Table of Contents/Index
Chapter/Index:
Introduction |
A | B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
| Salary and job positions for electron microscopists |
|
| Sample for EMs |
| Sample requirements for high resolution atomic-number contrast HAADF imaging |
SEM samples |
| TEM samples |
Carbon supports for EM analysis |
| Sample stages/holders in EMs and FIB |
Coating to avoid charging in SEM samples |
| Sample-tilt in TEM |
| Sample-tilt induced effects in TEM |
Diffraction variation due to TEM sample tilt |
|
| Sapphire: Al2O3 |
| Satellites |
| Main and satellites reflections in electron diffraction patterns |
Modulation/satellite reflections due to mutually commensurate mismatch |
| Saturation |
| Electron gun saturation |
Binning versus saturation/exposure time in CCD camera |
| Saturation of CCD camera |
| Binning versus saturation/exposure time in CCD camera |
Smearing/blooming in CCD |
| Streaks formed by smearing/blooming in CCD camera |
Streaking of diffraction spots due to thin structures in TEM specimens |
| Saturation of point defects |
| Savitzky-Golay filter |
| Scaling |
| Current density scaling of interconnects in ICs |
Scaling of CMOS-FET |
| Scaling in IC designs |
| Scan speed/dwell time of detectors and cameras in TEM/STEM imaging and elemental mapping |
| Scandium (Sc) |
| Sc2O3 |
| Scanning of electron bean |
| Electron-beam scanning/deflecting coil control system in EMs |
Scanning coils in EELS/GIF systems |
| Scanning electron microscopy (SEM) |
| Comparison between backscattered electron & secondary electron imagings |
Comparison of TEM and SEM |
| Key Geometric, Materials, Thermal, and Electrical Tolerances in SEM |
|
| Advanced/atomic/high resolution/latest SEMs |
| Contrast in SEM Images |
Charging of electrically isolated materials in SEM |
| EELS measurements in EMs with low-energy incident electrons |
Cs correction in SEM |
| Active voltage contrast (AVC) in FIB and SEM |
Low-voltage scanning electron microscopy (LVSEM) |
| Negative charging case of PVC in SEM |
Passive voltage contrast (PVC) in FIB and SEM |
| Positive charging case of PVC in FIB and SEM |
Schematic diagram of SEM systems |
| SEM observation of structures underneath insulators |
Virtual objective aperture (VOA) in SEM |
| Objective lens in SEMs/STEMs |
Objective polepieces in EMs |
| Challenges in in-line SEM inspection on wafers |
|
| Tilt of electron beam in EMs |
Bias/voltage in SEM for SE and BSE separations |
| Incoherence/energy spread in SEM imaging |
SEM spatial resolution affected by accelerating voltage of electron beam |
| Tomographic properties of SEM and dual-beam techniques |
Wave function of focused probe in STEM/SEM |
| X-ray detector & EDS comparison in SEM/TEM/STEM |
Desktop/portable/tabletop SEM |
| Dual beam FIB/SEM |
Manufacturers/companies producing FIB & EM instruments |
| Cryo-focused ion beam-SEM (FIB-SEM) |
Effect of hydrocarbon in SEM observation |
| Dependence of electron probe/beam current on probe size in EMs |
Development history of SEM technique |
| SEM: HRSEM/high resolution SEM imaging |
| Effect of amorphous layer on contrast of high resolution/HRSEM images |
HRSEM image contrast as function of crystal tilt |
| SEM resolution affected by delocalization of inelastic scattering |
|
| Working distance in SEM and its effects on image contrast |
|
| Scanning electron microscopy (SEM) sample and its preparation |
| Advantages and disadvantages of FIB technology for EM sample preparations |
Curtain effect in FIB-EM sample preparation |
| Voids generated during sample preparation |
|
| Nanoparticles sample |
Double cross-sections for examination of damage of prepared EM sample surface |
| Plasma cleaning of FIB prepared specimens |
Sample preparation for EBSD analysis |
| "Mixed" inelastic scattering and its EELS |
| Alignments |
| Scanning helium ion microscopy (SHIM or HeIM) |
| Scanning probe microscopy (SPM) |
| Piezoresponse atomic-force microscopy (PFM) |
|
| Scanning-tunneling microscope (STM) |
| Scattering |
| Electron scattering within TEM specimen |
Electron scattering within SEM specimen |
| Weak scattering in some materials in TEM observations |
Most possible scattering angle of incident electrons for atomic ionization/energy loss |
| Dependence of scattering of incident electrons on scattering angle |
Angular-resolved electron scattering |
| Scattering potential of crystal |
Electron atomic scattering factors |
| X-ray atomic scattering factors |
X-rays generated by scattered electron: an EDS artifact |
| Scattering vector/transferred wave vector after electron scattering with matter |
Schrödinger equation |
| Scherzer |
| Scherzer defocus |
Scherzer expression/resolution/limit |
| Scherzer theorem |
Ronchigram at Gaussian/Scherzer focus |
| Scherzer phase plate |
| Optimal objective/Scherzer apertures
in CTEM & HRTEM imaging |
Maximum (phase-)contrast in (HR)TEM imaging (with Scherzer defocus) |
| Schoenflies notations of point groups |
Schottky and other barrier heights |
| Schottky emission electron guns |
Schottky effect |
| Scintillator |
| Scintillator-photomultiplier (PM) system |
Ce-doped yttrium-aluminum garnet (YAG) |
| Electron backscattering from scintillator in EMs |
Scintillating material |
| Scintillator-coupled CCD camera |
| Screw-axis |
| Effect of screw axis on electron diffraction patterns |
| Screw dislocations |
Screw dislocations versus edge dislocations |
| Scripts for Gatan Digital Micrograph |
Scroll vacuum pumps |
| Second-order phase transitions |
|
