Table of Contents/Index
Chapter/Index:
Introduction |
A | B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
| A-centered lattices/A-centering & its space groups |
|
| Monoclinic |
| A2/a (C2/c , 15) |
A2/m space group |
| Orthorhombic |
| Amm2 (38) |
Abm2 (39) |
| Ama2 (40) |
Aba2 (41) |
| A21am (Cmc21, 36) |
|
| |
| A-planes of sapphire crystal |
Ab-initio methods used in EELS |
| Abbe's equation: resolution limit of microscopes |
Abma (Cmca, Bmab, 64) space group |
| |
| Aberration coefficients of electron microscopes |
|
| Aberration coefficient C1,2/A1: two-fold axial astigmatism and its corrections in TEMs |
Aberration coefficient C2,1 (B2): axial coma aberration |
| Shape similarity of aberrations in terms of azimuthal symmetry |
Third order aberrations |
| Spherical aberration |
Spot/beam size and shape limited by aberrations |
| Aberrations with four fold symmetry |
Aberrations with two fold symmetry |
| Aberration in EELS imaging |
Off-axis aberrations in EMs |
| |
| Aberration coefficients reflected in Ronchigram |
|
| 4-fold parasitic aberrations shown in Ronchigram after aberration correction |
Segmental Ronchigram autocorrelation function matrix (SRAM) for aberration correction |
| Aberration corrections/alignments/correctors |
| Aberration correction in CTEM |
Aberration correction in STEM |
| Delta-type aberration correctors |
Aberration correction for HAADF imaging |
| Aberration corrections in TEM-EELS system |
Advantages of EMs with aberration correctors |
| Application of aberration corrections |
Improvement of spatial resolution using aberration correction in TEM/STEM |
| Coma aberration correction in EMs |
Spherical aberration correction |
| Fifth-order aberration correction |
Comparison between aberration-corrected and uncorrected EMs |
| Image contrast in aberration-corrected EMs |
Position and length of aberration correctors |
| Manually correctable aberrations |
Beam tilt in aberration corrected TEM |
| Second-order aberration corrections |
Reversing sign of aberrations |
| EELS & EFTEM measurements in aberration corrected TEMs |
Operation of aberration correctors |
| Probe current affected by aberration corrections |
Electron-probe intensity distribution depending on aberrations |
| Zemlin tableaus method |
Applicable larger convergence angle in aberration-corrected EMs |
| Segmental Ronchigram autocorrelation function matrix (SRAM) for aberration correction |
Usage of aberration correctors |
| Correction of electron optical aberrations in EFTEM |
EDS measurements in aberration corrected TEMs |
| Correction of 3rd order star aberration (S3) |
|
| Aberration correction: Indirect aberration corrections |
| Aberration correction using off-axis electron holography technique |
Aberration correction through-focus series reconstruction |
| Aberration determinations |
| Determination of the spherical aberration coefficient |
Aberration determinations by image shift due to tilting illumination |
| Aberration measurement method based on diffractogram |
Aberration coefficients determined by defocus-based techniques |
| Aberration determination by focal sets of Ronchigram |
|
| Aberration of ray |
| Coherent aberrations |
Incoherent aberrations in EMs |
| Aberrations in electromagnetic lenses in EMs |
Aberration & beam spread/convergence |
| Chromatic aberration |
Coma aberration in EMs |
| Focusing properties of electromagnetic lenses affected by aberrations |
Geometric aberration |
| Spherical aberration |
Diffraction & aberration |
| Incoherent aberrations in EMs |
Wave aberration function |
| Aberrations and imaging requirements for small field of view in EMs |
Aberration in well-aligned EMs |
| Aberrations versus working distance in SEMs |
Wavefunction affected by aberrations in CTEM |
| Wavefunction affected by aberrations in STEM |
Shape similarity of aberrations in terms of azimuthal symmetry |
| Aberration dependence of angle of electron rays |
Third order aberrations |
| Parasitic aberrations in multipole corrector optics |
Aberrations and imaging requirements for large field of view in EMs |
| Spatial resolution limit affected by aberrations |
|
| Absorption |
