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HfSiO4
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Table 2068. Properties of amorphous HfSiO4.
Static dielectric constant (K) |
11 |
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1.8 |
Band gap energy (eV) |
6.5 |
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The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. You can click How to Cite This Book to cite this book. If you let Yougui Liao know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.
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