Second-order aberration corrections |
Secondary electron detector in TEM/STEM |
| Second order Laue zones (SOLZ) |
| Standard SOLZ diffraction patterns for various crystal structures |
| Secondary electrons |
| Application of SEs other than electron microscopy |
Disadvantages and harm of SE in some cases |
| Dependence of emission coefficient of secondary electrons on atomic number and accelerating voltage of incident beam |
SE1/SE2 ratio (between different types of secondary electrons) affected by energy of primary electron beam |
| SE emitted from TEM thin film |
Escape depth of secondary electrons |
| Separating BSEs from SEs in SEM |
Trajectory of secondary electrons |
| Secondary electron energy spectroscopy |
Redistribution and redistribution rate of SEs |
| Kinetic energy of secondary electron |
EDS signal affected by secondary and backscattered electrons |
| Secondary electron detectors in SEM (SEM detectors) |
| Collection efficiency of secondary electrons in SEM |
In-lens (immersion lens/through-the lens) SEM detectors |
| Everhart-Thornley (ET) detector |
Lateral detectors in SEM |
| Contrast dependence on detector position |
Backscattered electron detector |
| Secondary electron emission (SEE) & generation by incident electrons |
|
| Linearization of voltage contrast in SEM |
|
| SE yield (emission coefficient) in EMs |
Dependence of emission coefficient of secondary electrons on Z |
| Constant-loss approximation on process of secondary electron generation |
Emission depth of secondary electrons |
| Mechanisms and processes of secondary electron generation and SE imaging |
Responding time of SE emission after electron irradiation |
| Source of secondary electrons in SEM |
Full width at half maximum (FWHM) of emitted SE distribution |
| Energy & most probable energy (MPE) of secondary electron emission |
Contrast affected by accelerating voltage in SEM |
| Secondary electron emission by ion irradiation |
| Secondary electron emission from surfaces by ion milling and its angular dependence |
| Secondary ion mass spectrometry (SIMS) |
| Detection limits of SIMS |
Comparison between various SIMS |
| Comparison between XPS and various SIMS |
SIMS application of IC failure analysis |
| Comparison among TEM, APT, ToF SIMS and ICP-MS |
| Ionic sputtering yield in FIB & SIMS |
Lateral ranges of probe ions in FIB and SIMS |
| Seignette salt/Rochelle salt (NaKC4H4O6•4H2O) |
Secondary X-ray (fluorescence) in EDS measurements |
| Sector magnet spectrometer |
SEE (secondary electron emission) |
| Seebeck effect imaging (laser) |
SE3 (third type of secondary electrons) in SEM |
| Segmental Ronchigram autocorrelation function matrix (SRAM) for aberration correction |
| Segregations |
| Investigation and quantification of elemental segregation at interface |
Measurement of elemental segregation at grain boundaries |
| Selected-area electron diffraction (SAED) |
| Comparison between CBED and SAD (selected area diffraction) |
Selected area diffraction (SAD) aperture |
| Indexing SAD (selected area diffraction) patterns |
| Selenium (Se) |
| A1-pCr2Se4-p (A = Ba, Sr, Eu, Pb) |
Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
| MgSe |
ZnSe |
| CdSe |
Cu2ZnSnSe4 |
| Self-absorption of outgoing X-ray in EDS measurements |
| Semiconductors |
| Semiconductor device performances |
Compound semiconductor |
| Nitride semiconductors |
Semiconductor detectors |
| TEM specimen requirements in semiconductor industry |
International technology roadmap for semiconductors |
| Schottky barrier heights |
Properties of semiconductor materials |
| Etchants used in semiconductor manufacturing |
Microwave semiconductor devices |
|
| Sense vector |
| Sensitivity in EMs |
| Sensitivity/minimum detectable mass of EELS |
Sensitivity/minimum detectable mass of EDS |
| Identification of soft failure and non visible defects in ICs |
Sensitivity of thermal laser stimulation methods in EFA |
| Sensors |
| Electronic optical imaging sensors/Image sensors |
CMOS Monolithic Active Pixel Sensors (MAPS) direct electron detectors |
| Separating BSEs from SEs in SEM |
Serial EELS spectrometer |
| Service and sales of EM systems |
Purchase/buy/sale/service of TEM systems and acceptance specifications of new systems |
| Sextupole/hexapole |
|
| Seven crystal families |
| Triclinic crystals |
Monoclinic crystal systems |
| Orthorhombic lattices |
Tetragonal crystal |
| Trigonal crystals (Rhombohedral crystals) |
Hexagonal crystal systems |
| Cubic crystals |
| Seven crystal families (others) |
| Matrix of the seven crystal families in real and reciprocal spaces |
Symmetry groups for the crystal systems |
| Interfacial angles of crystals of the seven crystal families |
Spacing of lattice of the seven crystal families |
| Shadowing contrast in SEM |
Shadow image/Ronchigram/microdiffraction pattern/Azimuthal and radial circles in STEM |
| Shallow trench isolation (STI) failure mechanisms of CMOS |
| Shape |
| Shape of electron diffraction spots |
Shape memory alloys |
| Shape of ionization edge/core-loss edge in EELS |
Shape of X-ray peak in EDS measurements |
| Sharpen filter in image processing |
| Sharpness |
| Topographic contrast (sharpness) depending on beam energy in SEM |
Topographic contrast (sharpness) affected by the detector position in SEM |
| Shear stress |
| Screw dislocation formation due to shear stress |
| Shifts |
Correction of zero-loss shift
in EELS |
Chemical shift due to molecule formation |
| Tilt & shift and their purities/pivot point/rocking point in TEM |
