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| Table 2082. Properties of Al2O3.
Figure 2082a shows the variation of micro-hardness with deposition temperature for Al2O3.
Figure 2082a. Variation of micro-hardness with deposition temperature for Al2O3. It was suggested that the binding energies of Al 2p (74.10 eV) and O 1s (530.70 eV) peaks were lowered by 0.4 eV and 0.5 eV, respectively, after annealing because of a phase transition from an amorphous phase to the γ -Al2O3 phase. [1, 2] Figure 2082b shows the REELS spectra for the Al2O3/SiO2 thin films on Si substrates, before and after annealing, at a primary energy of 1.0 keV. The onset due to electron–hole excitation corresponds to the band gap values of the dielectric films. Therefore, the band gap energy is given by the crossing point found by drawing a linear fit line from a point near the onset of the loss spectrum to the background level. [3 -5].
[1] Moulder J F, Stickle W F, Sobol P E and Bomben K D 1995
Handbook of X-Ray Photoelectron Spectroscopy
ed J Chastain and R C King Jr (Eden Prairie: Physical
Electronics, Inc.)
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