| EELS detection of molecularly adsorbed species on surfaces |
Absorption edge energy |
| Near Edge X-Ray Absorption Fine Structure (NEXAFS) |
X-Ray Absorption Near Edge Structure (XANES) |
| X-ray absorption coefficient of typical materials |
Periodic table of X-ray absorption edges |
| Electron absorption EM specimen (& thickness dependence) |
Fraction of absorbed electrons depending on sample thickness |
| Purchase/buy/sale/service of TEM systems and acceptance specifications of new systems |
|
| Accelerating voltage/tube in EMs and its Best-Known Methods (BKM) |
| Spatial resolution improved by increasing accelerating voltage in EMs |
Dependence of Cs and Cc aberrations on accelerating voltage of beam |
| Dependence of radiation damage on accelerating voltage of electrons |
Dependence of EDS on accelerating voltages of incident electrons |
| Dependence of EELS/EFTEM on accelerating voltages of incident electrons |
SEM spatial resolution affected by accelerating voltage of electron beam |
| Electron backscattering affected by accelerating voltage |
STEM imaging affected by accelerating voltage of electron beam |
| Backscattered electron imaging affected by accelerating voltage of electron beam |
Accelerating voltage dependence of scattering cross-section for ionization |
| Instability in accelerating voltage of electron beam |
Dependence of observable thickness on accelerating voltage in TEM/STEM |
| Dependence of image contrast on accelerating voltage in TEM/STEM |
van de Graaff generators |
| Properties of accelerated electrons |
|
| Accuracies in EM Measurements |
| Accuracy of EDS quantification |
Accuracy of EELS measurement |
| Accuracy of lattice spacing measurements by HRTEM/FFT/electron diffraction |
Accuracy of angle measurement in HRTEM images |
| Accuracy of CD (critical dimension) measurements using TEM |
Improvement of EDS analysis accuracy |
| Accuracy of CBED patterns |
Accuracy of strain measurement by CBED |
| Accuracies of beam tilt & of alignment of zone axis |
|
| ACD (anti-contamination device) |
|
| ACD (anti-contamination device) operation on TEM system |
|
| Adhesion |
| Adhesion between gold and other materials |
|
| Acronyms/abbreviations used in microscopy and materials |
Active voltage contrast (AVC) in FIB and SEM |
| CMOS Monolithic Active Pixel Sensors (MAPS) direct electron detectors |
Hybrid Pixel Array Detector (PAD): A direct electron detector |
| Activation energy of diffusion |
Activation energy for electromigration (EM) |
| Advanced TEM-related measurements semiconductor failure analyses: Challenges/Difficulties |
|
| Advanced/latest transmission electron microscopes (TEMs/STEMs) |
Thin TEM sample to avoid multiple/plural scattering |
| EM improvements for reducing beam damage |
Advanced/atomic/high resolution/latest SEMs |
| Advantages & disadvantages |
| Advantages of EMs with aberration correctors |
Advantages and disadvantages of FIB technology for EM sample preparations |
| Advantages and disadvantages of low-/high-voltage TEM and STEM |
Advantages and disadvantages of TEM-related techniques |
| Air |
| Pressurized air for EM parts |
Airlocks |
| Aircraft and aerospace industry |
|
| Airy disc |
Achromatic configurations/lenses/achromats |
| Achromatic-aplanatic lenses in EMs |
Actuators |
| Achromaticity correction in EFTEM |
Aging in ferroelectrics |
| Agglomerations |
| Agglomeration in titanium silicide films |
|
| Alignment in EMs |
| Gun-alignment/adjustment and its coil control system |
Aberration in well-aligned EMs |
| Alignment of objective lens axis |
Spherical aberration affected by beam alignments |
| Chromatic aberration affected by beam alignments |
Spatial resolution/resolving power affected by beam alignments |
| Beam alignment between condenser and objective lenses |
|
| Alkali metals |
| Alkali metals in Periodic table |
EELS of alkali metals |
| Alkaline hydroxide |
|
| Allowed reflections/diffraction of common crystal structures |
|
| Alloy |
| Electromigration resistance induced by alloying |
Gibbs free energy change due to alloy formation |
| Shape memory alloys |
Alloy liquid metal ion sources for advanced FIBs |
| High entropy alloys (HEAs) |
|
| Aluminum |
