroscopy |
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Full-resonance spectroscopy (FRS) |
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AFAM resonance spectroscopy (AFAM-RS) |
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Scanning spreading resistance spectroscopy (SSRS) |
|
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|
Scanning near-field optical microscopy (SNOM) or near-field scanning optical microscopy (NSOM) |
Scanning near-field luminescence spectroscopy (SNLS) |
|
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Scanning near-field Raman spectroscopy (SNRS) |
|
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|
|
Secondary Ion Mass Spectrometry (SIMS)
|
Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)
|
Ion |
Ion |
Yes |
|
|
|
|
Yes |
|
|
2 nm |
1 µm |
ppb-ppm |
Need |
>$330k |
Extensive |
All solids, mostly semiconductors |
Static Secondary Ion Mass Spectrometry (Static SIMS)
|
Yes |
Yes |
Yes |
3 Å |
100 µm |
Few % |
Need |
>$330k |
Medium |
All, but mostly polymer |
SIMS using a Quadruple Mass Spectrometer (Q-SIMS)
|
|
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|
|
SIMS using a Magnetic Sector Mass Spectrometer (Magnetic SIMS)
|
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|
|
Sector SIMS (Magnetic SIMS)
|
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|
|
SIMS using Time-of-Flight Mass Spectrometer (TOF-SIMS)
|
|
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|
|
Post lonization SIMS (PISIMS)
|
|
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|
|
Sputtered Neutrals Mass Spectrometry/Secondary Neutrals Mass Spectrometry (SNMS)
|
Direct Bombardment Electron Gas SNMS (SNMSd)
|
|
|
Yes |
|
|
|
|
|
|
|
~2 nm |
cm |
50 ppm |
Need |
$60-330k |
Medium |
Flat conductors |
Spark Source Mass Spectrometry (SSMS/Spark Source)
|
|
|
|
|
|
|
|
|
|
|
3 µm
|
cm
|
0.05 ppm |
Need |
|
Medium |
Sample forms electrode |
Scanning Tunneling Microscopy (STM)
|
Constant current STM |
|
|
|
|
|
Yes |
Yes |
Yes |
|
|
sub Å |
1 Å |
|
No need |
$60-330k |
Not common |
Conductors |
Constant height STM |
|
|
|
|
|
|
|
Current imaging tunneling spectroscopy (CITS) |
|
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|
|
Electrochemical scanning tunneling microscopy (ESTM) |
|
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|
|
Scanning noise microscopy (SNM) |
|
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|
|
Scanning tunneling potentiometry (STP) |
|
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|
Scanning noise potentiometry (SNP) |
|
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|
Alternating current STM (ACSTM) |
|
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|
Scanning chemical potential microscopy (SCPM) |
|
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Scanning optical absorption microscopy (SOAM) |
|
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|
Spin polarized STM (SPSTM) |
|
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|
Ballistic electron emission microscopy (BEEM) |
|
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|
|
Photon emission STM (PESTM) or scanning tunneling optical microscopy (STOM) |
|
|
|
|
|
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|
|
|
Photon assisted STM (PASTM) or laser assisted STM (LASTM) |
|
|
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|
|
Scanning field emission microscopy (SFEM) |
|
|
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|
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|
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|
|
|
Transmission Electron Microscopy (TEM)
|
Conventional Transmission Electron Microscopy (CTEM)
|
|
|
|
|
Yes |
Yes |
Yes |
Yes |
|
|
1 - 200 nm |
5 nm - µm |
|
Need |
$ 1 -3 M |
Not common for most materials, but extensive for nano-structures and defects |
All solids with thicknesses of less than 200 nm |
Bright field (BF)- Scanning Transmission Electron Microscopy (STEM) |
|
|
Yes |
Yes |
Yes |
Yes |
|
|
100-200 nm |
Best: < 0.1 nm |
|
|
|
|
|
|
|
Yes |
|
|
|
High Resolution Transmission Electron Microscopy (HRTEM)
|
|
|
|
|
|
|
Yes |
|
|
|
|
Selected Area Diffraction (SAD)
|
|
|
|
|
|
|
|
|
|
Best: 10 - 1000 nm |
|
Analytical Electron Microscopy (AEM)
|
|
|
|
|
|
|
|
|
|
|
|
Convergent Beam Electron Diffraction (CBED)
|
|
|
|
|
|
|
|
|
|
Best: 10 - 1000 nm |
|
Lorentz Transmission Electron Microscopy (LTEM)
|
|
|
|
|
|
|
|
|
|
|
|
Thermal Energy Atom Scattering (TEAS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Thin Layer Chromatography (TLC)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tandem Scanning Reflected-Light Microscope (TSRLM)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tandem Scanning Reflected-Light Microscope (TSM)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Ultraviolet photoelectron spectroscopy (UPS)
|
Photon |
Electron |
|
Yes |
|
|
Yes |
|
|
|
1 nm |
Typical: mm; Best: < 1, 000 nm |
|
Need |
|
Not common |
All solids |
Molecular Photoelectron Spectroscopy (MPS)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Variable Angle Spectroscopic Ellipsometry (VASE)
|
|
|
|
|
|
|
|
|
|
Yes |
1 µm |
cm |
-- |
No need |
$60-330k |
Not common |
Flat thin films |
Wavelength Dispersive (X-Ray) Spectroscopy (WDS/WDX)
|
|
Photon |
Yes |
|
|
|
|
|
|
|
|
|
0.01 - 0.1% |
Need |
<$60k |
Not common |
All solids |
X-ray photoelectron spectroscopy (XPS)
|
Photon |
Electron |
Yes |
Yes |
|
|
|
|
|
|
3 nm |
Typical: 150 µm; Best: 5 – 10 nm |
1% |
Need |
>$330k |
Extensive |
All solids |
Electron Spectroscopy for Chemical Analysis (ESCA)
|
X-Ray Photoelectron Diffraction (XPD)
|
|
|
Yes |
Yes |
|
|
Yes |
|
|
|
3 nm |
150 µm |
1% |
Need |
>$330k |
Not common |
Single crystal |
Photoelectron Diffraction (PHD)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Grazing Incidence X-Ray Diffraction (GIXD/GIXRD)
|
Photon |
Photon |
|
|
Yes |
|
|
|
10 µm |
Typical: mm; Best: < 25 nm |
3% |
No need |
$60-330k |
Extensive |
Crystals |
Double Crystal Diffractometer (DCD)
|
X-Ray Fluorescence spectroscopy (XRF)
|
X-Ray Fluorescence Spectroscopy (XFS)
|
Photon |
Photon |
Yes |
|
|
|
|
|
|
|
10 µm |
mm |
0.1% |
No need |
$60-330k |
Extensive |
All solids |
Total Reflection X-Ray Fluorescence (TXRF)
|
Yes |
|
|
|
|
Yes |
|
|
3 nm |
cm |
ppb-ppm |
Need |
>$330k |
Not common |
Trace heavy metals |
Total Reflection X-Ray Fluorescence (TRXFR)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
X-ray absorption spectroscopy (XAS)
|
Photon |
Photon |
|
|
|
|
|
|
|
|
|
Best: < 20 nm |
|
|
|
|
|
X-ray emission spectroscopy (XES)
|
Electron |
Photon |
|
|
|
|
|
|
|
|
|
Best: 1.5 – 10 nm |
|
|
|
|
|
Vapor Phase Decomposition Total X-Ray Fluorescence (WD-TXRF)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
