Table of Contents/Index
Chapter/Index:
Introduction |
A | B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
| C-centered lattices/C-centering & their space groups |
|
| Monoclinic |
| C2 (5) |
Cm (8) |
| Cc (9) |
C2/m (12) |
| C2/c (A2/a, 15) |
|
| Orthorhombic |
| C2221 (20) |
C222 (21) |
| Cmm2 (35) |
Cmc21 (A21am, 36) |
| Ccc2 (37) |
Cmcm (63) |
| Cmca (Abma, Bmab, 64) |
Cmmm (65) |
| Cccm (66) |
Cmma (67) |
| Ccca (68) |
|
| C11b (body centered tetragonal) |
C40 structure |
| C54 structure |
Comparison between hexagonal and C54 |
| C49-C54 titanium disilicide (TiSi2) |
C-planes of sapphire crystal |
| c/a ratios in hcp structures |
|
Calibration |
|
| Calibration of magnification and scale bar in TEM |
EDS energy calibration |
| Calibration of electron diffraction patterns |
Calibration of EELS profile by K edge of amorphous carbon (π* peak) |
Cadmium (Cd) |
|
| CdSe |
EELS of Cadmium (Cd) |
Calcium (Ca) |
|
| EDS measurement of calcium (Ca) |
EELS measurement of calcium (Ca) |
| Calcium fluoride (CaF2) |
|
| Ca1-xSrxTiO3 |
CaTiO3 |
| CaO |
Ca3Al2Si3O12 |
|
|
| Castaing-Henry (C-H) magnetic prism/electrostatic mirror |
Cat’s eye (beam shape) |
| Chalcogenide |
|
| Misfit layer chalcogenides |
|
| Challenges/difficulties: advanced TEM-related measurements for semiconductor failure analyses |
Challenges in in-line SEM inspection on wafers |
| Cameras |
|
| Charge-coupled device (CCD) for EELS & EFTEM |
Detective quantum efficiency (DQE) in EELS and imaging systems |
| CCD sensors/detectors with phosphor and fiber-optic coupling |
|
| Dew point |
Dynamic range |
| Gatan hardware, camera, & software |
Electron-to-Counts conversion efficiency |
| Phosphor used in electron spectrum detectors/cameras |
Nyquist frequency |
| Point-spread function of camera |
Photodiode array (PDA) for EELS |
| Gatan MultiScan camera complete KIT |
Spatial of camera |
| Photo-diode array (PDA) detectors |
Gatan Orius SC200D CCD camera |
| Gatan Bioscan Camera |
Scan speed/dwell time of detectors and cameras in TEM/STEM imaging and elemental mapping |
Camera length |
|
| Camera length in EBSD |
Projector lenses & camera lengths/camera constant in TEM/STEMs |
| Magnification versus camera length |
(Effective) camera length in TEM |
| Camera length and its effects on various measurements |
|
|
|
| PVC of capacitors |
Capacitive coupling voltage contrast (CCVC) |
|
|
| Carbon analysis using analytical techniques |
EDS measurement of carbon |
| EELS of carbon (C) |
Calibration of EELS profile by K edge of amorphous carbon (π* peak) |
| Electron diffraction patterns and FFT of HRTEM of amorphous carbon |
EM images of amorphous carbon |
| Raman spectrum of carbon |
X-ray absorption induced by carbon contamination |
| TEM observation of carbon nanotubes |
Hydrocarbon (HC) and carbon contamination of EM specimens |
| Carbon contamination effects on EELS measurements & its reduction |
Carbon deposition by FIB |
| Carbon-materials bonds |
(Holey) carbon supports for EM analysis |
| Carbon coating on TEM samples – to avoid charging effect |
EDS-TEM specimen holders |
| |
|
| Carbides |
CF4 gas |
| C-doped Fe/carbon in iron |
Copper (Cu) with dielectric diffusion barrier SiCxNy |
| Diamond |
Boron carbide |
| Carbon monoxide (CO) |
SiC (silicon carbide): 6H-, 4H- and 3C-(β-)SiC |
| C-based metallic-glass alloys |
Carbon-coated aluminum |
| |
|
| Carbon deposition/contamination in SOFCs |
Carbon contamination in IC devices |
Catalysts |
|
| TEM analysis of catalysts |
Catalytic converter |
|
|
| CASTEP |
|
| Cathode in electron gun in EMs |
Cathode (positive) & anode (negative) electrode materials for lithium batteries |
|
|
| Electron relaxation and light/cathodoluminescence |
In situ observation in cathodoluminescence imaging |
| Cathodoluminescence imaging |
Resolution of cathodoluminescence technique |
| Cathodoluminescence system and their troubleshooting |
Comparison between Cathodoluminescence and EELS |
|
|
| Correction of astigmatism of objective lens using caustic image |
Coma-free alignment in TEM based on caustic image |
Correction of astigmatism of condenser lens using caustic image
|
|
| Cavity/hole/bubble/void in materials |
Generating a pulsed electron beam using an RF-cavity chopped-beam in EMs |
| CaTiO3 |
|
| Center of inversion (center of symmetry, i) |
|
Centering in EMs |
|
| Voltage centering in TEM |
Current centering in TEM |
|
|
| Centrosymmetric space groups & Laue groups |
|
Ceramics |
|
| TEM analysis of ceramics |
|
|
|
| EELS of Cerium (Ce) |
EDS measurement of cerium (Ce) |
| CeF3 |
Gadolinium doped ceria oxide (GDC) |
| Ce-based metallic-glass alloys |
Ce2O3 and CeO2 |
| Cu-CeO-YSZ |
|
Cesium (Cs) |
|
