Table 1174. Crystalline (c-Si) and amorphous silicon (a-Si) doped by arsenic (As), boron (B), phosphorus (P) and others.
Materials |
Carrier (cm-3) |
Impurity (cm-3) |
Strain % |
Stress |
Lattice |
Measurement technique |
Reference |
As-doped c-Si |
1.8x1020 |
3.8x1020 |
0 |
Tensile |
Tetragonal |
XRD/CBED(experimental + theoretical calculation) |
[1] |
2.6x1020 |
9.3x1020 |
0.138 |
1.7x1020 |
1.9x1021 |
0.356 |
|
4.2x1021 |
0.52 |
B-doped c-Si |
|
0 - 8x1019 |
0 - 0.05 |
|
|
Raman shift |
[5] |
B-doped c-Si |
|
~1020 |
0.0112 - 0.0506 |
|
|
Raman shift |
[4] |
Etch-released B-doped c-Si film |
|
1.1x1020 |
0.0510 |
Tensile |
|
|
[6] |
Etch-released B-doped c-Si film |
|
0 - 1.2x1020 |
0 - 0.1 |
Tensile |
|
Strainmeter |
[7] |
Strained Si on c-SiGe |
|
|
0-2.4% |
Tensile |
|
High resolution X-ray rocking curves |
[3] |
c-SiGe |
|
|
1.22% |
Tensile |
|
Nanobeam diffraction coupled with precession |
[2] |
[1] G. Borot, L. Rubaldo, L. Clement, R. Pantel, and D. Dutartre, Tensile strain in arsenic heavily doped Si, JOURNAL OF APPLIED PHYSICS 102, 103505 2007.
[2] A. D. Darbal, R. D. Narayan, C. Vartuli, G. Lian, R. Graham, F. Shaapur, S. Nicolopoulos and J. K. Weiss, Automated High Precision Strain Measurement Using Nanobeam Diffraction Coupled with Precession, Microsc. Microanal. 19 (Suppl 2), 2013.
[3] Heather Eve Randell, Applications of Stress from Boron Doping and Other Challenges in Silicon Technology, thesis, University of Florida, 2005.
[4] J. Hersener, H-J. Herzog, L. Csepregi, Microcircuit Engineering, Academic
Press, London, p 309, (1985).
[5] M. Bowden, D. J. Gardiner, M. A. Lourengo, J. Hedley, D. Wood, J. S. Burdess and A. J. Harris, Dopant Mapping and Strain Analysis in B Doped Silicon Structures using Micro-Raman Spectroscopy, Mat. Res. Soc. Symp. Proc., Vol. 518, Materials Research Society (1998).
[6] H. J. Herzog, L. Csepregi, H. Seidel, JES, 131, 2969 (1984).
[7] L. Bruce Wilner, Strain and Strain Relief in Highly Doped Silicon, DOI: 10.1109/SOLSEN.1992.228272, (1992).
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