Practical Electron Microscopy and Database

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

ESD (ElectroStatic Discharge) Failure of CMOS Technology

Failure mechanisms of silicides, which play a key role in ESD (electrostatic discharge) failure of CMOS technology, are [1]:          i) Silicide vertical penetration to the metallurgical junctions,          ii) Silicide lateral penetration to the metallurgical junctions,          iii) Silicide phase transformation,          iv) Silicide removal.               [1] Steven H. Voldman, ESD: Failure Mechanisms and Models, 2009.