| CsCl & cesium chloride structure |
|
|
|
| CFM56 engines |
|
Channel in EELS |
|
| Channels: Gain variations in energy filter, CCDs & EELS channels |
Gain normalization for EELS measurement |
Channeling |
|
| Electron channeling in EM specimens |
Channelling/diffraction enhanced X-ray emission in EDS measurements |
| Electron channeling effects in EELS measurements |
Electron channeling
in HAADF STEM imaging |
| Ion channeling on FIB measurements |
Strain/stress analysis with STEM (channeling/dechanneling) |
Charge |
|
| Valence state controlled by charge neutrality |
Charge-flipping algorithm |
| Properties of accelerated charged particles |
Instability of EEL spectra or images due to GIF charging |
| Spacecraft charging |
Techniques used to detect/measure charges in EM samples |
|
|
| Full-frame transfer (FT) CCD |
Interline transfer (IT) CCD |
| Super pixel/binning/binned pixel in CCD |
CCD for EELS & EFTEM |
| Binning in CCD |
Blooming/smearing in CCD |
| Streaks formed by smearing/blooming in CCD camera |
Noise reduction by binning in CCD |
| Binning versus saturation/exposure time in CCD camera |
Slow scan charge-coupled device (SSCCD) camera |
| Scintillator-coupled CCD camera |
Operating temperature of CCD cameras |
| Characteristic inelastic scattering angle for EELS |
Characteristic X-rays |
| Sample charging in electron microscopes (EMs) and sample thickness effect |
|
| Charging of electrically isolated materials (insulator) in SEM and TEM samples |
Charge-induced SE (secondary electron) contrast in SEM |
| Positive charging in SEM observation |
Negative charging in SEM observation |
| Instability of TEM imaging due to specimen charging |
Carbon coating on TEM samples – to avoid charging effect |
| Ionic migration induced by charging effect in SEM |
Coating to avoid charging in SEM samples |
| Linearization of voltage contrast in SEM |
|
| Charging induced elemental migration in EM samples |
|
| Charging of electrically isolated materials in SEM and TEM samples |
Electromigration |
| Electrostatic force |
Electron wind force |
| Ionic migration induced by charging effect in SEM |
Ionic migration due to sample surface charging |
Charging in electron microscopes (EMs) |
|
| Discharging and charging in electron guns |
|
Charging in FIB process |
|
| Sample charging in FIB processes |
Charging enhanced electron/ion-beam-induced-deposition |
Charged particle |
|
| Coulomb interaction between heavy charged particle and orbital electron |
Hard collision between charged particle and atom |
| Soft collision between charged particle and atom |
Energy transfer from charged particle to matter |
| Interaction between incident charged particle and matter |
Radius of path of electrons/charged particles in a magnetic field |
| Rutherford (elastic) scattering |
Wave properties of charged particles |
| Corrections of Spatial Drift between Successive Acquisitions in 4D STEM Measurements |
Correction of chromatic aberration in charged particle accelerators with time-varying fields |
| Charged defects and deep level traps in materials |
Chaotic phases/structures |
Chemical analysis |
|
| Chemical analysis by TEM/SEM |
Analysis of chemical-state/structure |
| Dopant-selective etching/staining in IC analysis |
|
|
|
| Chemical bond length |
Bonding and antibonding |
| Bond overlap population diagram (BOPD) |
Elemental bonding analysis using EELS |
| Bonding disorder in materials |
Bonding energies and melting temperatures of substances |
| Valence electron energy modified by bond formation |
Core electron energy modified by bond formation |
|
|
| Chemical and physical constants, and unit conversion |
Chemical ordering in crystals |
Chemical processes |
|
| In-situ TEM observations of chemical processes |
Chemical changes induced by ion beam irradiation |
| TEM specimen preparation by chemical etching |
Isotropic wet-etching |
| Anisotropic wet-etching |
|
|
|
| Chemical shift detection of elements by EDS |
Chemical shift detection of elements by EELS and EFTEM |
|
|
| Metalorganic chemical vapor deposition (MOCVD) |
FIB induced deposition |
|
|
| Cherenkov/Cerenkov/Čerenkov radiation |
Chevron defect |
| Chimney-ladder structures |
Chiral space groups |
|
|
| EDS measurement of chlorine (Cl) |
EELS of chlorine (Cl) |
| Chlorine-induced corrosion/contamination in ICs |
BCl3 |
| CsCl |
TiCl4-Ether complex |
| Cl2 |
HCl |
| AlCl3 |
Sodium chloride (NaCl) |
| ICl |
|
|
|
| Effects of chromatic aberration on EELS |
Resolution limit due to chromatic aberration (Cc) |
| Dependence of Cs and Cc aberrations on accelerating voltage of beam |
Achromatic lenses/achromats |
| Standard deviation of the Gaussian distribution of defocus due to the chromatic aberration |
