| Researchers have investigated doping contrast generated by secondary electrons on semiconductor materials. They observed that p-doped regions of a p–n junction appear brighter than n-doped regions [1–21].
Figure 4824 illustrates that as the SEM voltage approaches 1.0 kV, image contrast in the n+/p well region diminishes. At higher voltages, however, the n-doped region and p well are distinctly delineated.
Figure 4824. Detailed SEM images comparing dopant contrast in the gate area at various e-beam voltages. Cross-sections were prepared using Ga-FIB at 30 kV and 7 nA. [22] |
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