TEM specimen traverse induced by specimen tilting |
| Shift of HOLZ patterns relative to ZOLZ patterns |
Gun-alignment coil control system/gun shift and tilt in EMs |
| Shift of probe in TEM system when switching different modes |
Phase shift from defocus and spherical aberration |
| Probe shift in TEM system when switching between STEM and other modes |
Shift of electron beam |
| Electron-beam-tilt-induced image displacement in TEM |
Electron-beam-tilt-induced coma in TEM |
| Chemical shift detection of elements by EDS |
Peak position shift in EDS |
| EEL spectra/image shift on camera caused by magnetic objects |
Chemical shift detection of elements by EELS and EFTEM |
| Shipping |
| IC failure induced during wafer packaging and shipping |
| Short circuit failure in ICs |
| Thermodynamic stability of metal gate oxides in ICs |
Short circuit failure due to electromigration |
| Short failure in IC devices detected by passive voltage contrast (PVC) |
| Short range ordering (SRO) in materials |
| Analysis of short-range properties of materials |
Icosahedral short-range ordering |
| Study of short range order (SRO) by EXELFS |
HRTEM images of atomic short-range ordering in crystals |
| TEM sample preparation for atomic short-range ordering analysis |
Free volume in metallic glasses |
| Sample preparation for tomography in TEM |
|
| TEM analysis of short range ordering in amorphous materials |
fcc-type packing short range ordering of metallic glass |
| Short-range-orderings dependence on coordination number in metallic glasses |
bcc-type packing short range ordering of metallic glasses |
| bct-type packing short range ordering of metallic glasses |
Pair Distribution Function (PDF) analysis |
| Shoulder structure in EELS profiles |
|
Shuffle transformation
|
| Shutters in TEM system |
| Electrostatic shutter in EMs |
Shutter used in EELS and EFTEM measurements |
| Side-entry and top-entry lens in TEM systems |
Side-entry goniometer stages/holders in TEMs/STEMs |
| Side wall in integrated circuits (IC) |
Sidewall implantation in TEM sample preparation with FIB |
| Sigma (σ) bond |
| Signals |
| Signal-to-noise ratio increased by binning in CCD cameras |
Signal-to-noise ratio (SNR) in the EELS spectrum |
| Dependence of signal types on sample thickness in EMs |
Signal-to-noise ratio in TEM/STEM images |
| Silicon (Si) |
| EDS/x-rays of silicon (Si) |
EELS measurement of silicon |
| (HAADF) STEM images of silicon (Si) |
Single crystalline silicon |
| Polycrystalline silicon |
Amorphous silicon |
| Atomic-number contrast of silicon ions in ADF-STEM images |
Silicon (Si) alloying anodes in lithium batteries |
| Diffraction patterns & crystallography of silicon (Si) |
Silicon oils from diffusion pump |
| EM analysis of silicon |
Solid solubility of various impurities in silicon |
| Stacking faults, twins and dislocations in silicon |
Si-X phase diagrams |
| Extinctions and weak spots showing in electron diffraction patterns of silicon |
Doped crystalline and amorphous Si (e.g. arsenic, boron, phosphorus doped) |
| Lithium-drifted silicon diodes & Si(Li) EDS detectors |
Ionization energy/dopant energy levels of impurities in Si |
| Silicon nitride (SiNx) support/container for EM analysis |
Thermal oxidation of silicon |
| Silicon/nitrogen implantation application to suppress IC failure |
Silicon dust contamination in IC devices |
| Ammonium fluorosilicate [(NH4)2SiF6] |
Si Kikuchi pattern & strain measurement |
| Local oxidation of silicon (LOCOS) |
Si-based metallic-glass alloys |
| Silicon drift EDS detectors |
| Comparison of various X-ray spectrometers |
Development history of silicon drift detectors |
| Silicides, silicon-related materials, silicidation |
Silicide stringers |
| SiGe and SiGe/Si system & its defects |
WSix |
| Silicide stringers |
|
| TaSiNx |
Polycrystalline silicon in solar cells |
| SiC (silicon carbide): 6H-, 4H- and 3C-(β-)SiC |
Electron microscopy analysis of SiC (silicon carbide) materials |
| EM sample preparation of SiC (Silicon Carbide) materials |
|
| Silicide processes |
|
| Copper (Cu) with dielectric diffusion barrier SiCxNy |
TiSix |
| Cu/TiN/TiSi2/Si contacts |
PtSi in ICs |
| HfSiO4 |
Copper silicide |
| Silicon nitride (Si3N4 & SixNy) |
Cobalt disilicide (CoSi2) and cobalt silicide (CoSi) |
| Ca3Al2Si3O12 |
Nickel silicide (Ni2Si/NiSi/NiSi2) |
| SiSn |
|
| Electrical properties of silicides |
Mechanical properties of silicides |
| Optical properties of silicides |
Thermal properties of silicides |
| Chemical properties of silicides |
Stress distribution around silicides |
| Structures of silicides |
| Silicon dioxide/silica glass (SiO2) |
| Silicon dioxide/quartz/SiO2 analysis by EM-related techniques |
SiO2 application in ICs |
| SEM observation related to SiO2 |
| Silver (Ag) |
| EDS measurement of silver (Ag) |
EELS measurement of silver (Ag) |
| Sputtering/etching of silver from electron irradiation in EMs |
| Silver in ICs |
Phase diagram of silver-X |
| Ag-based metallic-glass alloys |
| SIMS (secondary ion mass spectrometry) |
Simple cubic crystals |
| Simulation/modeling |
| Models for simulation in EM techniques |
| Simulation of electron optics |
EM image simulations at high spatial resolutions |
| Software and program examples for EM-related simulation and analysis |
Stobbs factor in TEM imaging |
| iFast (Integrated Fast Automation Software Technology) |
|
| Simulation of ADF(HAADF)-STEM images |
Lenz model for elastic scattering distribution simulation |
| Four-dimensional scanning transmission electron microscopy (4D STEM) |