| EELS measurement of aluminum |
EDS measurements of Al |
| Aluminides |
| AlGaInP |
AlGaAs |
| AlN |
AlAs |
| AlP |
AlCl3 |
| Al–X phase diagrams |
AlxWy |
| Ca3Al2Si3O12 |
Spinel (MgAl2O4) |
| Carbon-coated aluminum |
Special application of Al material in EM-related devices |
| Aluminum-lithium (Al-Li) based alloys |
EFTEM imaging of aluminum |
| Atomic-number contrast of aluminum ions |
Al/Ti/W/TiN stack used for VLSI |
| LaAlO3 |
Zrx–Nby–Cuz–Nim–Aln alloys |
| Compound semiconductor |
XPS of aluminum and its related materials |
| Aluminum applied in EM systems |
Al-based metallic-glass alloys |
| Alumina (Al2O3) |
| Alpha (α)-alumina |
Gamma (γ)-alumina |
| Aluminum in ICs |
|
| Aluminum alloys for interconnections in ICs |
Al-Cu alloy |
| Amorphous materials |
| Diffractogram intensity of thin amorphous TEM specimen |
Analysis of amorphous materials |
| Thon rings in bright-filed imaging |
Fourier transform and FFT of HRTEM image of amorphous materials |
| Kikuchi pattern contrast of EBSD depending on amorphous layer on surface |
Ronchigrams of amorphous films |
| TEM analysis of defects in amorphous materials |
XRD patterns of amorphous materials |
| TEM analysis of short range ordering in amorphous materials |
HRTEM images & electron diffraction of amorphous metallic glasses |
| Analysis of interatomic spacing of amorphous materials using electron diffraction |
Analysis of free volume of amorphous materials using electron diffraction |
| Free volume change in amorphous materials induced by deformation |
Effect of amorphous layer on contrast of HRSEM images |
| Effects of amorphous layer and specimen thickness on high resolution STEM images |
Crystallization kinetics of amorphous materials |
| Difference of binding energies in amorphous and crystalline phases |
Tetrahedral structure in amorphous materials |
| HAADF-STEM images of amorphous metallic glasses |
Difference between bond lengths of amorphous and crystalline materials |
| Amorphization methods for alloys |
|
| Amorphization of materials due to FIB deposition |
Amorphous layer formed during EM sample preparation using Ar milling |
| Amorphous layer formed during EM sample preparation using FIB |
|
| Amorphous materials: amorphous alloys |
| Amorphous CuxZry alloys |
|
| Ammonium fluorosilicate [(NH4)2SiF6] |
Ampère-Maxwell law |
| Amplify |
| Secondary electron detecting/amplifying system in EMs |
|
| Amplitude & intensity of scattered wave by atoms |
Analog-to-digital (A/D) converter |
| Amplitudes of HRTEM image |
|
| Analytical electron microscopy (STEM/TEM) |
|
| Periodic table for analytical
TEM (EDS/EELS) analysis |
|
| Electron energy-loss spectroscopy (EELS) |
Eenergy dispersive x-ray spectroscopy (EDS) |
| Convergent beam electron diffraction (CBED) |
Cathodoluminescence |
| Auger electron spectroscopy (AES) |
Electron beam induced current (EBIC) |
| Angles |
| Conversion between reciprocal space vector and angle |
Angle between two planes/plane normals/poles measured by Wulff net |
| Angle between normals to planes/in electron diffraction pattern |
Interfacial angles of cubic crystals |
Cell angles in unit cells in crystals
|
TEM experimental determination of lattice parameters |
| Accuracy of angle measurement in HRTEM images |
Angle between directions |
| Angle between polarization vectors of adjacent domains in various crystalline phases in ferroelectrics |
Convergence semi-angle of the ion beam in a FIB system |
| Angles in SEM |
| Angular distribution of secondary electrons |
Angular distribution/emission angle of secondary electron in SEM |
| Angular/polar distribution of X-ray generation in electron microscopy |
|
| Angular |
Transmitted angular-resolved electron scattering distribution
|
Angular spread of incident electrons |
| Angular distribution of signal/information from TEM measurements |
Angular dependence of milling in FIB |
| Angular dependence of elastic scattering of electrons |
Angular dependence of inelastic scattering of electrons |
| Angular distribution of inelastically scattered electrons |
|
| Anode (A1/A2) in electron gun in EMs |
|
| Anode wobbler in TEM |
|
| Anode (negative) & cathode (positive) electrode materials for lithium batteries |
