Chemical Vapor Deposition (CVD)
- Practical Electron Microscopy and Database -
- An Online Book -


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Table 2387. Comparison of different CVD techniques applied in microfabrication processes.

APCVD
PECVD
LTLPCVD
MTLPCVD
ALCVD
UHVCVD
DLICVD
AACVD

Process temperature (°C)

300-500

100-350
300-500
500-900
Process pressure
Atmospheric pressure
Sub-atmospheric pressures
Very low pressure (<10−6 Pa)
Precursors
In liquid form
Transported to the substrate by means of a liquid/gas aerosol

Fabricated materials

SiO2, P-glass

SiN, SiO2, SiON
SiO2, P-glass, BP-glass
Poly-Si, SiO2, P-glass, BP-glass, Si3N4, SiON

Applications

Passivation, insulation, spacer

Passivation, insulation
Passivation, insulation, spacer
Passivation, gate metal, spacer
Successive layers with different substances

Throughput

High

Low
High
High
High growth rates

Step coverage

Poor

Poor
Poor
Conformal

Particles

Many

Many
Few
Few
Unwanted gas-phase reactions
Reduce unwanted gas-phase reactions
Film uniformity across wafer
Better
Film properties
Good
Poor
Good
Excellent

*Note: APCVD: atmospheric CVD; PECVD: plasma enhanced (assisted) CVD; LTLPCVD: low-temperature low-pressure CVD; MTLPCVD: medium temperature low pressure CVD; UHVCVD: ultrahigh vacuum CVD; AACVD: aerosol assisted CVD; DLICVD: direct liquid injection CVD; MPCVD: microwave plasma-assisted CVD; ALCVD: atomic-layer CVD.

 

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