Four-dimensional (4D) STEM-diffraction |
| Simulation: TEM modeling |
| Multislice simulation (MS) of TEM images |
Bloch wave approaches for simulating TEM images |
| Simultaneous EELS and EDS acquisition |
| Single atom |
| Single atom detection of EELS |
Energy level diagrams for single atoms, dimers, clusters & bulk materials |
| Single scattering of electrons/single-electron excitation |
| Single scattering distribution (SSD) & EELS deconvolution |
| Slits in EELS spectrometer and energy filters |
| Spatial resolution of EFTEM mapping affected by energy range |
| Single particle analysis in TEM tomography |
| Six-fold axis in crystals |
Sixfold symmetries in EMs |
| Size |
| Dimension/size of EMs |
Size of EDS detector in EMs |
| Size of aperture |
Dependence of electron probe/beam current on probe size in EMs |
| Slip/glide planes and slip/glide directions |
Slow scan charge-coupled device (SSCCD) camera |
| Small circles in Wulff Net |
Small electron source |
| Smallest structures obtained by dual beam SEM/FIB/STEM deposition |
Smearing/blooming in CCD |
| Smoothing filters |
Snorkel objective lens in some SEM systems |
| Sodium (Na) |
| NaCl & sodium chloride structures |
| NaNbO3 |
Seignette salt/Rochelle salt (NaKC4H4O6•4H2O) |
|
| Sobel edge filter (operator) |
Soft failure: Identification of soft failure and non visible defects in ICs |
| Soft collision between charged particle and atom |
Soft X-rays |
| Software |
| Software for EDS spectrum acquisition and analysis |
NSS EDS software |
| Software for video recording on EMs |
Software programs for TEM holography |
| Solar cells |
| Polycrystalline silicon in solar cells |
Best research-cell efficiencies for solar cells |
|
| Solenoids |
| Solid angle |
| Angular distribution/emission angle of secondary electron in SEM |
Solid angle of electron source (in electron gun) |
| Solid angle of secondary electron detection in SEM |
Collection angle/solid angle of EDS detector |
| Distance effect on solid angle of EDS detector |
| Solid Oxide Fuel Cells (SOFCs) |
| Materials for solid oxide fuel cells (SOFCs) |
Carbon deposition/contamination in SOFCs |
Solid immersion lens in thermal laser stimulation techniques
|
Source of backscattering electrons in SEM |
| Solid state detectors (SSDs) for EDS |
Source of secondary electrons in SEM |
| Solubility |
| Nitrogen solubility in materials |
Solid solubility of various impurities in silicon |
| Solid solubility of various impurities in germanium |
Solid solubility of various impurities in carbon/diamond |
| sp2 hybridization |
sp3 hybridization |
| Space-charge |
| Space-charge effect in electron beam |
Spacecraft charging |
| Space group: Introduction |
| Crystallographic space group notations/description |
| Unit cell |
Centering translations |
| Point group |
Translational symmetries |
| Determination of space group |
Patterson space group |
| d-spacing ratios of allowed Bragg reflections for some space groups |
Space group/crystal structure depending on substitution concentration |
| Crystal structure & space group of compounds |
Centrosymmetric space groups |
| Non-centrosymmetric space groups |
Chiral space groups |
| Equivocal space groups |
Unequivocal space groups |
| 230 space groups in seven crystal families |
| A-centered lattices/A-centering & its space groups (only one crystal family) |
| Orthorhombic |
| 38: C2v14: Amm2, Am2m, Anc21, Bmm2, B2mm, Cm2m, C2mm |
39:
C2v15: Abm2, Ab2m,
Acc21,
Bma2,
B2am,
Cm2a,
C2ma,
C2mb |
| 40: C2v16: Ama2, Am2a, Ann21, Bbm2, B2mb, Cc2m, C2cm |
41: C2v17: Aba2, Ab2a, Acn21, Ac2a, Bba2, B2ab, Cc2a, Cc2b, C2ca, C2cb |
| 36: A21am, Cmc21, A21ma, Bb21m, Bm21b, Cbn21, Ccm21 |
| C-centered lattices/C-centering & their space groups (only two crystal families) |
| Monoclinic |
| 5: C23: C2, A112, A2, B112, F2, I2, I21 |
8: Cs3: Cm, Am, Im |
| 9: Cs4: Cc, Aa, An, A11a, B11b, Cn, Fd11, Ia, Ic |
12: C2h3: C2/m, A112/m, A2/m, B112/m, C2/a, C2/m11, F2/m, I112/m, I2/m |
| 15: C2h6: A2/a, C2/c , A112/a, A2/n, B1121/b, B112/b, B112/n, C2/c11, C2/n, F2/d, I112/a, I112/b, I2/a, I2/c, I2/n, I21/a, I21/c |
| Orthorhombic |
| 20: D25: C2221, A2122, B2212, C212121 |
21: D26: C222, A222, B222, C21212 |
| 35: C2v11: Cmm2, A2mm, Bm2m, Cba2 |
36: C2v12: Cmc21, A21am |
| 37: C2v13: Ccc2, A2aa, Bb2b, Cnn2 |
63: D2h17: Cmcm, Amam, Amma, Bbmm, Bmmb, Cbnn, Ccmm |
| 64: D2h18: Cmca, Abma, Bmab, Abam, Acam, Bbam, Bbcm, Cbnb, Ccma, Ccmb |
65: D2h19: Cmmm, Ammm, Bmmm, Cban |
| 66: D2h20: Cccm, Amaa, Bbmb, Cnnn |
67: D2h21: Cmma, Abmm, Bmam, Cbab |
| 68: D2h22: Ccca, Abaa, Bbab, Cnnb |
| F-centered lattices/F-centering & their space groups (only two crystal families) |
| Orthorhombic |
| 22: D27: F222, F212121 |
42: C2v18: Fmm2, Fbc21, Fca21, Fm2m, Fnn2, F2mm |
| 43: C2v19: Fdd2, Fdd21, Fd2d, F2dd |
69: D2h23: Fmmm, Fbca, Fcab, Fnnn |
| 70: D2h24: Fddd |
| Cubic |
| 196: T2: F23 |
202: Th3: Fm-3, Fm3 |
| 203: Th4: Fd-3, Fd3 |
209: O3: F432 |
| 210: O4: F4132 |
216: Td2: F4-3m, F-43m |
| 219: Td5: F-43c |
225: Oh5: Fm-3m, Fm3m |
| 226: Oh6: Fm-3c, Fm3c |
227: Oh7: Fd-3m, Fd3m |
| 228: Oh8: Fd-3c, Fd3c |
| I (body-centered) lattices/I-centering & their space groups (only three crystal families) |
| Orthorhombic |
| 23: D28: I222 |
24: D29: I212121 |
| 44: C2v20: Imm2, Im2m, Inn21, I2mm |
45: C2v21: Iba2, Ib2a, Icc21, Ic2a, I2aa, I2cb |
| 46: C2v22: Ima2, Ibm2, Ib2m, Im2a, Inc21, I2am, I2cm, I2ma, Pn2a |
71: D2h25: Immm, Innn |
| 72: D2h26: Ibam, Ibma, Iccn, Imaa, Imcb |
73: D2h27: Ibca, Icab |
| 74: D2h28: Imma, Ibmm, Imam, Imcm, Innb |