|
| Anisotropy |
| Anisotropy of thermal expansion coefficients due to defects |
Anisotropy of physical and chemical properties of crystals |
| Anisotropic wet-etching |
Anisotropic materials |
| Impact of anisotropy on EELS intensity in anisotropic materials |
|
| Annealing |
| Nitrogen atmosphere for annealing for semiconductors |
Structural relaxation of metallic glasses at elevated temperatures |
| Free volume change of metallic glasses at elevated temperatures |
Defects in crystals formed by ion-implantation and annealing |
| Dependence of crystallized fraction on annealing time and temperature |
|
| Antiferroelectrics & Antiferroelectric materials |
Annular bright-field measurements |
| Comparison between BF (bright field), ADF (annular dark field) and HAADF (high angle annular dark field) STEM images |
|
| Anti-reflective layer in EDS detector |
Antibonding |
| Antimony (Sb) |
| (HAADF) STEM images of antimony (Sb) |
Atomic-number contrast of antimony ions |
| Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
GexSbyTez (GST) |
| Sb-X phase diagrams |
|
| Aperiodic crystals |
Aplanatic lenses/aplanatic points/aplanatic conditions/aplanats |
| Apertures |
| Apertures in GIF camera |
Aperture effect/function of lens |
| First aperture in electron gun for filtering electrons |
Numerical aperture |
| Objective apertures in TEMs |
Condenser aperture in EMs |
| Stray aperture in EMs |
ADF-TEM (annular dark-field transmission electron microscopy) aperture |
| Aperture function |
Selected area diffraction (SAD) aperture |
| Contamination of apertures |
Optimal size of virtual objective apertures in STEM and SEM |
| Differential pumping aperture (DPA) in EMs |
Beam-defining aperture |
| EELS signal/intensity affected by collection & convergence angles & apertures |
Condenser 1 (C1) and condenser 2 (C2) lens/apertures |
| Spray & beam defining apertures in FIB |
Collection angles/apertures of EELS (Basics) |
| Problems/damage of apertures |
High contrast aperture in TEMs |
| Artifacts induced by misalignment of condenser aperture |
|
| Apple products: iPhone, iPad, & iPod touch, Apple watch & MacBook |
Array mask annotation on Gatan DigitalMicrograph |
| Argon (Ar) |
| Argon milling for TEM specimen preparation |
Ultrathin specimen preparation by low-energy Ar-ion milling |
| Argon implantation occurring in TEM sample milling process |
Amorphous layer formed during EM sample preparation using Ar milling |
| "Mottling" visible in FIB- and Ar-milled specimens |
Milling rate of materials with argon ion polishing |
| Comparison between FIB and Ar (argon) ion milling specimen preparations |
Argon ion sputtering yield in milling |
| EDS measurement of Argon (Ar) |
EELS measurement of Argon (Ar) |
| ASIC 1/2 pitch (in ICs) |
|
| Areal Density (atoms per unit area) |
|
| EELS intensity depending on areal density of atoms |
Areal density of atoms measured by EELS intensity |
| Arsenic (As) |
Arrow annotation on DM |
| Arsenides |
AlAs |
| AlGaAs |
GaAs |
| EELS of Arsenic (As) |
InAs |
| Compound semiconductor |
ZnSSe-based/GaAs heterostructures |
| NanoMEGAS systems, Topspin, and ASTAR software package |
|
| Multi beam inspection tool from ASML |
|
| Astigmatism/stigmators in EMs |
| Astigmatism correction coil control system in SEMs |
Condenser stigmators |
| Fifth-order 6-fold astigmatism |
Difference between axial coma and twofold astigmatism |
| Twofold astigmatism |
Fresnel fringes affected by objective astigmatism |
| Determination of threefold astigmatism (A2) in TEM measurements & its correction |
Astigmatism correction in EMs |
| Field astigmatism in TEMs |
Stigmators |
| Objective stigmator/astigmatism correction |
Astigmatism in STEMs |
| Spatial resolution affected by objective astigmatism |
Astigmatism corrections of condenser and objective lenses in TEM for magnetic materials |
Correction of astigmatism of condenser lens using caustic image
|
Astigmatism effect on Fourier transform |
| Aberration coefficient C1,2/A1: two-fold axial astigmatism and its corrections in TEMs |
|
Correction of astigmatism of objective lens in TEM using Fresnel fringes
|
