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Conduction- & Valence-band Offsets
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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An important parameter for the design of electronic, heterojunction, quantum-well, and optoelectronic devices is the band offsets. Table 2072 lists the conduction- (ΔEc) and valence- (ΔEv) band offsets (eV) in some heterojunction and other systems.
Table 2072. Conduction- (ΔEc) and valence- (ΔEv) band offsets (eV) in some heterojunction and other systems.
Heterojunction systems |
ΔEc (eV) |
ΔEv (eV) |
GaAs/AlxGa1-xAs
|
|
0.46x |
GaAs/AlAs
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|
0.31 |
GaAs/InAs
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|
0.35 |
AlAs/Al0.37Ga0.63As
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|
0.34 |
Ga0.5In0.5P/GaAs |
|
0.32 |
AlN/InN |
|
1.32 ± 0.14 |
GaSb/InAs |
|
0.51 |
Al0.48In0.52As/Ga0.47In0.53As |
0.52 |
0.75 |
InN/GaN |
|
1.051 |
InN/AlN |
|
1.81 ± 0.2 |
In1-xGaxAsyP1-y/InP |
= 0.268•y + 0.003•y2 |
= 0.502·y - 0.152·y2 |
AlN/GaN |
|
0.57 ± 0.22 |
GaN/AlN |
|
0.7 ± 0.24 |
AlAs/InAs |
|
0.35 |
InP/Ga0.47In0.53As |
0.22 |
0.32 |
GaAs/AlSb |
|
0.40 |
GaSb/InAs0.95Sb0.05 |
|
0.67 |
CdTe/HgTe |
|
0.34 |
CdTe/ZnTe |
|
0.40 |
ZnTe/HgTe |
|
0.30 |
Si/Al2O3 |
2.8 |
4.9 |
Si/SiO2 |
3.3 |
4.4 |
Si/Ta2O5 |
0.3 |
3.0 |
Si/SrTiO3 |
<0.1 |
|
Si/ZrO2 |
1.7 |
3.3 |
Si/HfO2 |
1.6 |
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| Si/Si3N4
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2.4 |
1.8 |
Si/BaTiO3
|
-0.1 |
2.3 |
Si/BaZrO3 |
0.8 |
3.4 |
Si/Y2O3 |
2.3 |
2.6 |
Si/La2O3 |
2.3 |
2.6 |
Si/ZrSiO4
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1.5 |
3.4 |
Si/HfSiO4 |
1.5 |
3.4 |
LaAlO3 |
2.1 |
1.9 |
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The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.
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