Spatial resolution of EFTEM mapping affected by chromatic aberration |
| Beam spreading in STEM caused by chromatic aberration |
Chromatic aberration affected by beam alignments |
| Defocus induced by chromatic aberration/energy deviation in electrons |
Chromatic aberration of objective lens |
|
|
| Cc correction in SEM |
Interaction between chromatic and spherical aberration corrections |
| Effect of chromatic aberration on fine structure analysis using EFTEM |
Effect of chromatic aberration on spatial resolution in EMs |
| Correction of chromatic aberration in charged particle accelerators with time-varying fields |
Quadrupole for chromatic aberration (Cc) corrections |
| Hexapole for chromatic aberration (Cc) corrections |
Correction of electron optical aberrations in EFTEM |
|
|
| EELS measurement of chromium (Cr) |
EDS measurement of chromium (Cr) |
| Cr2O3 |
|
| Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
La1.2CrS3.2 |
Cleaning |
|
| Wafer cleaning |
Plasma cleaning and plasma cleaners used for EM sample cleaning |
|
|
| Cleavage plane of crystals |
Circle of least confusion |
| Circular functions in EMs |
|
|
|
| Cliff-Lorimer ratio method for EDS |
Cliff-Lorimer sensitivity factors in EDS |
| EDS quantification with k-factors (Cliff-Lorimer factors) |
|
|
|
| Close packed (most densely packed) planes and directions in crystals |
|
| Clock time in EDS measurements |
Clock edge detection via electron beam probing |
Clustering |
|
| Clustering of vacancies into dislocation loops |
k-means clustering for sorting diffraction patterns |
CMOS |
|
| Scaling of CMOS-FET |
CMOS failure mechanisms |
| Local oxidation of silicon (LOCOS) |
CMOS failure mechanisms in FinFET technology |
| Shallow trench isolation (STI) failure mechanisms of CMOS |
ESD (electrostatic discharge) failure of CMOS technology |
| CMOS Monolithic Active Pixel Sensors (MAPS) direct electron detectors |
|
| CMP scratches |
Cockcroft–Walton voltage-multiplier circuit generator |
| Coarsening/Ostwald ripening of dislocation loops |
FIB circuit edit (modification) |
Coating |
|
| Coating of TEM specimen to reduce beam damage & sputtering |
Coating materials for cutting tools |
|
|
| EELS Measurement of Cobalt (Co) |
Co-X equilibrium phase diagrams |
| Co-based metallic-glass alloys |
EDS measurements of cobalt (Co) |
|
|
| Diffraction patterns of cobalt disilicide (CoSi2) and cobalt silicide (CoSi) |
Mapping of CoSi and CoSi2 Distributions |
| Comparison between nickel silicides and cobalt silicides |
|
|
|
| Failure due to cobalt silicide stringers/spikes |
Failure of cobalt silicidation in ICs |
| Void-formation-induced failure in cobalt silicidation in ICs |
|
|
|
| Coherence between diffracted electron beams in TEMs |
Low angle elastic scattering and coherence in TEM |
| Coherence of electron beam shown by STEM/Ronchigram |
Partial coherence of electron source |
| Coherent beam current in EMs |
Spatial coherence/incoherence of electron source |
| Electron beam coherence vs HRTEM |
Temporal coherence/incoherence of electron source |
| Coherence length of electrons |
Coherent aberrations |
| Coherent illumination in EMs |
Beam convergence angle/coherence effects on CTF patterns |
| Electron beam convergence angle and coherence |
Effects of illumination coherence on spatial resolution in TEMs |
| Optimum convergence semi-angle in STEM |
Convergence semi-angle of the ion beam in a FIB system |
Cincidence site lattice (CSL) boundary |
|
| Incoherent coincidence site lattice (CSL) boundary |
Σ(Sigma numbers): Coincident site lattice (CSL) of twin and grain boundaries |
|
|
| Coefficients |
Coercive field in ferroelectrics |
| (Cold cathode) ionization gauge/Penning gauge |
Cold field emission electron gun (CFEEG) |
| Background variation in EELS and EFTEM due to composition variation in materials |
|
|
|
| Funnels used to fill cold traps with liquid nitrogen for EMs |
Cold trap to prevent contamination of TEM specimen |
| ACD (anti-contamination device) operation on TEM system |
|
|
|
| EELS collection angle in diffraction and STEM modes and its measurements |
Effects of entrance aperture/collection angle on EELS |
| Spatial resolution of EFTEM mapping affected by collection angle |
Dependence of information depth on primary electron beam energy/incident angle/collection angle in REELS |
|
|
| Color tones of materials |
Collection angle of EDS detector |
|
|
| Collection angle in TEM diffraction and STEM modes |
Dependence of collection semiangle on objective aperture in TEM imaging mode |
|
|
| Collimator in EDS detectors in EMs |
|
Collision |
|
| Collision (ionization) stopping power |
Hard collision between charged particle and atom |