| Tetragonal |
| 79: C45: I4 |
80: C46: I41 |
| 82: S42: I-4 |
87: C4h5: I4/m |
| 88: C4h6: I41/a |
97: D49: I422 |
| 98: D410: I4122 |
107: C4v9: I4mm |
| 108: C4v10: I4cm |
109: C4v11: I41md |
| 110: C4v12: I41cd |
119: D2d9: I-4m2 |
| 120: D2d10: I-4c2 |
121: D2d11: I-42m |
| 122: D2d12: I-42d |
139: D4h17: I4/mmm |
| 140: D4h18: I4/mcm |
141: D4h19: I41/amd |
| 142: D4h20: I41/acd |
| Cubic |
| 197: T3: I23 |
199: T5: I213 |
| 204: Th5: Im-3, Im3 |
206: Th7: Ia-3, Ia3 |
| 211: O5: I432 |
214: O8: I4132 |
| 217: Td3: I-43m |
220: Td6: I-43d |
| 229: Oh9: Im-3m, Im3m |
230: Oh10: Ia-3d, Ia3d |
| P (primitive) lattices & their space groups (all the seven crystal families) |
| Triclinic |
| 1 : C11: P1, C1, I1 |
2: Ci1: P-1, A-1, B-1, C-1, F-1, I-1 |
| Monoclinic |
| 3: C21: P2, P112 |
4: C22: P21, B21, C1121, P1121, P2111 |
| 6: Cs1: Pm |
7: Cs2: Pc, Bd, C11a, Pa, Pn, P11b, P11n |
| 10: C2h1: P2/m |
11: C2h2: P21/m, B21/m, P1121/m |
| 13: C2h4: P2/c, C112/b, P112/a, P112/b, P112/n, P2/a, P2/c11, P2/n |
14: C2h5: P21/c, B21/a, B21/c, B21/d, P1121/a, P1121/b, P1121/n, P21/a, P21/b11, P21/c11, P21/n, P21/n11 |
| Orthorhombic |
| 16: D21: P222 |
17: D22: P2221, P2122, P2212 |
| 18: D23: P21212, P21221, P22121 |
19: D24: P212121 |
| 25: C2v1: Pmm2, Pm2m, P2mm |
26: C2v2: Pmc21, Pb21m, Pcm21, Pm21b, P21am, P21ma |
| 27: C2v3: Pcc2, Pb2b, P2aa |
28: C2v4: Pma2, Pbm2, Pc2m, Pm2a, P2cm, P2mb |
| 29: C2v5: Pca21, Pbc21, P21ab, Pb21a, Pc21b, P21ca |
30: C2v6: Pnc2, Pb2n, Pcn2, Pn2b, P2an, P2na |
| 31: C2v7: Pmn21, Pm21n, Pnm21, Pn21m, P21mn, P21nm |
32: C2v8: Pba2, Pc2a, P2cb |
| 33: C2v9: Pna21, P21cn, Pbn21, Pc21n, Pn21a, P21nb |
34: C2v10: Pnn2, Pn2n, P2nn |
| 47: D2h1: Pmmm |
48: D2h2: Pnnn |
| 49: D2h3: Pccm, Pbmb, Pmaa |
50: D2h4: Pban, Pcna, Pncb |
| 51: D2h5: Pmma, Pbmm, Pcmm, Pmam, Pmcm, Pmmb |
52: D2h6: Pnna, Pbnn, Pcnn, Pnan, Pncn, Pnnb |
| 53: D2h7: Pmna, Pbmn, Pcnm, Pman, Pncm, Pnmb |
54: D2h8: Pcca, Pbaa, Pbab, Pbcb, Pcaa, Pccb |
| 55: D2h9: Pbam, Pcma, Pmcb |
56: D2h10: Pccn, Pbnb, Pnaa |
| 57: D2h11: Pbcm, Pbma, Pcam, Pcmb, Pmab, Pmca |
58: D2h12: Pnnm, Pmnn, Pnmn |
| 59: D2h13: Pmmn, Pmnm, Pnmm |
60: D2h14: Pbcn, Pbna, Pcan, Pcnb, Pnab, Pnca |
| 61: D2h15: Pbca, Pcab |
62: D2h16: Pnma, Pbnm, Pcmn, Pmcn, Pmnb, Pnam |
| Tetragonal |
| 75: C41: P4 |
76: C42: P41 |
| 77: C43: P42 |
78: C44: P43 |
| 81: S41: P-4 |
83: C4h1: P4/m |
| 84: C4h2: P42/m |
85: C4h3: P4/n |
| 86: C4h4: P42/n |
89: D41: P422 |
| 90: D42: P4212 |
91: D43: P4122 |
| 92: D44: P41212, C41221 |
93: D45: P4222 |
| 94: D46: P42212 |
95: D47: P4322 |
| 96: D48: P43212 |
99: C4v1: P4mm |
| 100: C4v2: P4bm |
101: C4v3: P42cm |
| 102: C4v4: P42nm |
103: C4v5: P4cc |
| 104: C4v6: P4nc |
105: C4v7: P42mc |
| 106: C4v8: P42bc |
111: D2d1: P-42m |
| 112: D2d2: P-42c |
113: D2d3: P-421m |
| 114: D2d4: P-421c |
115: D2d5: P-4m2 |
| 116: D2d6: P-4c2 |
117: D2d7: P-4b2 |
| 118: D2d8: P-4n2 |
123: D4h1: P4/mmm |
| 124: D4h2: P4/mcc |
125: D4h3: P4/nbm |
| 126: D4h4: P4/nnc |
127: D4h5: P4/mbm, C4/mmb |
| 128: D4h6: P4/mnc |
129: D4h7: P4/nmm |
| 130: D4h8: P4/ncc |
131: D4h9: P42/mmc |
| 132: D4h10: P42/mcm |
133: D4h11: P42/nbc |
| 134: D4h12: P42/nnm |
135: D4h13: P42/mbc |
| 136: D4h14: P42/mnm |
137: D4h15: P42/nmc |
| 138: D4h16: P42/ncm |
| Trigonal |
| 143: C31: P3 |
144: C32: P31 |
| 145: C33: P32 |
147: C3i1: P-3 |
| 149: D31: P312 |
150: D32: P321 |
| 151: D33: P3112 |
152: D34: P3121 |
| 153: D35: P3212 |
154: D36: P3221 |
| 156: C3v1: P3m1 |
157: C3v2: P31m |
| 158: C3v3: P3c1 |
159: C3v4: P31c |
| 162: D3d1: P-31m |
163: D3d2: P-31c |
| 164: D3d3: P-3m1 |
165: D3d4: P-3c1 |
| Hexagonal |
| 168: C61: P6 |
169: C62: P61 |
| 170: C63: P65 |
171: C64: P62 |
| 172: C65: P64 |
173: C66: P63 |
| 174: C3h1: P-6 |
175: C6h1: P6/m |
| 176: C6h2: P63/m |
177: D61: P622 |
| 178: D62: P6122 |
179: D63: P6522 |
| 180: D64: P6222 |
181: D65: P6422 |
| 182: D66: P6322 |
183: C6v1: P6mm |
| 184: C6v2: P6cc |
185: C6v3: P63cm |
| 186: C6v4: P63mc |
187: D3h1: P-6m2 |
| 188: D3h2: P-6c2 |
189: D3h3: P-62m |
| 190: D3h4: P-62c |
191: D6h1: P6/mmm |
| 192: D6h2: P6/mcc |
193: D6h3: P63/mcm |
| 194: D6h4: P63/mmc |
P6m2 |
| Cubic |
| 195: T1: P23 |
198: T4: P213 |
| 200: Th1: Pm-3 |
201: Th2: Pn-3 |
| 205: Th6: Pa-3, Pa3, Pb3 |
207: O1: P432 |
| 208: O2: P4232 |
212: O6: P4332 |
| 213: O7: P4132 |
215: Td1: P-43m |
| 218: Td4: P-43n |
221: Oh1: Pm-3m |
| 222: Oh2: Pn-3n |
223: Oh3: Pm-3n |
| 224: Oh4: Pn-3m |
| R-centered lattices/R-centering & its space groups (only one crystal family) |
| Trigonal |
| 146: C34: R3, R3r |
148: C3i2: R-3, R-3r |
| 155: D37: R32, R32r |
160: C3v5: R3m, R3mr |
| 161: C3v6: R3c, R3cr |
166: D3d5: R-3m, R-3mr |
| 167: D3d6: R-3c, R-3cr |
| Others |
| P105/mmc |
Pm-35 |
| Fm-35 |
| Space groups that have not been completely determined |
| Spacers in MOSFET structures |
| Spacing |
| Reciprocal lattice spacings |
Real crystal spacings |
| Spacing of lattice of the seven crystal families |
| Spatial coherence/incoherence in EMs |
| Spatial coherence/incoherence of electron source |
Contribution of partial spatial coherence to diffractograms |
| Spatial coherence envelopes |
| Spatial frequency/spatial object frequency in EM imaging |
| Spatial frequency and its band in TEM imaging |
Spatial frequencies in STEM imaging |
| Spatial drift & its correction in EFTEM imagings |
EEL spectrum energy (and zero-loss) drifts/shifts |
| Spatial resolution |
| EDS spatial resolution depending on EM sample thickness |
EELS spatial resolution depending on specimen thickness |
