Practical Electron Microscopy and Database

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

LaAlO₃

Table 2065a. Properties of amorphous LaAlO3. Static dielectric constant (K) 30 Conduction band (CB) offset on silicon substrate 1.8 Band gap energy (eV) 5.6 Table 2065b shows the summary of 2003 Roadmap, listing the node, gate length, equivalent oxide thickness of high power (CPU) and low standby power devices (mobile), gate oxide material, and gate electrode material. Table 2065b. Summary of 2003 Roadmap. Year 2001 2003 2005 2007 2009 2012 2016 2018 Node 130 100 80 65 45 32 22 18 ASIC 1/2 pitch 150 107 80 65 45 32 25 18 Physical gate length 65 45 32 25 20 13 9 7 Tox hi power 1.5 1.3 1.1 0.9 0.8 0.6 0.5 0.5 Tox lo power 2.2 2.1 1.6 1.4 1.1 1.0 0.9 Gate oxide Oxynitride HfOx; Si,N LaAlO3 Gate metal Poly Si Metal gate, e.g. TaSiNx