Table of Contents/Index
Chapter/Index:
Introduction |
A | B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
| m point group |
m symmetry |
| m-3 point group |
m-3m point group |
| M4,5 edges in EELS |
| M4/M5 ratio of EELS white lines |
| M-family of characteristic X-ray emission |
M-planes of sapphire crystal |
| Major, minor, & trace elements in materials |
Apple products: iPhone, iPad, & iPod touch, Apple watch & MacBook |
| Automatically indexing TEM electron diffraction patterns using machine learning |
| Maps |
| Lattice-fringe visibility maps |
| Maclaurin series |
Macroscopic and microscopic fields in EM imaging systems |
| Magnesium (Mg) |
| EDS measurements of magnesium (Mg) |
EELS measurements of magnesium (Mg) |
| Lead magnesium niobate [Pb(Mgm/nNbn-m/n)O3, PMN] |
| MgS |
MgSe |
| MgB2 |
MgO |
| Mg-based metallic-glass alloys |
Spinel (MgAl2O4) |
| Magnetic multipole lenses |
| Differences between round and multipole lenses |
Multipole design for Cs correctors in EMs |
| Magnetic field |
| Measurement of magnetic field using off-axis electron holography |
Magnetic field lines |
| Magnetic induction |
| Magnetic field in electron microscopes |
| Electrons passing through magnetic lens |
Electron motion in electrostatic and magnetic fields |
| Convex electromagnetic lens |
Focal length of magnetic lenses |
| Image helical rotation and inversion due to magnetic field |
Lorentz force of moving electron in magnetic field |
| Aberrations in the electromagnetic round lenses |
Magnetic polepieces |
| Right-hand rule of Lorentz force vector |
Rotationally symmetrical electron lenses/magnetic field |
| EEL spectra/image shift on camera caused by magnetic objects |
Magnetic prism in GIF camera |
| Magnetic field creep |
| Magnetic materials |
Anisotropic materials |
| NiFe |
FeCoN |
| TEM analysis of magnetic materials |
Astigmatism corrections of condenser and objective lenses in TEM for magnetic materials |
| Coma-free alignment in TEM for magnetic materials |
Paramagnetic materials |
| Magnification of microscopes |
| Magnification versus camera length |
Magnification and its adjustment in TEM |
| Highest useful magnification of microscopes |
Magnification of electron microscopes |
| High magnification TEM observations |
Optical condition for high-magnification imaging in TEM |
| Correction of magnification & its aspect ratio of TEM images |
Calibration of magnification and scale bar in TEM |
| Main and satellites reflections in electron diffraction patterns |
Manager/director of electron microscope labs |
| Manganese (Mn) |
| EELS of Mn (manganese) |
Valence states of manganese |
(HAADF) STEM images of manganese (Mn)
|
Zr1-xMnxO2 |
| LaMnO3 |
TMO6 (e.g. MnO6) octahedral lattice |
| JEOL 2100 TEM operation manual |
FEI TEM operation manuals |
| Manually correctable aberrations |
Manufacturers/companies producing FIB & EM instruments |
| Marginal ray focus |
Market: EM companies in stock markets |
| Martensitic transformation |
Martensite |
| Mask |
| Hole mask/entrance mask in GIF system |
| Mass absorption coefficients of X-rays |
| Mass of electrons at accelerating voltage in vacuum |
Matrix of the seven crystal families in real and reciprocal spaces |
| Mass stopping power |
| Mass collision (ionization) stopping power |
Mass radiative stopping power |
| Mass-thickness effects |
| Mass-thickness effects on EDS signal/intensity |
Mass-thickness effects on EELS signal/intensity |
| Mass-thickness contrast in TEM images |
Mass-thickness contrast in STEM Images |
| Methanol applied in TEM sample preparation |
| ExSolve Wafer TEM Prep DualBeam, TEMLink and Thermo Fisher Metrios TEM |
Thermo Fisher Metrios TEM |
| Materials |
| Key Geometric, Materials, Thermal, and Electrical Tolerances in SEM |
|
| Interaction between incident electrons and matters |
Materials used for electron gun |
| Table of structural properties of materials |
Crystalline materials |
| Maximizing EDS intensity/counts |
Maximum achievable sample-tilt-angle in TEM |
| Maximum-entropy deconvolution |
Maximum entropy method |
| Maximum (phase-)contrast in (HR)TEM imaging (with Scherzer defocus) |
| Matlab: GNU Octave |
| fprintf in Octave |
| Maximum escape depth |
| Maximum escape depth of secondary electrons |
Maximum escape depth of X-rays |
