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Node (in ICs)
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Table 2061 shows the summary of 2003 Roadmap, listing the node, gate length, equivalent oxide thickness of high power (CPU) and low standby power devices (mobile), gate oxide material, and gate electrode material.
Table 2061. Summary of 2003 Roadmap.
Year |
2001 |
2003 |
2005 |
2007 |
2009 |
2012 |
2016 |
2018 |
Node |
130 |
100 |
80 |
65 |
45 |
32 |
22 |
18 |
ASIC 1/2 pitch |
150 |
107 |
80 |
65 |
45 |
32 |
25 |
18 |
Physical gate
length |
65 |
45 |
32 |
25 |
20 |
13 |
9 |
7 |
Tox hi power |
1.5 |
1.3 |
1.1 |
0.9 |
0.8 |
0.6 |
0.5 |
0.5 |
Tox lo power |
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2.2 |
2.1 |
1.6 |
1.4 |
1.1 |
1.0 |
0.9 |
Gate oxide |
Oxynitride |
HfOx; Si,N |
LaAlO3 |
Gate metal |
Poly Si |
Metal gate, e.g. TaSiNx |
Figure 2061 shows the scaling of feature size, gate length and oxide thickness of complementary metal oxide semiconductor (CMOS) field effect transistor (FET) made
from silicon according to the 2003 International Technology Roadmap for Semiconductors.
Figure 2061. Scaling of feature size, gate length and oxide thickness of CMOS-FET according to the 2003 International Technology Roadmap for Semiconductors.
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The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. You can click How to Cite This Book to cite this book. If you let Yougui Liao know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.
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