| Electron collision with matter in TEM |
Soft collision between charged particle and atom |
|
|
| Variation of electron beam current in EM columns |
|
Columnar substructures in crystals |
|
| Diffuse diffraction streaks in electron diffraction from columnar substructures |
|
|
|
| Properties of coma-free lenses |
Off-axial coma and field of view |
| Difference between axial coma and twofold astigmatism |
Coma-free point/plane |
| Electron-beam-tilt-induced coma in TEM |
Wobbler for coma-free alignment with beam tilt |
|
|
| Aberration coefficient C2,1 (B2): axial coma aberration |
Axial coma (B2) correction with Ronchigram |
| Determination of axial coma in TEM measurements |
Coma-free alignment in TEM based on caustic image |
| Coma-free alignment in TEM for magnetic materials |
|
|
|
| Comparison between CBED and electron holography |
Comparison between STEM and SEM |
| Comparison between EDS and AES |
Comparison between EDS and EELS |
| Comparison between TEM and SEM |
Comparison between XAS and EELS |
| Comparison between CBED and EBSD |
Comparison between CBED and SAD (selected area diffraction) |
| Comparison between CTEM and STEM |
Comparison between EELS and AES |
| Comparison between optical/light and electron microscopes |
Comparison between TEM and STEM bright field imagings |
| Comparison between X-ray and electron diffractions |
Comparison between VEELS and conventional optical spectroscopy |
| Comparison between TEELS (EELS) and REELS |
Comparison between FIB, electron beam and laser beam techniques |
| Comparison between EDS and WDS |
Comparisons between HRTEM and EELS techniques |
| Comparison between HRTEM and HR-HAADF-STEM imaging |
Comparison between different electron sources/guns |
| Comparison between backscattered electron & secondary electron imagings |
Comparison between conventional and synchrotron X-ray Diffraction |
| Comparison between single crystal and powder X-ray diffractions |
Comparison between FIB and Ar (argon) ion milling specimen preparations |
| Comparison between EFTEM and EELS mapping |
Comparison between low- and high-voltage (S)TEM measurements |
Comparison of data acquisition times of various techniques
|
Comparison between Cathodoluminescence and EELS |
| Comparison between effects of large and small collection angles in EELS |
Comparison of different EELS techniques |
| Comparison of microscope conditions with parallel and convergent beams |
Comparison between infrared spectroscopy and EELS |
| Comparison among TEM, APT,ToF SIMS and ICP-MS |
Comparison between XPS and various SIMS |
| Comparison between various SIMS |
Total, partial and integral cross-sections for inner-shell ionization |
Comparisons: some technique considerations |
| Comparison of various X-ray spectrometers |
Diffraction comparison between different cubic crystal structures |
| Advantages and disadvantages between thin and thick/bulk sample in EMs |
Intensity and imaging comparison between elastic and inelastic scatterings |
| Comparison between aberration-corrected and uncorrected EMs |
Comparison between X-rays and energetic moving electrons |
| Comparison between conventional electron diffraction and PED, and PED applications |
Comparison between EFG(field emission)-TEMs and CTEMs (LaB6 and tungsten) |
| Energy resolutions of different spectroscopic techniques |
Comparison of lens conditions between TEM diffraction and TEM imaging modes |
| Comparison of electron optics of various filters & spectrometers |
Comparison between common pumps used in EMs |
| Comparison between low and high voltage TEM/STEM |
Comparison between low and high voltage EELS measurements |
| Comparison of EDS measurements with low- & high-energy incident electrons |
Relationship between electron diffraction patterns and stereographic projections |
Comparisons: Materials and their applications |
|
| Comparison between ionic, covalent, and metallic materials |
Comparison between valence band (outer) and core (inner) electrons |
| Comparison between different batteries |
Comparison between different memories |
|
|
| Companies/manufacturers producing FIB & EM instruments |
|
|
|
| Modulation/satellite reflections due to mutually commensurate mismatch |
|
Compounds |
|
| Crystal structure of compounds |
|
|
|
| Etching of III-V/compound semiconductor materials |
|
|
|
| Compressive/mechanical pumps |
|
|
|
| Objective aperture for STEM imaging |
Condenser lenses/apertures in TEMs |
| Artifacts induced by misalignment of condenser aperture |
|
|
|
| Troubleshooting of microscope computers |
Computer/remote application in EMs |
|
|
| Compton scattering of electrons |
Constant-loss approximation on process of secondary electron generation |