| Maximum ranges of primary electron beam in EMs |
Maxwell’s equations |
| Mean Free Path: Introduction |
| Mean free path of X-rays |
| Mean free path of electron scattering (Introduction: elastic and inelastic) |
| Mean free path of incident electrons in EMs (table in page4623) |
| Mean free path of electron elastic scattering |
Mean free path of Auger electrons |
| Mean Free Path (inelastic): Theory on inelastic mean free path (IMFP) of electrons |
| Electron inelastic mean free path of elements and compounds |
TEM sample thickness for STEM and EELS ~ Mean Free Path |
Plasmon mean free path
|
| Mean ionization energy (potential) of complex materials |
Mean filters for noise reduction |
| Mean-square atomic displacement |
Mean time to failure (MTTF) to electromigration |
| Mean energy loss/average energy loss
per inelastic electron collision |
Mean time between failures (MTBF) to electromigration |
| Medium range ordering (MRO) in materials |
Median time to failure (MTTF) to electromigration |
| Mechanical |
| TEM sample preparation method of mechanical polishing + ion milling |
Mechanical properties of materials |
| EELS ZLP broadening due to mechanical vibration |
STM holders for EMs |
| Peltier mechanical cooling |
Compressive/mechanical pumps |
| Mechanical, electron and ion probe diameters |
Specimen (stage) drift/instability/movement in TEMs/STEMs |
| Mechanical properties of silicides |
| Mechanical vibration effects on EMs |
| Contribution of mechanical vibrations to diffractograms |
| Mechanisms and processes of secondary electron generation |
| Meissner effect |
| Melting temperature/melting point |
| Eutectic point |
Melting point of nano-structures |
| Melting/temperature rise of materials in FIB processes |
Bonding energies and melting temperatures of substances |
| Young's moduli and melting temperature |
Melt-spinning |
| Relationship between bond energy and melting point |
| Crystal percentage in metallic glasses made from melts |
Cooling rate to make metallic glasses from melts |
| Glass forming ability (GFA) from melts |
Critical casting thickness for formation of metallic glass alloys from melts |
| Memories |
| Ferroelectric random access memories (FRAMs) |
Comparison between different memories |
| 1T1C/2T2C architectures in memories |
Failure analysis of memories |
| Nonvolatile electrical memory devices |
| Milling rate of materials in FIB |
Milling rate of materials with argon ion polishing |
| Mercury (Hg) |
| Merohedral point groups |
| Metal oxides |
| Oxygen vacancy in metal oxides |
Thermodynamic stability of metal gate oxides in ICs |
| Metalorganic chemical vapor deposition (MOCVD) |
| Metals |
| Free-electron and interband transition metals |
Transition-metal complexes |
| Metals in periodic table |
Metalloids in periodic table |
| Metal-insulator transition (MIT) with change of temperature |
Free-electron metals |
| Metal gate |
Refractory metal silicides in ICs |
| Critical casting thickness for formation of metallic glass alloys from melts |
| Metallic bonding-type materials |
| Comparison between ionic, covalent, and metallic materials |
TEM analysis of metallic materials |
| Metallic glasses |
| fcc-type packing short range ordering of metallic glass |
Free volume in metallic glasses |
| Structural relaxation of metallic glasses at elevated temperatures |
Free volume change of metallic glasses at elevated temperatures |
| HRTEM images & electron diffraction of amorphous metallic glasses |
Glass transition of metallic glasses |
| Crystallization of metallic glasses |
Defects in metallic glasses |
| Electrical resistivity/resistance of metallic glass depending on temperature |
Plastic deformation of metallic glasses |
| Phase separation in metallic glasses |
Crystal percentage in metallic glasses made from melts |
| Cooling rate to make metallic glasses from melts |
| Metals |
Properties of metal interconnects and metallization selection for ICs
|
Metallization in IC fabrication |
| IC failure induced during metal etching |
| Metrology tools for semiconductor industry |
Miller-Bravais indices |
| Miller indices |
| Determination of Miller indices of planes |
| Minerals |
| Gaudefroyite (Ca4Mn3+2.5(BO3)3(CO3)O2.25(OH)0.75) |
Iron (Fe) |
| Microdiffraction pattern/shadow image/Ronchigram in STEM |
