Thermodynamic Stability of Metal Gate Oxides in ICs
- Practical Electron Microscopy and Database -
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


In high k dielectric MOS structures in ICs, the metal gate oxides must not react with Si (silicon) to form either SiO2 or a silicide,

         MO2 + Si = M + SiO2 ------------------------------- [2910a]
         MO2 + 2Si = MSi + SiO2 ------------------------------- [2910b]

         M -- The metal element.

Chemical reaction Equation 2910a results in a SiO2 layer that has a lower dielectric constant than the high k material. Equation 2910b forms a silicide, resulting in electrical short failure.




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