EELS of Arsenic (As)
- Practical Electron Microscopy and Database -
- An Online Book -

http://www.globalsino.com/EM/  



 

 

=================================================================================

Based on a non-relativistic theory, Allen and Rossouw [1] calculated the inelastic object functions for K-shell ionization. The calculated object functions for the K-shell excitations of some elements such as Te, Cd, As and Ga indicate that the localization of the object is less than 1 Å [2].

Figure 139 shows the As-L2,3 EELS spectrum, taken from a highly As-doped Si (silicon) crystal (3.7%, namely 1.85 × 2021 cm-3), before and after background extrapolation. The electron dose used for the data acquisition is 0.8 nA x 10 s at an accelerating voltage of 120 keV.

As-L2,3 EELS spectrum, taken from a highly doped As region

Figure 139. As-L2,3 EELS spectrum, taken from a highly As-doped silicon (Si) crystal (3.7%, namely 1.85 × 2021 cm-3), before and after background extrapolation. [3]

The background extraction window can be 150 eV in energy width (from 1,173 to 1,323 eV), and the signal integration windows can be 260 eV (1,323~1,583 eV) and 150 eV for the arsenic edge and silicon edge, respectively. [3]

 


 

 

 

 

 

 

 

 

 


[1] L.J. Allen, C.J. Rossouw, Phys. Rev. B 42 (1990) 11644–11654.
[2] N.D. Browning, S.J. Pennycook, Microbeam Anal. 2 (1993) 81–89.
[3] Alain Claverie, Transmission Electron Microscopy in Micro-nanoelectronics, 2013.

 

 

=================================================================================