| Microelectronics |
| Vacuum requirements of EMs for microelectronics industry |
| Microscopies |
| Operando microscopy techniques |
Fluctuation microscopy |
| Microwave |
|
| Generating a pulsed electron beam using microwave and pulsed RF-based guns in EMs |
Microwave semiconductor devices |
| Microtome for specimen-sectioning |
|
|
'Mini' lens |
|
| Minimum |
| Minimum attainable probe size in STEM |
Minimum (phase-)contrast in (HR)TEM imaging with Gaussian defocus |
| Minimum detectable mass (MDM) |
| Sensitivity/detection limit/minimum detectable mass of EELS |
Minimum detectable limit (mass)/minimum mass fraction (MMF) of EDS |
| Mirror planes (m, σ) in crystals |
| Misfit/mismatch layer structures |
| Lattice-mismatched epitaxial alloy |
Misfit dislocation: Lattice mismatch versus misfit dislocation separation |
| Modulation Transfer Function (MTF) of detectors in EM |
Modulation/satellite reflections due to mutually commensurate mismatch |
| Misfit layer chalcogenides |
Misfit strain |
| Missing pattern failure in IC chips |
|
| Mixed dislocations |
"Mixed" inelastic scattering and its EELS |
| mm2 point group |
mmm point group |
| Mobile devices |
| ICs in mobile devices |
Mobile device/hardware |
| Standby power for mobile devices |
|
| Mobile charges in SiO2 field insulator in MOS structures |
Möllenstedt–Düker biprisms in optical and electron microscopes |
| Mobility |
| Electromigration transport mobility of ions in materials |
Electrons/holes mobility & current versus strain in materials |
| Model |
| Models of SEM/TEM/STEM systems |
Models of FIB systems |
| Model for TEM samples for EM simulations |
Modelings & simulations |
| Models for simulation in EM techniques |
| Molecules |
| EELS of gaseous atoms and molecules |
| Molybdenum (Mo) |
| EELS Measurement of Molybdenum (Mo) |
EDS/WDS measurements of molybdenum (Mo) |
| MoSix |
Molybdenite (MoS2, molybdenum sulfide) |
| Momentum space |
| Momentum transfer |
| Momentum/energy transfer from charged particle to matter |
Momentum transfer of electron due to collision with atoms |
| Momentum transfer of incident electrons after atomic ionization/energy loss |
| Monochromator in electron microscopes |
CMOS Monolithic Active Pixel Sensors (MAPS) direct electron detectors |
| Young’s fringes produced by TEM image shift (with and without monochromator) |
Monochromatic electron source in EMs |
| EELS energy resolutions improved by monochromators |
Disadvantages of monochromation system in EMs |
| Monoclinic crystal systems |
| 2 point group |
m point group |
| 2/m point group |
| Monoclinic space groups |
| A-centered lattices/A-centering & its space groups |
| A2/a (C2/c , 15) |
A2/m |
| C-centered lattices/C-centering & their space groups |
| C2 (5) |
Cm (8) |
| Cc (9) |
C2/m (12) |
| C2/c (A2/a, 15) |
| P (primitive) lattices & their space groups |
| P2 (3) |
P21 (4) |
| Pm (6) |
Pc (7) |
| P2/m (10) |
P21/m (11) |
| P2/c (13) |
P21/c (14) |
| P21/n |
| Monte Carlo algorithm |
| EM simulation of integrated circuits |
| Moore’s law |
Morphological image processing |
| Most |
| Close packed (most densely packed) planes and directions in crystals |
Most possible scattering angle of incident electrons for atomic ionization/energy loss |
| Most probable energy (MPE) of secondary electron emission |
Most probable distance between neighbouring
atoms |
| Motif/basis/lattice point |
Motion of electron in electrostatic and magnetic fields |
| Mott differential cross section of elastic scattering |
"Mottling" visible in FIB and Ar-milled specimens |
| Multiple |
| Multiple linear least squares (MLLS) fitting in EELS analysis |
Multiple linear least-squares (MLLS) peak fitting for EDS analysis |
| EELS measurement through the multiple layers |
| Multiple/plural scattering of electrons |
| Plural scattering of electrons |
Multiple/plural scattering in EELS |
| Multiple scattering corrections of EELS |
Thin TEM sample to avoid multiple/plural scattering |
| Multiple scattering of electrons in EMs |
Double/multiple diffraction in electron diffraction patterns |
| Multi beam inspection tool from ASML |
| Multislice |
| Multislice simulation (MS) of TEM images |
Elastic-inelastic multislice simulation for EELS |
| Mutual Correlation Function (MCF) |
Mα X-ray emission |
