Practical Electron Microscopy and Database

An Online Book, Second Edition by Dr. Yougui Liao (2006)

Practical Electron Microscopy and Database - An Online Book

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

Defects in Crystals Formed by Ion-Implantation and Annealing

The most important extended defects in crystals formed by ion implantation followed by annealing are so-called {311} defects, stacking faults, and perfect dislocation loops. Table 1819 lists some examples of defects formed by ion implantation followed by annealing. During higher temperature annealing, the defects in crystals undergo a series of transitions from self-interstitial clusters to {113} defects to dislocation loops.

Table 1819. Examples of defects formed by ion implantation followed by annealing.

Substrate Implant

Defects

Resistivity (µΩcm)

 Implantation dose
[1015/cm2]		 Annealing (temperature/time) Reference
Si Si

{311} defects and low concentration dislocations

   0.2 700 °C/1 h [1]
Si Si Low concentration {311} defects
and dislocations		   0.2 700 °C//several h [1]
Si Si {311} defects and dislocations   1 700 °C [1]
Si Si Dislocations   1 800 °C [1]
Si Fe Poly-crystal 100-120 400 950 °C/30 min  
Si Nb Poly-crystal 60-100 300-400 900 °C/30 min  
Si Ta Poly-crystal 100 300 900 °C/30 min  
Si W Poly-crystal 40-60 500 900 °C/30 min  
Si Mo Poly-crystal 200-300 500 950 °C/30 min  

 

 

 

 

 

[1] K. S. Jones, J. Liu, L. Zhang, V. Krishnamoorthy, R. T. DeHoff, Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon, Nuclear Instruments and Methods in Physics Research B, 106 (1995) 227-232.

 

 

 

Contact the Book Author | About the Book Author | Join EM Group Chats

Citation of the Online Book Listed on Google Scholar