Milling Rate of Materials in FIB
- Practical Electron Microscopy and Database -
- An Online Book -

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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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The milling rate of materials in FIB depends on many factors, including the ion flux, the probability of sputtering per incident ion, the re-deposition of the sputtered material, and the angle of incidence of the ions with the sample surface. Table 2455 lists some examples of milling rates of different materials in FIB.

Table 2455. Examples of milling rates of different materials in FIB. The incident angle is the angle of incidence with respect to target normal. This angle is schematically shown in Figure 2455.

Sputtered material
Milling rate
(µm3nA-1s-1 )
Atomic Weight
Name
Beam energy: 30 keV; Ion beam: Ga+; Incident angle: 0°
26.98
Al
0.37
28.085
Si
0.15
51.996
Cr
0.28
60.085
SiO2
0.19
140.255
Si3N4
0.21
196.97
Au
1.8

The user interfaces on the FIB systems normally have some configured files for sputtering of different materials. In these files, the beam dwell times and overlap have been calibrated for the specific materials in order to obtain the highest sputtering rates.

angle (θ) of incidence with respect to the target normal

Figure 2455. The angle (θ) of incidence with respect to the target normal.

 

 

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