|
|
| Condenser lenses/apertures in TEMs |
Detailed optics of condenser lens in TEMs/STEMs |
| Twin condenser lens systems in EMs (CL1/CL2) |
'Mini' lens |
| Wobbler for condenser lens excitation in TEM/STEM |
Beam alignment between condenser and objective lenses |
Correction of astigmatism of condenser lens using caustic image
|
Astigmatism corrections of condenser and objective lenses in TEM for magnetic materials |
| Illuminating spot size & intensity changed by condenser lens |
|
|
|
| Outer-/Outermost-shell electrons (electrons in valence- and conduction-bands) |
Conduction- & valence-band offsets |
| Unoccupied energy levels in conduction band (EELS) |
|
|
|
| Contrast & intensity in annular dark field (ADF) STEM images |
Contrast analysis of HAADF-STEM images |
| Confocal/focal series STEM |
|
|
|
| Barrier layer in contacts in ICs |
Contact failure in ICs |
| Ohmic contacts in ICs |
Historical development of ohmic contacts in Si-based ICs |
| Voids formed in Si at contact interfaces |
Spiking at contacts in ICs |
| Non-Ohmic contact failure in ICs |
Resistive contact with resistive interface |
Contamination |
|
| Contamination/corrosion in ICs/wafers |
Contamination of GIF system |
|
|
| ACD (anti-contamination device) operation on TEM system |
Contamination of apertures |
| Cold trap to prevent contamination of TEM specimen |
Vacuum contamination in EMs |
| Contamination reduction in EM vacuum |
TEM/STEM film thickness measurements based on contamination spots |
| Contamination and cleaning of electron guns in EMs |
Effect of hydrocarbon in SEM observation |
| Cleaning of hydrocarbon contamination by oxygen radicals in EMs |
Degradation of EDS spatial resolution due to specimen contamination |
|
|
| Condenser stigmators |
Concave lens in electron microscopes |
| Continuous/discrete/fast Fourier transform (DFT/CFT/FFT) |
Convolution/folding of functions |
| Contrast/visibility of dislocations and stacking faults in TEM and EMs |
|
| Contrast/visibility of images |
Contrast: Image contrast in aberration-corrected EMs |
|
|
| TEM contrast and underfocus |
Mass-thickness contrast in TEM images |
| Diffraction contrast in TEM images |
TEM contrast limit of chemical elements |
| Correction of objective astigmatism with minimum background contrast technique |
Background contrast in TEM/STEM images |
| High contrast aperture in TEMs |
Factors affecting contrast/intensity of elemental measurements (EELS & EDS) |
Contrast in HRTEM imaging |
|
| Minimum (phase-)contrast in (HR)TEM imaging with Gaussian defocus |
Maximum (phase-)contrast in (HR)TEM imaging (with Scherzer defocus) |
| Contrast delocalization/blurring effect in TEM images |
Contrast of atoms in TEM |
|
|
| Contrast reversal of bright field TEM/STEM images |
Contrast Reversal in SEM imaging |
| Contrast reversal in HAADF imaging |
|
Collection efficiency |
|
| Collection efficiency of EDS |
Collection efficiency of EELS |
| Collection efficiency of secondary electrons in SEM |
Collection efficiency of backscattered electrons |
| Energy-loss mechanisms in a head-on collision between an incident electron and nucleus |
|
|
|
| Contrast dependence on accelerating voltage of PE (primary electrons) |
Dependence of dopant contrast in Si on accelerating voltage of PE |
| Contrast dependence on spot size (probe current) |
Contrast dependence on tilt angle of sample |
| Contrast dependence on design of the microscope |
Contrast dependence on detector position |
| Contrast dependence on dopants in semiconductors |
Contrast dependence on features (edge effect) |
| Contrast dependence on lens shape |
Contrast dependence on chamber shape |
| Contrast dependence on scan speed |
Atomic contrast (Z-contrast) in SEM |
| Charge-induced SE (secondary electron) contrast in SEM |
Contrast dependence on surface structure/surface-topography contrast |
| Contrast dependence on vaccum level/gas pressure |
Contrast dependence on detector bias |
| Working distance in SEM and its effects on image contrast |
Contrast dependence on angle of detection |
| Contrast reversal |
Contrast dependence on specimen composition/elements of materials |
| Contrast in SEM Images: voltage contrast |
Shadowing contrast in SEM |
| Bias-induced contrast/intensity effect in SEM |
Contrast dependence on negative potential on the sample |
| Correction of objective astigmatism with minimum background contrast technique |
|
|
|
| Topographic contrast (sharpness) depending on beam energy |
Topographic contrast (sharpness) affected by the detector position |
| Convergent beam electron diffraction (CBED) |
|
| Artifacts in CBED patterns |
CBED operation procedure |
| Applications of CBED |
