Silicon Dust Contamination in IC Devices
- Practical Electron Microscopy and Database -
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Table 2432. Silicon dust contamination in IC devices.

Contaminated area
Contaminant
Contamination sources
Effects
Bond-pad
Silicon dust
Introduced during die sawing, by passivation residue due to under etch [e.g. Figure 2432]
Induce non-sticking bond pad

Figure 2432 shows an example of C, O, and Si contaminated bond pads. Area S6 had an abnormal film on the native Al oxide, while area S5 presented nonhomogeneous, loose and empty SixAlyCzOm materials in the hemispherical defect.  These pad defects existed only at wafer edge because backside grinding was the root cause of the contamination.

Contaminated bond pads

Figure 2432. Contaminated bond pads. Adapted from [1]

 

 

 

 

[1] Paul Yu, Jamie Su, Qiang Gao, Ming Li, Chorng Niou, Study of Aluminum Pad Contamination Sources during Wafer Fabrication, Shipping, Storage and Assembly, International Symposium on High Density packaging and Microsystem Integration, 2007. HDP '07.

 

 

 

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