Electron microscopy
 
Doped Crystalline and Amorphous Si
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Table 1174. Crystalline (c-Si) and amorphous silicon (a-Si) doped by arsenic (As), boron (B), phosphorus (P) and others. 

Materials Carrier (cm-3) Impurity
(cm-3)
Strain % Stress Lattice Measurement technique Reference
As-doped c-Si 1.8x1020 3.8x1020 0 Tensile Tetragonal XRD/CBED(experimental + theoretical calculation) [1]
2.6x1020 9.3x1020 0.138
1.7x1020 1.9x1021 0.356
  4.2x1021 0.52
B-doped c-Si   0 - 8x1019 0 - 0.05     Raman shift [5]
B-doped c-Si   ~1020 0.0112 - 0.0506     Raman shift [4]
Etch-released B-doped c-Si film   1.1x1020 0.0510 Tensile     [6]
Etch-released B-doped c-Si film   0 - 1.2x1020 0 - 0.1 Tensile   Strainmeter [7]
Strained Si on c-SiGe     0-2.4% Tensile   High resolution X-ray rocking curves [3]
c-SiGe     1.22% Tensile   Nanobeam diffraction coupled with precession [2]

 

 

 

 

 

 

 

 

 

[1] G. Borot, L. Rubaldo, L. Clement, R. Pantel, and D. Dutartre, Tensile strain in arsenic heavily doped Si, JOURNAL OF APPLIED PHYSICS 102, 103505 2007.
[2] A. D. Darbal, R. D. Narayan, C. Vartuli, G. Lian, R. Graham, F. Shaapur, S. Nicolopoulos and J. K. Weiss, Automated High Precision Strain Measurement Using Nanobeam Diffraction Coupled with Precession, Microsc. Microanal. 19 (Suppl 2), 2013.
[3] Heather Eve Randell, Applications of Stress from Boron Doping and Other Challenges in Silicon Technology, thesis, University of Florida, 2005.
[4] J. Hersener, H-J. Herzog, L. Csepregi, Microcircuit Engineering, Academic Press, London, p 309, (1985).
[5] M. Bowden, D. J. Gardiner, M. A. Lourengo, J. Hedley, D. Wood, J. S. Burdess and A. J. Harris, Dopant Mapping and Strain Analysis in B Doped Silicon Structures using Micro-Raman Spectroscopy, Mat. Res. Soc. Symp. Proc., Vol. 518, Materials Research Society (1998).
[6] H. J. Herzog, L. Csepregi, H. Seidel, JES, 131, 2969 (1984).
[7] L. Bruce Wilner, Strain and Strain Relief in Highly Doped Silicon, DOI: 10.1109/SOLSEN.1992.228272, (1992).

 

 

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