Measurements of convergence semi-angle in STEM and CBED |
| Intensity distribution in the CBED disks |
Comparison between CBED and SAD (selected area diffraction) |
| Sample thickness determination using CBED |
Bragg spots in CBED |
| Excitation error and Ewald sphere in CBED |
Focused convergent incident electron beam |
| Defocused convergent incident electron beam |
Deficiency lines in zero-order disc in CBED patterns |
| Higher order Laue zones (HOLZ) lines in CBED |
Effects of beam-specimen interaction volume on CBED |
| Pixel resolution for recording CBED patterns |
Zero-order disk of CBED patterns |
| Probe shift in TEM system when switching between CBED and other modes |
Comparison between CBED and EBSD |
| CBED Kikuchi pattern contrast depending on samples thickness |
Large angle convergent beam electron diffraction (LACBED) |
| Dislocation detection by CBED and LACBED |
Disk size/radius in CBED |
| Rocking-curve intensity oscillations within CBED |
Comparison between CBED and electron holography |
| Relationship between diffraction group and point group |
Spatial resolution in CBED measurements |
| Dynamical extinction lines in CBED patterns |
Comparison between X-ray (XRD) and electron diffractions |
| Improvement of CBED analysis by energy filter |
Accuracy of CBED patterns |
| CBED: Strain/stress analysis using CBED |
|
| Accuracy of strain measurement by CBED |
Optimization of specimen thickness for strain analysis by CBED |
| CBED optimization for strain analysis |
Splitting of HOLZ lines in CBED patterns |
CBED in STEM mode |
|
| Polarization in ferroelectrics measured by CBED in STEM mode |
|
|
|
| Linear contrast transfer theory |
Phase contrast transfer function in real EMs |
| Diffractogram & phase Contrast Transfer Function (pCTF) |
Artifacts in TEM contrast transfer patterns and profiles |
| Sensitivity of CTF to defocus of objective lens |
Beam convergence angle/coherence effects on CTF patterns |
| Electron Ronchigram contrast transfer function (CTF) in STEM |
TEM/STEM characteristics affected by CTF damping |
|
|
| Converging-lens control system in EMs |
Conventional TEM (CTEM) |
Convergence |
|
| Convergence semiangle in TEM and diffraction modes |
Electron beam convergence & convergence angle |
| Aberration & beam spread/convergence |
Dependence of information depth on primary electron beam energy/incident angle/collection angle in REELS |
| Spatial resolution/beam spreading in STEM depending on convergence semiangle |
Beam convergence angle/coherence effects on CTF patterns |
| Electron beam convergence angle and coherence |
Applicable larger convergence angle in aberration-corrected EMs |
| Measurements of convergence semi-angle in STEM and CBED |
Comparison of microscope conditions with parallel and convergent beams |
| Beam convergence angle/coherence effects on phase shift |
|
Converter |
|
| Analog-to-digital (A/D) converter |
|
Convex |
|
| Convex electromagnetic lens |
Convex structures |
| Material growth on convex surfaces |
|
Cooling systems |
|
| Liquid nitrogen (N2) cooled cryostat (e.g. in EDS detectors) |
Peltier mechanical cooling |
| Peltier thermoelectric cooling |
TEM/STEM cooling holders and specimen cooling |
| Water cooling in EMs |
|
|
|
| Cooling rate to make metallic glasses from melts |
Generation of defects in crystals depending on cooling rates |
|
|
| Coordination number study by ELNES & EXELFS |
Coordination number dependence on free volume in metallic glass |
| Short-range-orderings dependence on coordination number in metallic glasses |
Coordination number of atoms in crystals |
| O2- coordination and bond strength |
|
|
| EELS measurement of copper (Cu) |
EDS measurement of copper (Cu) and its artifacts |
| Shell occupancies and binding energies of the electron shells in Cu |
Amorphous CuxZry alloys |
| Zrx–Nby–Cuz–Nim–Aln alloys |
X-Cu phase diagrams |
Al-Cu alloy |
Copper silicide |
| Cu2ZnSnSe4 |
La2CuSnO6 |
| Copper windings of wire in electromagnetic lenses |
Cu-CeO-YSZ |
| CuxZryTiz |
Cu-based metallic-glass alloys |
| Cu2O |
La2-xBaxCuO4 |
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| Failure modes of copper interconnect in ICs |
Electromigration (EM) diffusion of copper |
| Copper (Cu) interconnects with tantalum (Ta) barrier |
Copper (Cu) with dielectric diffusion barrier SiCxNy |
| Barriers for copper interconnections |
Cu/TiN/TiSi2/Si Contacts |
Copper damascene interconnects
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| Core electrons |
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| Comparison between valence band (outer) and core (inner) electrons |
Core electron energy modified by bond formation |
| Core-Loss |
