Integrated Reflection Coefficient
- Practical Electron Microscopy and Database -
- An Online Book -  

This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


Integrated reflection coefficient in TEM is the ratio of the integrated scattered beam intensity to the initial beam intensity received by a real crystalline sample from the incident beam in a real electron scattering measurement. In the case of X-ray diffraction measurements, the beam is X-ray instead of incident electrons.

For instance, in the kinematic theory of electron scattering, the integrated reflection coefficient is given by,

         Two-beam dynamical diffraction conditions / first Bethe approximation in TEM Measurements ------------------------------------------------------------------ [2712a]
         Two-beam dynamical diffraction conditions / first Bethe approximation in TEM Measurements ------------- [2712b]

         L -- The Lorentz factor in unit of length,
         I0 -- The intensity of the incident electron beam,
         S -- The illuminating area by the incident electron beam,
         Φhkl -- Fourier coefficients of an electrostatic potential,
         Fhkl -- The structure factors,
         A -- The thickness of the crystal in the TEM specimen,
         σ -- The interaction constant between the incident electrons and specimen,
         Θ -- The half of the angle between the transmitted and scattered electron beams,
         ξhkl -- The extinction distance.




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