Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| The Ga (gallium) ions in conventional FIB milling typically leave vacancy-interstitial pairs in the milled surfaces, ending with Ga interstitials as the primary particles come to rest. The amount of vacancies generated in FIB milling depends on the penetration depth of the ions in the target. In the case of Ga ion irradiation on Ag (silver) films with a 30-keV beam, the vacancies are generated within ∼10 nm of the target surface even though the range of these Ga ions in Ag material is ∼25 nm. On the other hand, the number of vacancies generated by the same beam on the Ag material is more than 300 per ion.
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