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| Gaussian Focus for Core-Loss EFTEM Imaging |
Difference of focus depth for inelastic (core-loss EFTEM) and elastic imaging |
| Plasmon signal affected by core-loss transitions in EELS |
Intensity of EELS core-loss signal |
| Coulomb interaction between heavy charged particle and orbital electron |
Count rate in EDS measurements |
Cost of EM and related system and services |
Cost of lasers and lights |
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| Shape of ionization edge/core-loss edge in EELS |
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Correction |
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| 3D effect and relevant correction in EDS quantification |
Correction of zero-loss shift
in EELS |
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| Comparison between ionic, covalent, and metallic materials |
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| CPU |
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Creep |
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| Void formation by Nabarro–Herring creep |
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Criteria |
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| Performance criteria in HRTEM |
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Critical |
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| Accuracy of CD measurements using TEM |
Critical-dimension (CD) in integrated circuits (IC) |
| Critical sample thickness for EDS measurement |
Critical excitation energy |
| Line Width Roughness (LWR) and LER (Line Edge Roughness) in CD (Critical Dimension) Measurements |
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| Accuracy of CD (critical dimension) measurements using TEM |
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| Critical ionization energy versus characteristic X-ray energy |
Critical ionization energies of some elements |
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| Cross correlation function (XCF)/coefficient between two images |
Crossed lattice fringes to form HRTEM images |
Cross product |
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| Determination of Miller indices of planes |
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| Right-hand rule for cross products |
Zone axis determined by cross-product |
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| Cross section (probabilities) of scatterings: Introduction |
Cross sections (probabilities) of events: Introduction |
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| Cross section of high-angle scattering of electrons |
Binary-encounter-Bethe (BEB) method for cross section calculation |
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| Elastic cross section of a complex material |
Mott cross section |
| Rutherford cross-section |
Differential cross section of total (elastic & inelastic) electron scattering |
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| Damage cross section in EELS measurements |
Cross section of EELS K shell ionization |
| Bethe cross section |
Cross section for bremsstrahlung production |
| Cross section of plasmon scattering |
Cross section of secondary-electron generation |
| Ionization cross section |
Cross section of L-shell ionization |
| Cross section of K-shell ionization |
Displacement cross sections of atoms due to electron irradiation |
| Cross sections of electron inelastic interaction in DNA |
Damage cross section for electron irradiation |
| Accelerating voltage dependence of scattering cross-section for ionization |
Cross-section for inelastic scattering in EELS measurements |
Cross-over |
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| Cross-over formed by focusing electron beam |
Electron cross-over in TEM/STEM mode |
Cryo |
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| Cryo-focused ion beam-SEM (FIB-SEM) |
Cryogenic (adsorption) pumps & cold traps for vacuum |
| Cryogenic transmission electron microscopy (cryo-TEM) |
Cryo-preparations of TEM specimens |
| Cryostat (e.g. in EDS detectors) |
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| Crystalline materials |
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| Crystalline and semicrystalline orientation mapping with Four-dimensional (4D) STEM |
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| Crystalline phase analysis by EELS plasmon |
Crystalline phase analysis by EELS core-loss |
| Diffusion/diffusivity of elements through single crystals |
Difference of binding energies in amorphous and crystalline phases |
| Difference between bond lengths of amorphous and crystalline materials |
Crystal percentage in metallic glasses made from melts |
