Fatigue in Ferroelectrics
- Practical Electron Microscopy and Database -
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In general, the ferroelectric fatigue is the dominant failure mechanism in FeRAMs, and thus must be minimized to prevent unintended memory malfunction during the specified lifetime. As shown in Figure 1796, Fatigue in ferroelectrics is a type of degradation phenomena in ferroelectric materials and is defined as the change of ferroelectric properties (e.g. the remanent polarization becomes small) with load cycles, including polarization reversals. Therefore, the fatigue also measures the loss of charge on repetitive switching. For FeRAM technology, the actual cycles for the fatigue test are ~1012.
With fatigue in ferroelectrics, due to the decrease of the remanent polarization, the charge difference between logic “0” and “1” for FeRAM devices becomes smaller, which may cause failure. The degree of fatigue is quantified by the decrease of switchable polarization with respect to the number of switching cycles.
In practice, fatigue can be induced by both bulk- and interface-related phenomena as follows:
Some efforts have been taken to overcome the fatigue problem:
 E. L. Colla, D.V. Taylor, A.K. Taganstev, N. Setter: Appl. Phys. Lett. 72,
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