The calculation of RDF is a well-known method for quantitative analysis of diffuse diffraction diagrams of amorphous samples. [1-2] For instance, the position of the first maximum of RDF represents the most probable distance between neighbouring atoms and decreases from 2.75 to 2.62 Å in films with an increasing Si-content from 60 to 75 at%.  [3]

[1] D.J.H. Cockayne, D.R. McKenzie, Acta Crystallogr. A 44 (1988) 870.
[2] D.J.H. Cockayne, D.R. McKenzie, D. Muller, Microsc. Microanal. Microstruct. 2 (1991) 359.
[3] D. Hofman, C. Kleint, J. Thomas, K. Wetzig, Investigation of thermoelectric silicide thin films by means of analytical transmission electron microscopy, Ultramicroscopy 81 (2000) 271-277.