Chemical vapor deposition (CVD)

Chemical Vapor Deposition (CVD)
- Practical Electron Microscopy and Database -
- An Online Book -

https://www.globalsino.com/EM/

This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.

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Table 2387. Comparison of different CVD techniques applied in microfabrication processes.

	APCVD	PECVD	LTLPCVD	MTLPCVD	ALCVD	UHVCVD	DLICVD	AACVD
Process temperature (°C)	300-500	100-350	300-500	500-900
Process pressure	Atmospheric pressure		Sub-atmospheric pressures			Very low pressure (<10⁻⁶ Pa)
Precursors							In liquid form	Transported to the substrate by means of a liquid/gas aerosol
Fabricated materials	SiO₂, P-glass	SiN, SiO₂, SiON	SiO₂, P-glass, BP-glass	Poly-Si, SiO₂, P-glass, BP-glass, Si₃N₄, SiON
Applications	Passivation, insulation, spacer	Passivation, insulation	Passivation, insulation, spacer	Passivation, gate metal, spacer	Successive layers with different substances
Throughput	High	Low	High	High			High growth rates
Step coverage	Poor	Poor	Poor	Conformal
Particles	Many	Many	Few	Few
Unwanted gas-phase reactions			Reduce unwanted gas-phase reactions
Film uniformity across wafer			Better
Film properties	Good	Poor	Good	Excellent

*Note: APCVD: atmospheric CVD; PECVD: plasma enhanced (assisted) CVD; LTLPCVD: low-temperature low-pressure CVD; MTLPCVD: medium temperature low pressure CVD; UHVCVD: ultrahigh vacuum CVD; AACVD: aerosol assisted CVD; DLICVD: direct liquid injection CVD; MPCVD: microwave plasma-assisted CVD; ALCVD: atomic-layer CVD.

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