Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Origin of Change of Plasmon Energy
| Table 1199. Origin of change of plasmon energy.
| Materials |
Energy change |
Mechanisms |
| SiNx with a smaller x |
Decrease |
Increase of the Si–Si bond concentration |
| SiOx with a smaller x |
Decrease |
Increase of the Si–Si bond concentration |
| Transition layer at Si3N4/SiO2 interface |
Decrease |
Presence of Si–Si bonds at the interface due to Si-rich SiOxNy |
| BeNx with a larger x |
Increase |
Due to higher density of electronic states in the valence band for the nitride phase in relation to the metallic one |
|
