Table of Contents/Index
Chapter/Index:
Introduction
|
A
|
B
|
C
|
D
|
E
|
F
|
G
|
H
|
I
|
J
|
K
|
L
|
M
|
N
|
O
|
P
|
Q
|
R
|
S
|
T
|
U
|
V
|
W
|
X
|
Y
|
Z
|
Appendix
Chapter V
V
III-V compounds
Vacancy
Vacancy concentration at surface
Vacancy concentration in bulk
Clustering of vacancies into dislocation loops
Detection of vacancies
Vacancy detection by elemental diffusion
Vacancy generation in FIB milling
Point defects (vacancy & interstitial) generated in Ar-milling
Vacuum systems, gauges, and applications
ACD (anti-contamination device) operation on TEM system
Vacuum levelsin EMs & units conversion
Mechanical vacuum pumps
Vacuum levels and UHV (ultra-high vacuum) in EMs
Grease of vacuum seals
Vacuum contamination in EMs
Vacuum of GIF camera chamber
Vacuum sealed electron transparent windows for in-situ TEM
Vacuum evaporator in EMs
Vacuum range/efficiency & pump combination
Vacuum at EM stages
Vacuum requirements of EMs for microelectronics industry
Vacuum of electron source/gun
van der Waals bonding-type substances
Valence band:
Outer-/Outermost-shell electrons (electrons in valence- and conduction-bands)
Valence electron energy loss spectroscopy (VEELS)
Excitation of the valence-band/outer-shell electrons due to energetic electron irradiation
Density of valence electrons of materials
Valence state controlled by charge neutrality
Comparison between VEELS and conventional optical spectroscopy
Outer d shell electrons
Analysis of valence states by white-lines in EELS
Conduction- & valence-band offsets
Comparison between valence band (outer) and core (inner) electrons
Inelastic scattering from outer-shell electrons shown in EELS profile
Valence electron energy modified by bond formation
Oxidation states (oxidation number, degree of oxidation) in periodic table
Atomic & ionic radii and valence states of chemical elements in periodic table
Valves
GIF gate valve
Switching valves
Vanadium (V)
Misfit layer chalcogenides: (AX)
1+δ
(BX
2
)
n
(A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se)
EELS measurement of vanadium (V)
van de Graaff generators
Vernier structures
Vector description of crystal dislocations
Very-large-scale integration (VLSI) for ICs
Via overetch detected by IR-OBIRCH
Vibration
Mechanical vibration effects on EMs
Vibration of atoms induced by electron irradiation
Vibrational spectroscopy in EELS
Vibration of atoms/phonon
Video recording software on EMs
Viewing screen/fluorescent screen in EMs
Visual inspection for destructive and/or nondestructive analysis of IC devices
Virtual objective aperture (VOA) in TEM/STEM
Virtual objective aperture (VOA) in SEM
VO
2
, V
2
O
3
, V
6
O
13
, and several Magnéli phase (V
n
O
2n-1
)
Visibility
Visibility of electron diffraction
Visibility/contrast of dislocations and stacking faults in TEM and EMs
Visibility of Kikuchi lines
Visible light
Visibility/contrast of images
Voids
Voids formed in Si at contact interfaces
Void formation and circuit opening due to electromigration in ICs
Void detection in ICs
Void-formation-induced failure in cobalt silicidation in ICs
Void formation by Nabarro–Herring creep
Void/bubble/hole in materials
TEM detection limit of bubble/void/holes in materials
TEM/HRTEM contrast of bubble/void/holes in materials
Voltage
Ultrahigh voltage TEMs
Voltage centering in TEM
Light-induced voltage alteration (LIVA)
Thermally induced voltage alteration (TIVA)
Voltage of incident electrons for EELS measurements
Voltage at biprism filament in off-axis electron holography
Voltage doubler
Voltage axis in TEM
Voltage contrast in FIB and SEM
Passive voltage contrast (PVC) in FIB and SEM
Active voltage contrast (AVC) in FIB and SEM
Positive charging case of passive voltage contrast (PVC) in FIB and SEM
Negative charging case of passive voltage contrast (PVC) in SEM
Artifacts in passive voltage contrast (PVC) in FIB and SEM
Short failure in IC devices detected by passive voltage contrast (PVC)
Capacitive coupling voltage contrast (CCVC)
Dynamic characteristics of voltage contrast
Interval scan of electron beam enhancing voltage contrast
Volume of unit cells
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