| Spatial resolution of camera |
| Rayleigh criterion |
Spatial resolution of EELS and EFTEM measurements |
| Spatial resolutions between various techniques |
Spatial resolution of EELS in STEM mode |
| Spatial resolution of inelastic signals |
Resolution in electron tomography |
| Resolution of cathodoluminescence technique |
Degradation of EELS spatial resolution due to specimen drift |
| Spatial resolution of electron microscopes |
|
| Diffractogram vs spatial resolution |
Spatial resolution of EFTEM |
| Point resolution in EMs |
Effect of chromatic aberration on spatial resolution in EMs |
| Spatial resolution of SEM |
Spatial resolution of microscopes |
| Spatial resolution for light microscopes |
Spatial resolution in EDS technique |
| Spatial resolution of STEM |
Evaluation of spatial resolution in EMs |
| Corrections of Spatial Drift between Successive Acquisitions in 4D STEM Measurements |
|
| EM sample thickness dependence of spatial resolution |
Methods for improving spatial resolution in EMs |
| Spatial resolution improved by increasing accelerating voltage in EMs |
EM image simulations at high spatial resolutions |
| Spatial resolutions limited by specimen drifts |
Spatial resolution of EFTEM mapping affected by chromatic aberration |
| Spatial resolution of EFTEM mapping affected by energy range |
Spatial resolution of EFTEM mapping affected by collection angle |
| Spatial resolution of EBSD |
Spatial resolution/beam spreading in STEM depending on convergence semiangle |
| Spatial resolution/resolving power affected by beam alignments |
Spatial resolution affected by objective astigmatism |
| Effects of illumination coherence on spatial resolution in TEMs |
Resolution of FIB milling |
| Spatial resolution in CBED measurements |
| Spatial resolution limits of EMs |
| Spatial resolution limit affected by aberrations |
Scherzer expression/resolution/limit |
| Factors limiting spatial resolution on TEM |
Resolution limit due to spherical aberration (Cs) |
| Resolution limit due to chromatic aberration (Cc) |
Resolution limit of electron microscopes |
| Surpassing the resolution limit of EMs |
Abbe's equation: resolution limit of microscopes |
| Spatial Resolution of TEM/HRTEM |
| Determination of TEM spatial resolution |
Effect of configuration of objective polepieces on STEM/TEM spatial resolution |
| Methods for improving spatial resolution in EMs |
Spatial resolution improved by increasing accelerating voltage in EMs |
| Spatial resolution of TEM measured by Young’s fringe |
Improvement of spatial resolution using aberration correction in EMs |
| TEM spatial resolution improved by defocus series |
Improvement of TEM spatial resolution by image series reconstructions |
| EM image simulations at high spatial resolutions |
Spatial resolution of electron holography |
| Spatially resolved EELS (SREELS) |
Specific heat and heat capacity of materials |
| Specifications of EMs |
| Examples of FIB specifications |
| Specimen drift in TEM observations |
| Spatial drift correction in EFTEM imagings |
| Spectrum-imaging (SI) based on EELS by STEM |
Spectroscopic amplifier in EDS system |
| Spectrometers |
| Comparison of electron optics of various filters & spectrometers |
Serial EELS spectrometer |
| In-column energy filters & spectrometers |
Post-column energy filters & spectrometers |
| SIMS (secondary ion mass spectrometry) |
Periodic table for EDS and EELS analysis |
| Speed considerations in EM analyses |
Speed and time related to electron microscopy and materials |
| Spherical aberration |
| Spherical aberration depending on working distance in SEM |
Resolution limit due to spherical aberration (Cs) |
| Spherical aberration coefficient (Cs) |
Benefit of low spherical aberration of objective lens |
| Determination of the spherical aberration and its coefficients |
Phase shift from defocus and spherical aberration |
| Dependence of Cs and Cc aberrations on accelerating voltage of beam |
Negative spherical aberrations |
| Longitudinal spherical aberration |
Transverse spherical aberration |
| Spherical aberration affected by beam alignments |
Spherical aberration in STEM |
| Spatial resolution of EFTEM mapping affected by spherical aberration |
Spherical aberration rings in Ronchigram |
| Spherical aberration corrections |
| Cs correction in SEM |
Cs correction in TEM |
| Probe-forming Cs-corrector in STEM |
Image-forming Cs-corrector |
| Interaction between chromatic and spherical aberration corrections |
Ronchigram comparison between Cs-corrected and uncorrected STEM conditions |
| Third-order spherical aberration correction |
Coupling between aberration corrector and objective lens |
| Spherical aberration corrector |
| Multipole design for Cs correctors in EMs |
Hexapole/sextupole/dodecapole design for Cs corrector in EMs |
|
Dipole design for Cs corrector in EMs |
Quadrupole design for Cs corrector in EMs |
| Octupole design for Cs corrector in EMs |
| Spin |
| Melt-spinning |
| Spinel (MgAl2O4) structures |
| Spherical projection |
Spiking/bridging failure in ICs |
| Splitting |
| Phase-induced splitting of reflections in electron diffraction patterns |
Splitting of HOLZ lines in CBED patterns |
| Spontaneous polarization in ferroelectrics |
| Direction of spontaneous polarization in ferroelectrics |
Polarization in ferroelectrics measured by CBED in STEM mode |
| Spot size of electron beam |
| Evaluation of probe size in EMs |
Dependence of electron probe/beam current on probe size in EMs |
| Spot size and shape limited by aberrations |
