Electron microscopy
 
Point Defects Created in FIB-EM Sample Preparation
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As shown in Figiure 1311, in FIB-EM sample preparation, point defects (e.g. vacancies and interstitials) are created underneath the amorphized layer. These point defects can:
         i) Modulate electronic structure of the material and affect TEM holography and SCM (scanning capacitance microscopy) signal;
         ii) Lead to formation of dislocation loops;
         iii) Affect diffraction contrast TEM.

Point Defects Created in FIB-EM Sample Preparation

Figiure 1311. Defects (point defects and amorphous layer) created in FIB-EM sample preparation.

 

 

 

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