This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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The sensitivities of different thermal laser stimulation techniques are not equal in electrical failure analysis (EFA) for ICs. For OBIRCH, the constant voltage bias mode yields limited detection sensitivity [1] in detection of short failures, while the constant current biasing approach in TIVA yields greater sensitivity [2]. Even though using the same technique, the sensitivity can still be different based on the failure environments. For instance, it had been found that thermally-induced power changes are usually greater for shorted signal lines than power busses [2].

[1] K. Nikawa and S. Inoue, “ Various Contrasts Identifiable From the Backside of a Chip by 1.3 pm Laser Beam Scanning and Current Changing Imaging”, ISTFA, 1996, pp. 387-392.
[2] Cole, EI; Tangyunyong, P; Barton, DL, Backside localization of open and shorted IC interconnections, 36th Annual IEEE International Reliability Physics Symposium, (1998). DOI: 10.1109/RELPHY.1998.670462.