IC Failure Induced during Metal Etching

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IC Failure Induced during Metal Etching

Table 2431. Metal-etch-related bond-pad contamination in IC devices.

Contaminant

Contamination sources

Effects

Fluorine

Introduced through top metal etch or pad opening process, wafer packaging foam material, or shipping

Induce non-sticking bond pad

Fluorine can
react with Al to form F crystal: (NH₄)₃(AlF₆) compound [1]; High fluorine contamination can induce thick native oxide

Chlorine

Introduced through top metal etch or pad etch process

[1] Y. N. Hua, S. Redkar, C. K. Lau, “A Study on Non- Stick Aluminium Bondpads due to Fluorine Contamination using SEM, EDX, TEM, IC, Auger, XPS and TOF-SIMS Techniques,” Proceedings from the 28th International Symposium for Testing and Failure Analysis, Phoenix, Arizona, November, 2002, pp. 495-504.

Practical Electron Microscopy and Database

An Online Book, Second Edition by Dr. Yougui Liao (2006)

IC Failure Induced during Metal Etching