Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| For FIB milling, the ionic sputtering yields of most materials strongly vary with the angle (θ) of incidence with respect to the target normal. This angle is schematically shown in Figure 2453a. Many materials such as Al, Cu, Zn, Si, and SiO2 have the highest sputtering yields at angles in the range of 75° to 85°. Figure 2453b shows the schematic illustration of relative sputtering yield against the angle of incidence with respect to target normal. For instance, the sputtering yields of Si and SiO2 are about 6 to 7 times larger than that at the zero angle.
Figure 2453a. The angle (θ) of incidence with respect to the target normal.
Figure 2453b. Schematic illustration of ionic sputtering yield against the angle (θ) of incidence with respect to target normal.
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