| Spray & beam defining apertures in FIB |
Spot mask annotation on Gatan DigitalMicrograph |
| Spread of the kinetic electron energy |
Spreading |
| Sputter ion pump (SIP) |
| Spurious |
| Spurious/artifacts x-rays in EDS measurements |
Inaccuracy/artifacts in electron diffraction and spurious intensities |
| Sputtering |
| Evaluation of sputtering cross section |
Dependence of ionic sputtering on ionic energy |
| Ionic sputtering in FIB |
Sputtering/etching threshold energies by energetic electron & ion beams |
| Introduction of ionic sputtering yields (in FIB & SIMS) |
| Sputtering damage in EMs |
| Sputtering & its yield of materials in electron microscopes |
Preferential electron-beam etching of grain boundaries |
| Coating of TEM specimen to reduce beam damage & sputtering |
Cross-sections of surface sputtering/knock-on induced by electron irradiation (sputtering cross section) |
| Sputtering/knock-on of atoms from beam-exit surface of TEM sample |
Atom loss during EM measurements |
| Square |
| Square symmetry in electron diffraction patterns |
| Stability |
| Energy stability of EELS |
Electrical stability of EM systems |
| Instability in accelerating voltage of electron beam |
Instability of TEM imaging due to specimen charging |
| Stability of ferroelectrics related to oxygen vacancies |
| Stacking fault |
| TEM imaging of stacking faults |
Stacking fault energy of crystals |
| Determination of displacement vector of stacking fault |
Visibility/contrast of dislocations and stacking faults in TEM and EMs |
| Stacking faults, twins and dislocations in silicon |
| Stacking fault energy of crystals |
Standard deviation of the Gaussian distribution of defocus due to the chromatic aberration |
| Standard focus/Eucentric height versus sample tilt in TEM |
Standby power for mobile devices |
| Staining/dopant-selective etching in IC analysis |
Staining in analysis of biological materials |
| Static dielectric constants |
| Static random-access memory (SRAM) |
| Failure of static random-access memory (SRAM) |
|
| Steels |
| STEM (scanning transmission electron microscope) system |
| Four-dimensional (4D) STEM-EELS |
Practical beam current of STEM technique in TEM |
| Analytical electron microscopy (STEM/TEM) |
Examples of SEM/STEM systems |
| Imaging geometries of TEM and STEM systems |
Tilt HAAD STEM tomography |
| Three-dimensional sectioning of specimens using STEM |
X-ray detector & EDS comparison in SEM/TEM/STEM |
| Defect analysis by TEM/STEM |
Interface analysis by TEM/STEM |
| Low dose TEM/STEM imaging |
Examples of TEM/STEM systems |
| STEM mode |
| Aberration and its correction in STEM mode |
Cs correction in STEM |
| Comparison between CTEM and STEM |
Spherical aberration in STEM |
| Beam spreading in STEM caused by chromatic aberration |
Astigmatism in STEMs |
| Virtual objective aperture (VOA) in TEM/STEM |
Objective lens in SEMs/STEMs |
| Optimal convergence semi-angle in STEM |
Measurements of convergence semi-angle in STEM and CBED |
| Spatial resolution/beam spreading in STEM depending on convergence semiangle |
Dependence of electron probe/beam current on probe size in EMs |
| Probe shift in TEM system when switching between STEM and other modes |
Maximum usable illumination angle in STEM |
| STEM alignment with Ronchigram |
STEM imaging affected by accelerating voltage of electron beam |
| Annular dark-field (ADF) scanning transmission electron microscopy (STEM) |
Low-angle annular dark field (LAADF) STEM |
| Defocus series in STEM imaging |
STEM/TEM imaging with incoherent electrons |
| Phase shift of electrons depending on scattering angle in TEM/STEM |
Electronic noise in TEM/STEM/SEM/EELS/EDS systems |
| Image localization in STEM |
Minimum attainable probe size in STEM |
| Theoretical interpretation of STEM/TEM images about crystalline defects |
Theoretical interpretation of STEM/TEM images about crystalline surface |
| In Situ TEM/STEM |
In Situ liquid TEM/STEM analysis |
| In situ FIB lift-out TEM sample preparation |
|
| Liquid TEM and STEM stage and holder |
Polarization in ferroelectrics measured by CBED in STEM mode |
| STEM: Wavefunction & intensity |
| Contrast transfer function (CTF) in STEM |
Sensitivity of STEM contrast to focus |
| Purity of Z-contrast in HAADF-STEM (removing diffraction contrast) |
Intensity/signal comparison between STEM and CTEM |
| Simulation of HAADF-STEM images |
Wavefunction of focused probe in STEM/SEM |
| Wavefunction affected by aberrations in STEM |
Exit wavefunction & intensity from STEM specimen |
| STEM: HRSTEM/high resolution STEM |
| Artifacts in HRSTEM imaging |
Effects of amorphous layer and specimen thickness on high resolution STEM images |
| HRSTEM image contrast as function of crystal tilt |
HRSTEM image contrast as function of defocus |
| STEM operation/acquisition of STEM images |
| Spectrum-imaging (SI) by STEM |
Scan speed/dwell time of detectors and cameras in TEM/STEM imaging and elemental mapping |
| Objective/probe-forming aperture for STEM imaging |
Wobbler for high tension in TEM/STEM |
| Streaking/noise artifact in TEM/STEM images |
Wobbler for condenser lens excitation in TEM/STEM |
| General thickness requirements of TEM samples for EELS/EFTEM/STEM |
STEM image contrast |
| Contrast reversal of bright field TEM/STEM images |
Contrast analysis of HAADF-STEM images |
| HRSTEM image contrast as function of crystal tilt |
HRSTEM image contrast as function of defocus |
| Dependence of BF/ADF-STEM intensity on specimen thickness |
Atomic contrast (Z-contrast) by HAADF |