| Coordination number of atoms in crystals |
Notation for crystal structures |
| Crystals: Aperiodic crystals/incommensurate phases |
| Incommensurate modulated phases/structures |
Incommensurate composite crystals |
| Quasicrystals |
Misfit layer structures |
| Intergrowth compounds |
Vernier structures |
| Chimney-ladder structures |
Crystal field theory |
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| Crystal family |
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| Crystal growth in ICs studied by electron tomography |
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| Most common crystal structure of elements in periodic table |
Determination of crystal orientation |
| 32 point groups |
Determination of unknown crystal structures |
| Planes in lattice system of crystals |
Directions in lattice system of crystals |
| Fourier transform and FFT of HRTEM image of crystalline materials |
Ronchigrams of crystalline films in STEM |
| Anisotropy of physical and chemical properties of crystals |
Crystal orientation/diffraction effects on EXELFS of EELS signals |
| Crystal structure of compounds |
Space group/crystal structure depending on substitution concentration |
| Determination of crystal structures using electron diffraction technique |
Determination of crystal structures using HRTEM technique |
| Atomic arrangement in crystal structures |
Orientation relationship between two crystals |
Crystallization |
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| Crystallization of metallic glasses |
Crystallization kinetics of amorphous materials |
| Crystallization speed |
Dependence of crystallized fraction on annealing time and temperature |
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| Crystallographic structure refinement |
Crystallographic orbit |
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| TEM specimen preparation by crushing bulk crystals |
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| Stereographic projection for a cubic film with [001] normal |
Interfacial angles of cubic crystals |
| HRTEM imaging of cubic crystal structures |
Diffraction comparison between different cubic crystal structures |
| 23 point group |
m-3 point group |
| 432 point group |
-43m point group |
| m-3m point group |
Determination of point groups of cubic systems |
| A name = SpaceGroupCubic >Cubic space groups |
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| F-centered lattices/F-centering & their space groups |
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| F23 (196) |
Fm-3 (202) |
| Fd-3 (203) |
F432 (209) |
| F4132 (210) |
F4-3m (216) |
| F-43c (219) |
Fm-3m (225) |
| Fm-3c (226) |
Fd-3m (227) |
| Fd-3c (228) |
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| I (body-centered) lattices/I-centering & their space groups |
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| I23 (197) |
I213 (199) |
| Im-3 (204) |
Ia-3 (206) |
| I432 (211) |
I4132 (214) |
| I-43m (217) |
I-43d (220) |
| Im-3m (229) |
Ia-3d (230) |
| P (primitive) lattices & their space groups |
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| P23 (195) |
P213 (198) |
| Pm-3 (200) |
Pn-3 (201) |
| Pa-3 (205) |
P432 (207) |
| P4232 (208) |
P4332 (212) |
| P4132 (213) |
P-43m (215) |
| P-43n (218) |
Pm-3m (221) |
| Pn-3n (222) |
Pm-3n (223) |
| Pn-3m (224) |
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| Curie temperature/Curie point |
Curie-Weiss temperature |
Current in EMs & its measurement |
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| Stability of lens currents in EMs |
Dependence of electron probe/beam current on probe size in EMs |
| Probe current in EMs |
Current centering in TEM |
| Variation of electron beam current in EM columns |
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| Measurement of electron beam/probe current |
Measurement of electron probe current with EELS spectrometer |
| Practical beam current of FIB technique |
Practical beam current of STEM technique in TEM |
| Practical beam current of EDS technique in TEM |
Emission current in electron guns |
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| Low electron beam current density to minimize specimen damage in EELS measurements |
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| Current density scaling of interconnects in ICs |
Current: Electrons/holes mobility & current versus strain in materials |
| Curtaining effect in FIB-EM sample preparation |
Curved edge in EELS systems |
| Cyclic voltammetry (CV) |
Curve ROI and Loop ROI on Gatan DigitalMicrograph |
| Cylinder symmetry of some lenses |
Curved optics in EMs |
| Cs/C3 & C5 (spherical aberration) correctors |
Cylinders in EMs |
