Conduction- & Valence-band Offsets
- Practical Electron Microscopy and Database -
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An important parameter for the design of electronic, heterojunction, quantum-well, and optoelectronic devices is the band offsets. Table 2072 lists the conduction- (ΔEc) and valence- (ΔEv) band offsets (eV) in some heterojunction and other systems.

Table 2072. Conduction- (ΔEc) and valence- (ΔEv) band offsets (eV) in some heterojunction and other systems.

Heterojunction systems
ΔEc (eV)
ΔEv (eV)
GaAs/AlxGa1-xAs
0.46x
GaAs/AlAs
0.31
GaAs/InAs
0.35
AlAs/Al0.37Ga0.63As
0.34
Ga0.5In0.5P/GaAs
0.32
AlN/InN
1.32 ± 0.14
GaSb/InAs
0.51
Al0.48In0.52As/Ga0.47In0.53As
0.52
0.75
InN/GaN
1.051
InN/AlN
1.81 ± 0.2
In1-xGaxAsyP1-y/InP
= 0.268•y + 0.003•y2
= 0.502·y - 0.152·y2
AlN/GaN
0.57 ± 0.22
GaN/AlN
0.7 ± 0.24
AlAs/InAs
0.35
InP/Ga0.47In0.53As
0.22
0.32
GaAs/AlSb
0.40
GaSb/InAs0.95Sb0.05
0.67
CdTe/HgTe
0.34
CdTe/ZnTe
0.40
ZnTe/HgTe
0.30
Si/Al2O3
2.8
4.9
Si/SiO2
3.3
4.4
Si/Ta2O5
0.3
3.0
Si/SrTiO3
<0.1
Si/ZrO2
1.7
3.3
Si/HfO2
1.6
Si/Si3N4
2.4
1.8
Si/BaTiO3
-0.1
2.3
Si/BaZrO3
0.8
3.4
Si/Y2O3
2.3
2.6
Si/La2O3
2.3
2.6
Si/ZrSiO4
1.5
3.4
Si/HfSiO4
1.5
3.4
LaAlO3
2.1
1.9

 

 

 

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