Correction of astigmatism of objective lens in TEM based on diffractogram |
| Correction of astigmatism of objective lens using caustic image |
Correction of objective astigmatism with minimum background contrast technique |
| Asymmetry |
| Distortion/asymmetry of X-ray peak from Gaussian shape in EDS |
Asymmetric units in unit cells |
| Asymmetric electron diffraction patterns |
|
| Atom |
| Number of atoms at surface of and in nanoparticles |
Number of lattice points (atoms) per unit cell |
| Atomic packing factor in crystals |
|
| Atom column in crystal |
| Probability of containing m atoms in a single atom column in crystal |
Contrast of atoms in TEM |
| Atomic displacement |
| Atomic displacement parameter/factor & mean-square atomic displacement |
Cross-sections of atom displacement due to electron irradiation in bulk |
| Displacement energy for bulk and surface diffusion induced by electron irradiation |
Displacement energy for atoms in bulk and at sample surface due to electron irradiation |
| Displacement energy for surface sputtering/knock-on induced by electron irradiation |
Elemental (atomic) displacement threshold of chemical elements due to electron irradiation at sample surface |
| Energy transfer for atomic displacement/knock-on process due to electron irradiation |
Elemental (atomic) displacement threshold due to electron irradiation |
| Elemental (atomic) displacement threshold due to electron irradiation in bulk |
Displacement of atoms due to electron irradiation in EMs |
| Atomic number (Z) |
|
| Dependence of inelastical scattering of electrons on atomic number |
Dependence of elastic scattering on atomic number |
| Dependence of thermal diffuse scattering on atomic number |
HRTEM analysis of light elements |
| Atomic & ionic radii and valence states of chemical elements in periodic table |
|
| Artifacts |
| Artifacts in TEM contrast transfer patterns and profiles |
Artifact in image or spectrum with high probe current or analyzing on mobile elements |
| Contrast reversal in EMs |
Diffraction effects on EELS intensity |
| Artifacts in electron holography measurements |
Artifact in electron tomography |
| Artifacts in EFTEM images |
EELS artifacts due to misalignment of ZLP |
| Streaking artefacts in FFTs of TEM images |
Artifacts and drawbacks of XRD technique |
| Streaking artifacts in EELS images or profiles |
Artifacts/spurious x-rays in EDS measurements |
| Inaccuracy/artifacts in electron diffraction and spurious intensities |
Artifacts induced by misalignment of condenser aperture |
| Artifact reduction in EM image recording |
Streaking artifact in TEM/STEM images |
| Artifacts in CBED patterns |
EELS artifacts |
| Atomic |
| Electron atomic scattering factors |
Atomic/high resolution/advanced/latest SEMs |
| Atomic weight of elements in periodic table |
Atomic structure determination by EXELFS |
| Atomic short-range ordering |
Atomic point defects |
| Atomic arrangement in crystal structures |
(Atomic) density of different materials |
| Atom probe tomography (APT) |
Comparison among TEM, APT,ToF SIMS and ICP-MS |
| Atmospheric thin window (ATW) EDS detector |
Attenuation of light |
| Attenuation of AES (Auger Electron Spectroscopy) electrons |
Audio |
| Auger electron spectroscopy (AES) |
| Electron relaxation and Auger electron generation |
Comparison between EDS and AES |
| Mean free path of Auger electrons |
Responding time of Auger electron emission for electron irradiation |
| Auger detection in EMs |
Comparison between EELS and AES |
| AES transitions |
Yield of Auger electrons |
| Autofocus methods in TEM imaging |
Automotive hardware |
| Average energy loss/mean energy loss
per inelastic electron collision |
|
| Automatic functions |
| Automatic qualitative EDS analysis |
Automatically indexing TEM electron diffraction patterns using machine learning |
| iFast (Integrated Fast Automation Software Technology) |
Quartz PCI-AM (Passive Capture Interface - Automated Measurement) |
| Axial/axis |
| Effects of axial illumination conditions in TEM system |
Axial coma aberration in EMs |
| Accuracies of beam tilt & of alignment of zone axis |
|
| Azimuthal and radial circles/Ronchigram in STEM |
|
