Ionic Sputtering in FIB
- Practical Electron Microscopy and Database -
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FIB sputtering is a pure physical collision process between ions and substrate. It works with low ion energies (e.g. ≤50 keV) because the effect of implantation in FIB should be as little as possible.

Figure 2483a shows that the possible ion beam - matter interactions induce particle sputtering from a solid surface. Secondary electrons may be also a product of the interactions. The ion will eventually come to rest and be implanted within the target at some depth below the sample surface if the ion is not backscattered out of the target surface. Note that the response of a given target material to the ion beam depends strongly on many factors such as beam current, incident ion energy, trench/feature geometry, raster pattern, and milling angle.

possible ion beam - matter interactions induce particle sputtering from a solid surface

Figure 2483a. The possible ion beam - matter interactions induce particle sputtering from a solid surface.

 

 

 

 

 

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