Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| Table 2430. Bond-pad contamination in IC devices induced during wafer packaging and shipping.
Figure 2430 shows an example of C, O, and Si contaminated bond pads. Area S6 had an abnormal film on the native Al oxide, while area S5 presented nonhomogeneous, loose and empty SixAlyCzOm materials in the hemispherical defect. These pad defects existed only at wafer edge because backside grinding was the root cause of the contamination.
Figure 2430. Contaminated bond pads. Adapted from [2]
[1] Y. N. Hua, S. Redkar, C. K. Lau, “A Study on Non-
Stick Aluminium Bondpads due to Fluorine
Contamination using SEM, EDX, TEM, IC, Auger, XPS
and TOF-SIMS Techniques,” Proceedings from the 28th
International Symposium for Testing and Failure
Analysis, Phoenix, Arizona, November, 2002, pp. 495-504.
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