| ADF(HAADF)-STEM contrast at interfaces |
Contrast reversal in HAADF imaging |
Contrast & intensity in annular dark field (ADF) STEM images
|
Fraction of electrons scattered onto an ADF detector |
STEM data analysis |
| Removal of sample thickness variations in STEM data analysis |
Noise in STEM imaging |
| Comparison between TEM and STEM bright field imagings |
Drawback/disadvantage of STEM imaging |
| Stereographic projection/stereogram |
| Electron stereographic projection/stereogram for crystals |
Relationship between electron diffraction patterns and stereographic projections |
| Wulff net |
Polar net |
| Stereographic projection for cubic crystals |
Angle between two planes/plane normals/poles measured by Wulff net |
| Pole (plane normal) in electron stereographic projection |
| Stigmators/astigmatism |
Sticking coefficient |
| Stock: EM companies in stock markets |
Stobbs factor in TEM imaging |
| Stopping power |
| Electron stopping power |
Collision (ionization) stopping power |
| Mass stopping power |
Radiative stopping power |
| Stopper |
| Beam stopper in TEM |
|
| Storage |
|
| Optical storage |
|
| Void formation by Nabarro–Herring creep |
Stress distribution around silicides |
| Electrons/holes mobility & current versus strain in materials |
Strain in ferroelectric materials |
| Stress/strain fields at interfaces |
|
| Strain/stress analysis with STEM |
Strain/stress analysis with HR-(S)TEM |
| Strain/stress measurement using electron diffraction |
Strain/stress analysis using CBED |
| Strain measurement with (scanning) nanobeam diffraction ((Scanning)-NBD) |
Determination of lattice parameters/strain by plasmon EELS |
| Strain analysis using electron holography |
Strain/stress analysis using EBSD |
| TEM/STEM holders for strain analysis |
Stress-redistribution-induced film bending due to FIB irradiation |
| Stray radiation in EMs |
Stray aperture in EMs |
| Stray magnetic field |
| Fluctuation of stray magnetic fields |
| Streaking |
| Streaking artifacts in EELS images or profiles |
Streak imaging technique in EELS measurements |
| Streaks formed by smearing/blooming in CCD camera |
Streaking artefacts in FFTs of TEM images |
| Streaks in electron diffraction patterns |
Diffuse scattering in electron diffraction due to crystalline disorder |
| Incoherent thermal diffuse scattering (TDS) electrons in (S)TEM |
|
| Streaking artifacts in TIVA and OBIRCH images |
Streaking/noise artifact in TEM/STEM images |
| Strength |
| Strength of lenses in EMs |
Strength of diatomic bond/bond energy |
| Grain boundary strength |
| Strip width in integrated circuits (IC) |
| Strontium |
| EDS measurement of strontium (Sr) |
| Doped and undoped strontium titanate (SrTiO3 ) |
Superlattice of SrTiO3 and LaTiO3 |
| SrZrO3 |
Ca1-xSrxTiO3 |
| Atomic-number contrast of Sr ions |
Sr1-pCr2X4-p (X = S, Se) |
| Stroboscopic scanning electron microscopy (SEM) |
| Structure |
| Table of structural properties of materials |
Structure factor and HRTEM |
| Structure Factor Fhkl |
Structure function and structure factor |
| Strukturbericht |
|
| States |
|
| Delocalized states in materials |
State: Oxidation states (oxidation number, degree of oxidation) in periodic table |
| Substitution |
|
| Space group/crystal structure depending on substitution concentration |
| Substrate |
| Selection of substrate direction for ICs |
| Sum peaks in x-ray/EDS profiles |
| Sulfur (S) |
| EDS/WDS measurements of sulfur (S) |
| La1.2CrS3.2 |
ZnSSe-based/GaAs heterostructures |
| A1-pCr2S4-p (A = Ba, Sr, Eu, Pb) |
Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
| SF6 and its application in EMs |
| Surface |
| Energy of atoms at surface |
Difference of atomic structure between surface, interface, and bulk |
| Surface plasmons formed in thin specimen in EMs |
Surface reconstruction |
| Surface & bulk plasmon energy in EELS (table) |
EELS detection of molecularly adsorbed species on surfaces |
| Surface & bulk plasmon energy in EELS (theory) |
Theoretical interpretation of STEM/TEM images about crystalline surface |
| Number of atoms at surface of and in nanoparticles |
Surface energies of solids |
| Diffusion/diffusivity of elements through surfaces |
(Maximum) escape depth of secondary electrons and its surface sensitivity |
| Surface potential |
| Surface potential at sample surface induced by electron irradiation (e.g. in SEM) |
| Supercells and subcells of crystals |
| Superconductor |
| Superconducting lens for EMs |
Properties of superconductive materials |
| Superlattices |
| Superlattice of SrTiO3 and LaTiO3 |
Twofold superstructure |
| Weak spots related to superstructures in electron diffractions |
| Super pixel/binning/binned pixel in CCD |
Suppressor (of beam) in FIB |
| Switching valves |
Symmetric immersion lens as objective lens in SEM systems |
| Synchrotron X-ray Diffraction |
| Symmetry operations and symmetry elements |
Symmetry groups for the crystal systems
|
Rotation axis (1, 2, 3, 4 and 6 (Cn)) in crystallography |
| Determination of crystal symmetry |
CBED pattern symmetries for crystal determination |
| 2mm symmetry |
4mm symmetry in electron diffraction patterns |
| 8mm symmetry |
12mm symmetry |
| Center of inversion (center of symmetry, i) |
| Non-centrosymmetric space groups |
Centrosymmetric space groups |
| Symmetry: Three symmetry elements for point group definition |
| Mirror planes (m, σ) in crystallography |
Rotation axis (1, 2, 3, 4 and 6 (Cn)) in crystallography |
| Rotoinversion axis (-4, S4) in crystallography |
